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A foundry-fabricated spin qubit unit cell with in-situ dispersive readout

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arxiv 2504.20572 v1 pith:VNP6JQX5 submitted 2025-04-29 cond-mat.mes-hall

A foundry-fabricated spin qubit unit cell with in-situ dispersive readout

Pierre Hamonic , Mathieu Toubeix , Guillermo Haas , Jayshankar Nath , Matthieu C. Dartiailh , Biel Martinez , Benoit Bertrand , Heimanu Niebojewski
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Maud Vinet Christopher B\"auerle Franck Balestro Tristan Meunier Matias Urdampilleta
This is my paper
classification cond-mat.mes-hall
keywords cellquantumqubitreadoutunitsingle-shotcomputinggate
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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Spin qubits based on semiconductor quantum dots are a promising prospect for quantum computation because of their high coherence times and gate fidelities. However, scaling up those structures to the numbers required by fault-tolerant quantum computing is currently hampered by a number of issues. One of the main issues is the need for single-shot low-footprint qubit readout. Here, we demonstrate the single-shot in situ measurement of a compact qubit unit-cell. The unit cell is composed of two electron spins with a controllable exchange interaction. We report initialization, single-shot readout and two-electron entangling gate. The unit cell was successfully operated at up to 1 K, with state-of-the-art charge noise levels extracted using free induction decay. With its integrated readout and high stability, this foundry fabricated qubit unit cell demonstrates strong potential for scalable quantum computing architectures.

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Cited by 3 Pith papers

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    cond-mat.mes-hall 2026-04 unverdicted novelty 6.0

    Multiplexed cryo-CMOS control enables stable biasing and fast pulsing of an isolated silicon double quantum dot at 0.5 K, supporting deterministic multi-electron loading and resolution of tunneling events across charg...

  3. Multi-Qubit Entanglement of Unit Cell Pairs in SiMOS

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    Experimental demonstration of universal controllability, parallel readout, and certified three-qubit GHZ entanglement with extended lifetime in a two-unit-cell SiMOS quantum processor.