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Electrical switching of Chern insulators in moire rhombohedral heptalayer graphene

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arxiv 2503.00837 v2 pith:CJK6LWKY submitted 2025-03-02 cond-mat.mes-hall

Electrical switching of Chern insulators in moire rhombohedral heptalayer graphene

classification cond-mat.mes-hall
keywords cherngrapheneinsulatorsmagneticmoirerhombohedralorbitalquantum
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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In orbital Chern insulators, the chemical potential acts as a tuning knob to reverse chirality in dissipationless edge currents, enabling electric-field control of magnetic order-key for future quantum electronics. Despite the rise of orbital Chern insulators, electrically switchable quantum anomalous Hall effect (QAHE) remains rare, necessitating further investigation. Here, we demonstrate electric-field-induced reversal of orbital Chern insulators in a moire superlattice composed of rhombohedral heptalayer graphene (r-7LG) aligned with hexagonal boron nitride. At one electron per moire unit cell, two emerging Chern insulating phases - one pointing away from and the other toward graphene's charge neutrality point in the phase diagram of carrier density (n) versus magnetic field (B) - exhibit energetic competition modulated by both n and B. This switchable QAHE chirality in r-7LG demonstrates a layer-number dependent response: similar phenomena in moire r-6LG require much higher magnetic fields and are absent in thinner rhombohedral graphene. Our findings establish moire-engineered rhombohedral graphene as a promising platform for exploring topological quantum materials with electrically controllable chiral edge modes and magnetic order.

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Cited by 4 Pith papers

Reviewed papers in the Pith corpus that reference this work. Sorted by Pith novelty score.

  1. Engineering electrically-switchable quantum anomalous Hall states by spin-orbit coupling

    cond-mat.mes-hall 2026-06 unverdicted novelty 7.0

    Proximity to WSe2 engineers the magnetic energy landscape in tMBG via induced SOC, enabling nonvolatile gate switching of QAH states and gate tuning between |C|=2, |C|=1, and metallic regimes without magnetic reset.

  2. Tunable high-Chern-number Chern insulators in rhombohedral tetralayer graphene/hBN moir\'e superlattices

    cond-mat.mes-hall 2026-04 unverdicted novelty 7.0

    New symmetry-broken Chern insulators with C = +3, ±2, ±1 at v = -2.5 or -2.6, plus the known C = -4 at v = -1, were observed in rhombohedral tetralayer graphene/hBN moiré superlattices and shown to be tunable via twis...

  3. Lattice Relaxation Flattens Chern Bands in Rhombohedral Graphene Stacks

    cond-mat.str-el 2026-05 unverdicted novelty 6.0

    Lattice relaxation strain fields flatten and isolate a |C|=1 Chern band in rhombohedral graphene-hBN heterostructures under Hartree-Fock interactions.

  4. Family of High-Chern-Number Orbital Magnets in Twisted Rhombohedral Graphene

    cond-mat.mes-hall 2026-01 unverdicted novelty 6.0

    Experimental discovery of a family of high-Chern-number orbital magnets in twisted (1+n) rhombohedral graphene with observed topological hierarchy C = n for n=3,4,5.