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REVIEW 4 major objections 6 minor 35 references

Control of ferromagnetism of Vanadium Oxide thin films by oxidation states

T0 review · 4 major / 6 minor · reviewed 2026-08-12 · deepseek-v4-flash

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Pith's one-line read Amorphous, mixed-valence vanadium oxide films made by reactive sputtering are ferromagnetic at room temperature, with about 14 kA/m magnetization that decreases as oxygen content rises.

desk verdict A credible and honest report of possible room-temperature ferromagnetism in amorphous V2O3+p, held back from proof by the lack of element-specific magnetometry. read the letter →

arxiv 2411.16125 v1 pith:UWORUY66 submitted 2024-11-25 cond-mat.mtrl-sci

Kwonjin Park , Jaeyong Cho , Soobeom Lee , Jaehun Cho , Jae-Hyun Ha , Jinyong Jung , Dongryul Kim , Won-Chang Choi
show 2 more authors
Jung-Il Hong Chun-Yeol You
This is my paper · ORCID
classification cond-mat.mtrl-sci
keywords vanadiumoxidethinfilmsferromagnetismoxidationstatecontrolmixed-valenceV2O3reactivesputteringantiferromagneticexchangecouplingspintronics
verification ladder T0 review T1 audit T2 compute T3 formal

The pith

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The reading

This paper claims that amorphous, non-stoichiometric vanadium oxide thin films, written $V_2O_{3+p}$ with p = 0.05, 0.23, or 0.49, are intrinsically ferromagnetic at room temperature. The 20-nm films, made by reactive sputtering with different oxygen flows, show saturation magnetization about 14 kA/m and magnetic susceptibility around 10, far above the paramagnetic or antiferromagnetic response of crystalline V2O3 and VO2. The authors attribute the magnetism to a small volume fraction, roughly one to two percent, of ferromagnetic V4+-bearing regions embedded in an antiferromagnetic V3+ matrix, rather than to weak ferromagnetism or altermagnetism, which require ordered crystal structures. They support the intrinsic claim by showing that the VOx layer couples antiferromagnetically to an adjacent cobalt layer, producing an inverted hysteresis loop and a tunable phase shift in Hall measurements that strengthens as the magnetic moment grows. If correct, the result matters because it adds a room-temperature magnetic oxide whose properties can be tuned by oxidation state and, potentially, by voltage.

What carries the argument

The load-bearing object is the disordered mixed-valence film $V_2O_{3+p}$, produced by reactive sputtering, whose V3+:V4+ ratio is quantified by three EELS methods and whose microstructure is amorphous. The central mechanism proposed is a partial-volume ferromagnetic phase: isolated, low-density V4+ regions form ferromagnetic grains inside an antiferromagnetic V3+ matrix; the small ferromagnetic volume fraction explains the low net magnetization, while the surrounding antiferromagnetic matrix produces exchange pinning and slanted hysteresis loops. In bilayers, exchange coupling between the VOx ferromagnetic grains and the Co layer is what generates the inverted hysteresis loop at 300 K and the azimuthal phase shift in tilted Hall measurements; micromagnetic simulations that set only 2% of the VOx grains ferromagnetic reproduce both the 15 kA/m loop and the Co phase shifts.

What would settle it

Perform X-ray magnetic circular dichroism at the vanadium L2,3 edges on Sample 1 at 300 K: if the vanadium dichroic signal is absent or too small to account for the 14 kA/m saturation magnetization, the intrinsic-ferromagnetism claim is falsified. A complementary control, inserting a 1 nm nonmagnetic spacer between VOx and Co in the trilayer and checking whether the inverted hysteresis loop and Hall phase shift vanish together, would rule out interfacial CoO as the source of the antiferromagnetic coupling.

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Extended reading notes

Core claim

On the paper's own terms, the central discovery is that ferromagnetism in vanadium oxide is not limited to impurity- or defect-engineered nanotubes, twin boundaries, or nanowires; it is a property of simple 20-nm reactive-sputtered VOx films with mixed V3+/V4+ valence. The films have Curie temperatures above 300 K, a saturation magnetization of roughly 14 kA/m, and a susceptibility of order 10, and their magnetization falls monotonically as oxygen content increases. Electron energy loss spectroscopy assigns the films to $V_2O_{3+p}$ with p = 0.05, 0.23, and 0.49, i.e., predominantly V3+ with increasing V4+; transmission electron microscopy shows a mainly amorphous structure. The authors' partial-volume model says that only about 1-2% of the film is ferromagnetic, in V4+-rich regions, while the V3+ matrix remains antiferromagnetic, which reconciles the small net magnetization with atomic moments of order one Bohr magneton and with the strong exchange coupling seen in VOx/Co/Pt trilayers. They explicitly decline to call the effect weak ferromagnetism or altermagnetism, because both require well-defined crystalline symmetry, which these amorphous films lack.

Load-bearing premise

The identification of the measured magnetization as intrinsic to the oxide assumes that, after subtracting the substrate's paramagnetic background, all remaining signal comes from VOx rather than from trace magnetic impurities, and that the inverted loop in VOx/Co/Pt comes from VOx-Co coupling rather than interfacial CoO; if either assumption fails, the claim collapses.

Editorial extensions

If this is right

  • Room-temperature ferromagnetism in amorphous, non-stoichiometric VOx is achievable by reactive sputtering, so the material can be deposited onto arbitrary substrates without epitaxy.
  • Oxidation state, meaning the V3+:V4+ ratio, is a practical control knob: the saturation moment, susceptibility, and the strength of coupling to Co all decrease as p increases from 0.05 to 0.49.
  • VOx/Co/Pt stacks show antiferromagnetic interlayer coupling strong enough to reverse the Co spin configuration, so the VOx layer can act as a magnetic control layer in spintronic devices.
  • The measured 14 kA/m magnetization requires only 1-2% of the volume to be ferromagnetic, meaning local atomic moments are near one Bohr magneton, consistent with V4+ moments.
  • VOx introduces an in-plane anisotropy into the adjacent ferromagnet that shows up as a phase shift in Hall measurements, allowing the oxide to tailor the magnetic anisotropy of a neighboring layer.

Reading between the lines

Editorial extensions of the paper, not claims the author makes directly.

  • Editorial inference: Because the ferromagnetic fraction is small and sits in an antiferromagnetic matrix, the films may exhibit internal exchange bias and training effects similar to granular ferromagnet/antiferromagnet composites; measuring field-cooled loop shifts at low temperature would test this.
  • Editorial inference: If oxidation can be moved by ionic gating, VOx-based devices could offer voltage-controlled magnetic anisotropy, exchange coupling, or domain-wall motion without write currents; the authors mention gating only as a possible direction, not a demonstrated result.
  • Editorial inference: An element-specific X-ray magnetic circular dichroism measurement at the vanadium L-edges would be the decisive next experiment; a positive vanadium dichroic signal would convert the indirect coupling evidence into direct proof of vanadium-derived moments.
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Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, and a circularity audit.

Referee Report

4 major / 6 minor

Summary. This paper reports a study of reactive-sputtered 20-nm amorphous VOx films with nominal compositions V2O3+p (p = 0.05, 0.23, 0.49) and claims room-temperature ferromagnetism with saturation magnetization ≈14 kA/m, based on SQUID magnetometry, TEM-EELS determination of V3+/V4+ ratios, transport Hall measurements in VOx/Co/Pt trilayers, and micromagnetic simulations. The authors attribute the ferromagnetism to a partial volume fraction of ferromagnetic phases embedded in an antiferromagnetic matrix, and they interpret an inverted hysteresis loop and azimuthal Hall phase shifts as evidence of antiferromagnetic exchange coupling between VOx and Co layers.

Significance. If the claim is correct, this would be a notable result: amorphous mixed-valent V2O3+p films would host a room-temperature ferromagnetic phase with a moment an order of magnitude below conventional ferromagnets, tunable by oxidation state, and capable of coupling to a Co overlayer—potentially relevant for spintronic applications. The paper's strengths include a systematic control of oxygen flow, a three-method EELS analysis of the V3+/V4+ ratio, structural characterization by HR-TEM/FFT, and a reasonable micromagnetic modeling framework that reproduces the qualitative features of the data. However, the evidence currently falls short of the claim of 'clear evidence' because the magnetization is not element-specific, the coupling signature lacks a critical control, and the simulations are fitted rather than predictive.

major comments (4)
  1. [Sec. 1, Fig. 1, Table I] The claim of intrinsic room-temperature ferromagnetism with Ms ≈ 14 kA/m rests exclusively on macroscopic SQUID magnetometry after subtraction of a large paramagnetic substrate background; no error bars, no repeated-sample statistics, and no element-specific magnetic probe (XMCD or neutron scattering) are provided. The measured saturation moment is only 1–2% of a typical ferromagnet, precisely the magnitude expected for ppm-level FM impurities, and the paper itself acknowledges in Sec. 1 that 'more direct evidence, such as detailed measurements of the atomic moments and spin configurations within the VOx layer, would be necessary.' This missing element-specific evidence is load-bearing: without it, the central claim of intrinsic VOx ferromagnetism is not established.
  2. [Sec. 1, Fig. 4] The inverted hysteresis loop in VOx/Co/Pt at 300 K (Fig. 4c) is attributed to antiferromagnetic exchange coupling between VOx and Co, but no control sample without VOx (e.g., Co/Pt on the same substrate) or with a nonmagnetic oxide interlayer (e.g., AlOx/Co/Pt) is presented. Interfacial CoO formation during VOx deposition or after air exposure can produce exchange bias or inverted hysteresis without any magnetic moment in VOx. Because the coupling signature is the authors' second pillar of evidence for VOx ferromagnetism, the absence of this control is a load-bearing gap.
  3. [Sec. 3 (Experimental), Fig. 6] The micromagnetic simulations are parameterized to reproduce the observations: only 2% of VOx grains are assigned ferromagnetic order with Ms = 1.0×10^6 A/m (yielding ~15 kA/m net magnetization), and the coupling energy is adjusted to fit the AHE phase shift. The authors state that the parameters 'may not represent the actual material properties of VOx' and were 'varied over a wide range to ensure the simulations could reproduce the experimental observations.' As presented, the simulation is a fitted restatement of the partial-volume assumption rather than an independent test, and therefore it does not close the evidential gap for intrinsic ferromagnetism.
  4. [Sec. 1, Fig. 1] The reported susceptibility χ ~ 10 is not adequately defined. If χ = ∂M/∂H with M in kA/m and H in T, the value is not dimensionless and cannot be compared with |χ| < 10^-5 for paramagnetic phases; if a dimensionless susceptibility is intended, the conversion and the field range over which the slope is extracted should be specified. The manuscript does not show the raw subtraction procedure or the uncertainty on χ, which is essential because the ferromagnetic signal is comparable to the substrate background that must be removed.
minor comments (6)
  1. [Fig. 5b and main text] In several places the manuscript uses nonstandard or inconsistent notation: Sample 1A/2A/3A are introduced as trilayers, but Figure 5b is described in the text with colors 'red, blue, and olive' while the caption says 'red, blue, and green'; please harmonize.
  2. [Eq. (1) and Note S1] Eq. (1) is written for the untilted geometry, while the actual measurement uses a tilted geometry; the reader must consult Note S1 to understand the sin φ_H dependence. Please state in the main text that Eq. (1) is generalized to tilted geometry as Eq. (S1).
  3. [Conclusions] The Conclusions speculate about 'gating with bias voltage' and voltage-controlled phenomena, but no gating experiment is reported in the manuscript; this should be clearly labeled as a future outlook or removed.
  4. [Throughout] Typos and minor grammatical errors appear throughout, e.g., 'In ordered to confirm' (Sec. 1, paragraph on exchange coupling) and 'AHH' (Fig. 5b caption).
  5. [References] Reference [28] is a GitHub URL without a full citation; please provide an archival reference for MuView.
  6. [Table I] The notation V2O3+p in Table I should be defined explicitly: p is the fraction of V4+ per V site, not a conventional oxygen off-stoichiometry parameter, to avoid confusion.

Circularity Check

2 steps flagged · score 6.0 of 10

Simulation-based 'confirmation' of the partial-volume ferromagnetic model is a fitted restatement of the input magnetization; the underlying experimental hysteresis and exchange-coupling data are independent.

  1. fitted input called prediction [Partial-volume ferromagnetic-phase model paragraph (Results) and Fig. 6a; 'Micromagnetic Simulations' in Experimental section]
    "We set ferromagnetic exchange coupling for only 2% of grains (4 grains)... We adjusted the material parameters of VOx to replicate the experimentally observed hysteresis loop (refer to Fig. 1a). It is important to note that the simulated magnetization is 15 kA/m, which represents only 1.5% of the input value for VOx (Ms = 1.0 × 10^6 A/m)... Therefore, the result of 15 kA/m is not unexpected, given that only 2% of the volume is attributed to the ferromagnetic phase."

    The volume fraction (2%) and saturation magnetization (Ms = 1.0 × 10^6 A/m) are chosen so that the simulation reproduces the measured low magnetization. The output (15 kA/m ≈ 1.5% of the input Ms) is therefore the product of the fitted fraction and the assumed Ms by construction. The simulation is then presented as confirming the partial-volume model and 'implying that the actual volume fraction ... is likely order of 1%,' but that quantity was the adjustable input. This is a fitted parameter renamed as a simulated prediction, not an independent validation.

  2. fitted input called prediction [Fig. 6c and 'Micromagnetic Simulations' paragraph, Results section]
    "It is important to note that we varied the field strength while maintaining a fixed coupling energy between Co and VOx layers (as depicted in Fig. 6c), which is physically equivalent to applying a fixed field with varying coupling strength (as shown in Fig. 5b II-IV)... Experimentally observed phase shift (Fig. 5b) are successfully reproduced under small in-plane fields."

    The phase shift in Rxy(phi_H) is reproduced by sweeping either field or Co-VOx coupling strength until the experimental curves match. Because the coupling constant is tuned rather than independently determined or predicted, the simulation cannot provide additional confirmation of the exchange coupling; it only demonstrates that some coupling strength can reproduce the data. The experimental phase shift itself remains valid evidence, but the simulation adds no independent constraint.

full rationale

The paper contains no load-bearing self-citations and does not import a uniqueness theorem from the authors' prior work. The primary experimental evidence for ferromagnetism (hysteresis loops with chi ~ 10, the inverted VOx/Co/Pt loop, and the azimuthal AHE phase shifts) is independent, externally measured data and is not itself circular. The circularity is confined to the model-validation step: the partial-volume ferromagnetic phase model is inferred from the very low measured magnetization, and the MuMax3 simulation then sets the ferromagnetic volume fraction to 2% with Ms = 1.0 × 10^6 A/m to reproduce that same magnetization. The simulated 15 kA/m is just 1.5% of the input Ms, so the agreement is by construction rather than a parameter-free prediction. Likewise, the simulated AHE phase shift is obtained by varying coupling strength until it matches the experiment, which is curve fitting rather than confirmation. These fitted simulations are presented as 'confirmation' of the proposed model, so the validation chain is partially circular, though the underlying experiments and the central claim of an intrinsic ferromagnetic phase do not reduce to the simulations. Concerns about trace magnetic impurities or interfacial CoO are correctness risks, not circularity, and are not scored here.

Assumptions & free parameters 7 free parameters · 6 assumptions · 0 invented entities

The central experimental claim itself is free of fitted parameters; fitted parameters enter through the micromagnetic model that is presented as confirmation. That model requires assuming a ferromagnetic V4+ moment, a 2% FM volume fraction, and several magnetic constants that were varied to match data. The EELS oxidation-state calibration also relies on linear fits from two crystalline standards.

free parameters (7)
  • VOx saturation magnetization Ms,VO_x = 1.0 x 10^6 A/m
    Assumed equal to a typical ferromagnet in the MuMax3 simulations (Sec. 4) to reflect a reported ~1 mu_B V4+ moment; not measured for these films.
  • Ferromagnetic volume fraction f_FM = 2% (4 of 200 grains)
    Chosen so that the simulated hysteresis loop matches the observed 15 kA/m (Fig. 6, Sec. 1). The text also speculates about 10% earlier, showing the value is tuned rather than measured.
  • VOx exchange stiffness A_ex = 2.0 x 10^-11 J/m
    Set to a typical ferromagnetic value for the simulation. The authors state parameters were varied over a wide range to reproduce experiments.
  • VOx anisotropy K_VOx = 0.05 x 10^6 J/m^3
    Adjusted so the simulated loop shape matches experiment; not independently measured.
  • VOx DMI constant D_VOx = 0.001 mJ/m^2
    Ad hoc value used in the simulation. The authors note the chosen parameters may not represent actual material properties.
  • Inter-grain exchange coupling energies = random values (not specified)
    Random inter-grain exchange coupling energy is used for the 200 grains; the distribution and magnitudes are not reported, so the simulation cannot be independently reproduced.
  • VOx/Co interface exchange coupling energy = not specified
    Used to reproduce the AHE phase shift in Fig. 6c; the paper varies field strength while keeping coupling fixed but does not report the coupling energy value.
assumptions (6)
  • standard math Micromagnetic LLG formalism in MuMax3 correctly models the VOx/Co system
    Used for the simulations in Sec. 4; standard tool, but assumes continuum micromagnetism with a 1 nm cell size.
  • domain assumption V4+ ions carry about 1 mu_B moments and can couple ferromagnetically when isolated in an amorphous V2O3+p matrix
    Invoked to explain low magnetization with high atomic moment in Sec. 1; supported only by Ref. 6, not measured here.
  • domain assumption The Neel temperature of the amorphous VOx matrix is below 200 K, so any 300 K magnetic signal must come from a ferromagnetic phase rather than antiferromagnetic order
    Stated in Sec. 1 ('Neel temperature of VOx phases is nominally far below 200 K'); extrapolated from crystalline phases to amorphous films.
  • domain assumption EELS linear calibrations from single-crystal V2O3/VO2 apply to amorphous V2O3+p films
    Used in Methods 2 and 3 (SI, Fig. S2) to convert L3/L2 ratios and peak shifts to oxidation state; calibration from crystalline standards.
  • domain assumption No magnetic impurity phases contribute to the measured moment
    Assumed throughout; no element-specific magnetometry (XMCD) or compositional analysis for trace magnetic impurities is provided.
  • ad hoc to paper A partial volume fraction model with ferromagnetic grains embedded in an antiferromagnetic matrix describes the films
    Introduced post hoc to reconcile low net magnetization with ~mu_B atomic moments (Sec. 1, Fig. 6).

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Cite this review

Pith. "Pith review of Control of ferromagnetism of Vanadium Oxide thin films by oxidation states." pith.science (2026). https://pith.science/paper/UWORUY66

@misc{pith2026241116125,
  author       = {Pith},
  title        = {Pith review of: Control of ferromagnetism of Vanadium Oxide thin films by oxidation states},
  year         = {2026},
  howpublished = {\url{https://pith.science/paper/UWORUY66}},
  note         = {Machine review of arXiv:2411.16125}
}
read the original abstract

Vanadium oxide (VOx) is a material of significant interest due to its metal-insulator transition (MIT) properties as well as its diverse stable antiferromagnetism depending on the valence states of V and O with distinct MIT transitions and N\'eel temperatures. Although several studies reported the ferromagnetism in the VOx, it was mostly associated with impurities or defects, and pure VOx has rarely been reported as ferromagnetic. Our research presents clear evidence of ferromagnetism in the VOx thin films, exhibiting a saturation magnetization of approximately 14 kA/m at 300 K. We fabricated 20-nm thick VOx thin films via reactive sputtering from a metallic vanadium target in various oxygen atmosphere. The oxidation states of ferromagnetic VOx films show an ill-defined stoichiometry of V2O3+p, where p = 0.05, 0.23, 0.49, with predominantly disordered microstructures. Ferromagnetic nature of these VOx films is confirmed through a strong antiferromagnetic exchange coupling with the neighboring ferromagnetic layer in the VOx/Co bilayers, in which the spin configurations of Co layer is influenced strongly due to the additional anisotropy introduced by VOx layer. The present study highlights the potential of VOx as an emerging functional magnetic material with tunability by oxidation states for modern spintronic applications.

Figures

Figures reproduced from arXiv: 2411.16125 by the authors.

Figure 6
Figure 6. The results of micromagnetic simulations for VOx single layer (a,c) and VOx/Co bilayer (b,d). (a) The hysteresis loop of the x-component magnetization as a function of the external in-plane magnetic fields. The saturation magnetization of 15 kA/m is similar to the experimental results (Fig. 1a), contrary to the input value of 𝑀𝑠( = 1.0 × 106 A/m) for VOx. (b) Illustrations of the spin configurations at Hx = 0.4 T. T… view at source ↗

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Works this paper leans on

35 extracted references · 34 canonical work pages

  1. [1]

    weak ferromagnetism

    Results and discussion Figure 1 illustrates the magnetization hysteresis curves (a, b) and the susceptibility (𝜒 = 𝜕𝑀 𝜕𝐻⁄ ) (c, d) of various VO x films with a thickness of 20 nm at temperatures of 10 K and 300 K, respectively. Samples 1, 2, and 3 were fabricated using different oxygen flow rates of 2.5, 3.5, and 4.5 sccm during the magnetron sputtering p...

    work page

  2. [2]

    Notably, the oxidation of VOx was tailored to produce different proportions of V 3+ and V4+

    Conclusions In conclusion, this study identifies the specific changes in magnetic properties that occur at various oxidation states in VO x thin films, as well as the interactions that arise with the FM layer. Notably, the oxidation of VOx was tailored to produce different proportions of V 3+ and V4+. This modulation of VO x composition allows for the adj...

    work page

  3. [3]

    The process began with the deposition of a 20 nm thick VO x layer, achieved through reactive sputtering with a metallic vanadium target

    Experimental section Sample preparation: In this study, VOx, Co, and Pt layers were sequentially deposited on a thermally oxidized silicon wafer using a magnetron sputtering system. The process began with the deposition of a 20 nm thick VO x layer, achieved through reactive sputtering with a metallic vanadium target. During this deposition, the chamber's ...

    work page

  4. [4]

    The magnetic moment as a function of temperature was recorded starting from a saturated state at 10 K under a magnetic field of 1 T

    Magnetization Measurements: The magnetic properties were assessed using a Magnetic Properties Measurement System (MPMS) equipped with a superconducting magnet capable of reaching up to 5 T. The magnetic moment as a function of temperature was recorded starting from a saturated state at 10 K under a magnetic field of 1 T. The measurements were then continu...

    work page

  5. [5]

    F. J. Morin, Phys. Rev. Lett. 1959, 3, 34

    work page 1959

  6. [6]

    C. Wu, F. Feng, Y. Xie, Chem. Soc. Rev. 2013, 42, 5157

    work page 2013

  7. [7]

    Blümer, E

    N. Blümer, E. Kalinowski, Phys. Rev. B 2005, 71, 195102

    work page 2005

  8. [8]

    Krusin-Elbaum, D

    L. Krusin-Elbaum, D. M. Newns, H. Zeng, V. Derycke, J. Z. Sun, R. Sandstrom, Nature 2004, 431, 672

    work page 2004

Show all 35 references
  1. [9]

    T.-H. Yang, S. Nori, H. Zhou, J. Narayan, Appl. Phys. Lett. 2009, 95, 1

    2009

  2. [10]

    Z. Li, Y. Guo, Z. Hu, J. Su, J. Zhao, J. Wu, J. Wu, Y. Zhao, C. Wu, Y. Xie, Angew. Chemie Int. Ed. 2016, 55, 8018

    2016

  3. [11]

    Z. R. Xiao, G. Y. Guo, J. Chem. Phys. 2009, 130, 214704

    2009

  4. [12]

    Vavilova, I

    E. Vavilova, I. Hellmann, V. Kataev, C. Täschner, B. Büchner, R. Klingeler, Phys. Rev. B 2006, 73, 144417

    2006

  5. [13]

    Ren Xiao, G

    Z. Ren Xiao, G. Yu Guo, P. Han Lee, H. Shu Hsu, J. Chun Andrew Huang, J. Phys. Soc. Japan 2008, 77, 23706

    2008

  6. [14]

    A. B. Cezar, I. L. Graff, J. Varalda, W. H. Schreiner, D. H. Mosca, J. Appl. Phys. 2014, 116, 163904

    2014

  7. [15]

    A. Z. Moshfegh, A. Ignatiev, Thin Solid Films 1991, 198, 251

    1991

  8. [16]

    H. Lu, S. Clark, Y. Guo, J. Robertson, Phys. Chem. Chem. Phys. 2020, 22, 13474

    2020

  9. [17]

    H. Lu, S. Clark, Y. Guo, J. Robertson, J. Appl. Phys. 2021, 129, 240902

    2021

  10. [18]

    S. Y. Ezhov, V. I. Anisimov, D. I. Khomskii, G. A. Sawatzky, Phys. Rev. Lett. 1999, 83, 4136. 34

    1999

  11. [19]

    Dzyaloshinsky, J

    I. Dzyaloshinsky, J. Phys. Chem. Solids 1958, 4, 241

    1958

  12. [20]

    Cuono, R

    G. Cuono, R. M. Sattigeri, J. Skolimowski, C. Autieri, J. Magn. Magn. Mater. 2023, 586, 171163

    2023

  13. [21]

    Krempaský, L

    J. Krempaský, L. Šmejkal, S. W. D’Souza, M. Hajlaoui, G. Springholz, K. Uhlířová, F. Alarab, P. C. Constantinou, V. Strocov, D. Usanov, W. R. Pudelko, R. González - Hernández, A. Birk Hellenes, Z. Jansa, H. Reichlová, Z. Šobáň, R. D. Gonzalez Betancourt, P. Wadley, J. Sinova, ...

    2024

  14. [22]

    Y.-P. Zhu, X. Chen, X.-R. Liu, Y. Liu, P. Liu, H. Zha, G. Qu, C. Hong, J. Li, Z. Jiang, X.-M. Ma, Y.-J. Hao, M.-Y. Zhu, W. Liu, M. Zeng, S. Jayaram, M. Lenger, J. Ding, S. Mo, K. Tanaka, M. Arita, Z. Liu, M. Ye, D. Shen, J. Wrachtrup, Y. Huang, R.-H. He, S. Qiao, Q. Liu, C. Li...

    2024

  15. [24]

    B. Lu, L. Guo, F. Wu, Y. Peng, J. E. Lu, T. J. Smart, N. Wang, Y. Z. Finfrock, D. Morris, P. Zhang, N. Li, P. Gao, Y. Ping, S. Chen, Nat. Commun. 2019, 10, 631

    2019

  16. [25]

    R. Pal, L. Bourgeois, M. Weyland, A. K. Sikder, K. Saito, A. M. Funston, J. R. Bellare, ACS Omega 2021, 6, 23934

    2021

  17. [26]

    Saghayezhian, S

    M. Saghayezhian, S. Kouser, Z. Wang, H. Guo, R. Jin, J. Zhang, Y. Zhu, S. T. Pantelides, E. W. Plummer, Proc. Natl. Acad. Sci. 2019, 116, 10309

    2019

  18. [27]

    Maity, D

    T. Maity, D. Kepaptsoglou, M. Schmidt, Q. Ramasse, S. Roy, Phys. Rev. B 2017, 95, 35 100401

    2017

  19. [28]

    Q. Liu, F. Fei, B. Chen, X. Bo, B. Wei, S. Zhang, M. Zhang, F. Xie, M. Naveed, X. Wan, F. Song, B. Wang, Phys. Rev. B 2019, 99, 155119

    2019

  20. [29]

    Ö ztürk, J

    M. Ö ztürk, J. Supercond. Nov. Magn. 2020, 33, 3097

    2020

  21. [31]

    Vansteenkiste, J

    A. Vansteenkiste, J. Leliaert, M. Dvornik, M. Helsen, F. Garcia -Sanchez, B. Van Waeyenberge, AIP Adv. 2014, 4

    2014

  22. [32]

    https://github.com/grahamrow Supporting information Control of ferromagnetism of Vanadium Oxide thin films by oxidation states Kwonjin Park, 1 Jaeyong Cho, 1 Soobeom Lee, 2 Jaehun Cho, 3 Jae-Hyun Ha, 1 Jinyong Jung, 1 Dongryul Kim,1 Won-Chang Choi,1 Jung-Il Hong,1 and Chun-Yeo...

  23. [33]

    Consequently, it is expected to have mixed EELS spectra composed of V3+ and V4+

    Area Ratio Calculation (Method1): For deep analysis of EELS data, we focus EELS spectra on the narrower energy loss range of 512 -529 eV i n Figure 2 for Sample 1, 2, 3. Consequently, it is expected to have mixed EELS spectra composed of V3+ and V4+. To clearly distinguish the...

  24. [34]

    It has been reported that the ratio decreases linearly as oxidation increases in single crystal VO x[1]

    I(L3)/I(L2) Edge Intensity Ratio (Method2): We analyzed the intensity ratio changes between the L 3 and L2 edges of Sample 1, 2, 3. It has been reported that the ratio decreases linearly as oxidation increases in single crystal VO x[1]. The data points for VO x utilized with t...

  25. [35]

    Energy Loss peak of the L3 Edge (Method3): According to the S. Kalavathi[1], the energy loss peak of L3 edge also reflect the oxidation state, so another linear relation of the energy loss peak of L3 edge is given: 𝐸(𝐿3) = 𝑞1 ∗ 𝑉𝑜𝑥 + 𝑞2, and 𝑞1 and 𝑞2 are determined from the p...

  26. [36]

    Kalavathi, S

    S. Kalavathi, S. Amirthapandian, S. Chandra, P. C. Sahu, H. K. Sahu, J. Phys. Condens. Matter 2014, 26, 15601

    2014

  27. [37]

    Hayashi, J

    M. Hayashi, J. Kim, M. Yamanouchi, H. Ohno, Phys. Rev. B 2014, 89, 144425

    2014

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Reviewed August 12, 2026 · model on record in the stance chip above.