Multifunctional steep-slope spintronic transistors with spin-gapless-semiconductor or spin-gapped-metal electrodes

Spin-gapless semiconductors (SGSs) are a promising class of materials for spintronic applications, enabling functions beyond conventional electronics. This study introduces a novel design for multifunctional spintronic field-effect transistors (FETs) using SGSs and/or spin-gapped metals (SGMs) as source and drain electrodes. These devices operate similarly to metal-semiconductor Schottky barrier FETs, where a potential barrier forms between the SGS (or SGM) electrode and the semiconducting channel. Unlike traditional Schottky barrier FETs, these devices utilize the unique spin-dependent transport properties of SGS/SGM electrodes to achieve sub-60 mV/dec switching, overcoming the 60 mV/dec sub-threshold swing limit in MOSFETs for low-voltage operation. Additionally, SGMs contribute a negative differential resistance (NDR) effect with an ultra-high peak-to-valley current ratio. The proposed spintronic FETs combine sub-60 mV/dec switching, non-local giant magnetoresistance (GMR), and NDR, making them suitable for applications like logic-in-memory computing and multivalued logic. These properties support computing architectures beyond the von-Neumann model, enabling efficient data processing. Two-dimensional (2D) nanomaterials provide a promising platform for these multifunctional FETs. We screen a computational 2D materials database to identify suitable SGS and SGM materials, selecting VS$2$ as the SGS for simulations. Using a non-equilibrium Green's function method with density functional theory, we simulate transfer ($I{\mathrm{D}}$-$V_{\mathrm{G}}$) and output ($I_{\mathrm{D}}$-$V_{\mathrm{D}}$) characteristics of a VS$_2$/Ga$_2$O$_2$ FET based on 2D type-II SGS VS$_2$, predicting a sub-threshold swing of 20 mV/dec, a high on/off ratio of 10$^8$, and a notable non-local GMR effect, demonstrating potential for low-power, high-performance applications.