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REVIEW 2 major objections 4 minor 66 references

Emergence of Diverse Topological States in Ge Doped MnBi2Te4

T0 review · 2 major / 4 minor · reviewed 2026-08-07 · deepseek-v4-flash

Pith's one-line read Substituting Ge for Mn in MnBi2Te4 produces six successive topological states, from magnetic topological insulator through two classes of magnetic Dirac semimetal to strong topological insulator.

desk verdict A careful, well-evidenced DFT phase diagram for Ge-doped MnBi2Te4, with a real but non-fatal caveat: the phase boundaries rely on one ordered supercell per doping level. read the letter →

arxiv 2505.22348 v1 pith:UO4ZFOWE submitted 2025-05-28 cond-mat.mtrl-sci cond-mat.otherphysics.comp-phquant-ph

classification cond-mat.mtrl-scicond-mat.otherphysics.comp-phquant-ph
keywords topologicalphasetransitionsmagneticDiracsemimetalWeylMnBi2Te4Gedopingbandinversionantiferromagneticinsulatorfirst-principlescalculations
verification ladder T0 review T1 audit T2 compute T3 formal

The pith

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The reading

Ge doping in MnBi2Te4 is not a monotonic tuning of one topological gap; the paper argues that as Mn is replaced by Ge, two band inversions with different momentum origins compete, and this competition produces six successive topological ground states between the two parent compounds. For the antiferromagnetic phase the sequence runs from magnetic topological insulator to a class-I magnetic Dirac semimetal, a normal insulator, a class-II magnetic Dirac semimetal, back to a magnetic topological insulator, and finally to a strong topological insulator. The ferromagnetic state, only slightly higher in energy, shows an analogous progression through two classes of Weyl semimetal, a normal insulator, a time-reversal-breaking topological insulator, and a strong topological insulator. The practical stake is that a single chemically tunable crystal could host controllable transitions among magnetic topological, Dirac, Weyl, and strain-tunable higher-order phases, with the strain-induced Weyl phase showing unusually long Fermi arcs.

What carries the argument

The load-bearing object is the band momentum mapping (BMM) method, which assigns each band at the $\Gamma$ point of the folded antiferromagnetic Brillouin zone to its momentum origin, either $\Gamma_0$ or $Z_0$, in the nonmagnetic/ferromagnetic single-layer cell. The assignment is made from parity eigenvalues and Bi/Te orbital character, exploiting the fact that the two-layer antiferromagnetic cell folds $Z_0$ onto $\Gamma$. With this mapping the whole phase diagram becomes a competition between two band inversions, the MnBi2Te4-type inversion at $\Gamma_0$ and the GeBi2Te4-type inversion at $Z_0$, and the sequence of topological states is read off from which gap closes and reopens as Ge fraction increases.

What would settle it

Angle-resolved photoemission on a well-characterized MGBT sample near x=0.44 should see the predicted fourfold Dirac point at the zone center with the expected parity inversion; if instead a full bulk gap appears there, or if a supercell-averaged calculation moves the x=0.44, 0.67, and 0.78 transitions enough to change the order of the phases, the central phase diagram would be falsified.

Watch

Extended reading notes

Core claim

The paper's central claim is that antiferromagnetic Mn(1-x)GexBi2Te4 realizes, as x increases from 0 to 1, six topological phases in sequence: MTI (x=0-0.44), class-I MDSM (x=0.44), NI (x=0.44-0.67), class-II MDSM (x=0.67-0.78), MTI (x=0.78-0.89), and strong TI (x=0.89-1). The two MDSM classes are distinct: the class-I state is a parity-inversion Dirac point at $\Gamma$ marking the MTI-to-NI transition, while the class-II state has two Dirac nodes along the $\Gamma Z$ line protected by threefold rotation under combined parity-time symmetry, with Fermi arcs connecting the nodes. In the ferromagnetic state the same doping windows give a class-I Weyl semimetal with two Weyl nodes, a normal insulator, a class-II Weyl semimetal with eight Weyl nodes and Chern number $C=2$ on the $k_c=0$ plane, a time-reversal-breaking topological insulator, and finally the strong topological insulator of GeBi2Te4. The paper also claims that compressive strain on the normal-insulator composition x=0.56 can induce the two band inversions simultaneously, producing a Weyl phase with two pairs of Weyl points and Fermi arcs that almost span the Brillouin zone, and that the corresponding strained antiferromagnetic state has $Z_4=0$ with gapped surface states, a possible magnetic higher-order topological phase.

Load-bearing premise

The calculation assumes that one ordered 3x3x2 supercell at each Ge concentration represents the real random alloy, and the paper explicitly notes that the phase-boundary positions could shift with the chosen supercell even though the overall sequence is assumed to survive.

Editorial extensions

If this is right

  • A single growth parameter, Ge fraction, can in principle switch a crystal among a magnetic topological insulator, two magnetic Dirac semimetal classes, a trivial insulator, and a strong topological insulator.
  • The antiferromagnetic and ferromagnetic phase diagrams share transition points, so an external magnetic field or layer stacking could tune between Dirac and Weyl physics without changing the chemistry.
  • The normal-insulator window near x=0.44-0.67 is close to the charge-neutrality point, which may make the exotic states observable without the strong n-type doping that has hampered MnBi2Te4.
  • Straining the x=0.56 normal insulator produces a Weyl phase with two independent pairs of Weyl points and nearly Brillouin-zone-spanning Fermi arcs, a concrete experimental target.

Reading between the lines

Editorial extensions of the paper, not claims the author makes directly.

  • Beyond the paper, the phase diagram suggests that a composition gradient in one MGBT crystal would create real-space junctions between magnetic topological, Dirac, and Weyl states, a transport experiment the authors do not propose.
  • The strained antiferromagnetic state with $Z_4=0$ and gapped surfaces is left open; a natural test is to search for hinge or corner states that would confirm it as a higher-order magnetic insulator.
  • The same competition between two momentum-origin band inversions should appear in other MnBi2Te4-family substitutions, so the mapping method could be applied to Bi-site or Te-site replacement; this is an inference, not a paper claim.
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Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, and a circularity audit.

Referee Report

2 major / 4 minor

Summary. The paper uses DFT+U calculations on 3×3×2 supercells of Mn(1−x)GexBi2Te4 (MGBT) to map the topological phase evolution from MnBi2Te4 (x=0) to GeBi2Te4 (x=1). The authors introduce a band-momentum mapping (BMM) method that labels band states at the AFM Γ point by their origin (Γ0 or Z0) in the FM/NM Brillouin zone. Tracking the energy gaps Eg(Γ0) and Eg(Z0) as functions of doping, they claim six successive topological phases in the AFM state: MTI, class-I magnetic Dirac semimetal (MDSM), normal insulator (NI), class-II MDSM, MTI, and strong TI. For the FM state they claim class-I Weyl semimetal, NI, class-II Weyl semimetal with eight Weyl points, TRS-breaking TI, and strong TI. They further predict that a 2% triaxial compressive strain on the x=0.56 FM NI converts it into a WSM with two coexisting band inversions, long Fermi arcs, and Chern numbers changing by 2 across kc planes; the analogous AFM strained state is discussed as a potential higher-order topological phase.

Significance. If the predicted phase sequence is correct, MGBT would be a remarkable single material family in which one chemical substitution drives six distinct topological ground states, including two classes of magnetic Dirac semimetals and a strain-tunable Weyl phase with coexisting inversions. This would be genuinely valuable for both fundamental topological physics and device-oriented research. The paper's strengths include direct computational evidence for the phase assignments: parity eigenvalues, Wannier charge centers, Chern numbers, surface-state spectra, and Fermi arcs are computed rather than fitted. The BMM method is clearly explained and appears to be a useful complement to band unfolding. The central risk is that the predicted phase diagram is derived from a single ordered supercell per doping level, with the paper itself acknowledging that 'the specific TPT points may be related to the constructed supercell structure' (Section II A). The burden is therefore on demonstrating that the sequence of phases survives variation of the Ge/Mn arrangement and realistic disorder.

major comments (2)
  1. [Section II A and Methods B] The class-II MDSM assignment at x=0.67–0.78 is demonstrated using a strained parent MBT unit cell because the MGBT supercell lacks C3 rotational symmetry. The paper admits that the supercell itself 'results in a tiny gap of Dirac node in MGBT.' This raises two concerns: (i) the magnitude of this gap is not given, so it is impossible to judge whether the system is effectively a Dirac semimetal or a narrow-gap insulator; (ii) the representative band structure at x=0.78 in Fig. 3(b) is computed under 'a small strain (~0.37%)' (Section II C), so the phase at unstrained x=0.78 is not directly characterized. The classification of the class-II MDSM would be substantially strengthened by reporting the actual supercell gap at the nominal crossing and by clarifying whether the strained-parent calculation is used only to establish symmetry protection or also to locate the phase boundary.
  2. [Methods A and Section II A] The DFT+U value U=4.0 eV for Mn 3d is adopted without sensitivity analysis. Since the topological phase boundaries are set by the relative ordering of Γ0- and Z0-derived band edges, and since Mn 3d states hybridize with Bi p and Te p states near the gap, a U-dependence check (e.g., U=3–5 eV at x=0.44 and x=0.67) would show whether the claimed sequence is robust to the principal empirical parameter in the calculation. The magnetic moment is quoted as 5.0 μB, but the dependence of the band inversions on U is not reported; this is a testable and important check.
minor comments (4)
  1. [Affiliation] The affiliation contains a typo: 'Analysis & T esting Center' should be 'Analysis & Testing Center.'
  2. [Section II A, Fig. 1] The caption of Fig. 1(d–e) could state explicitly which lines correspond to which mapped momentum, since the reader must otherwise infer from the text that solid/dashed lines represent Γ0/Z0 origins; a legend in the figure would improve clarity.
  3. [References] Reference [40] is an arXiv preprint (arXiv:2503.06044) describing the authors' own experimental work; since the paper relies on it for 'Controllable and Continuous Quantum Phase Transitions,' it would be helpful to note its publication status or provide more experimental context in the text.
  4. [Section II E] The statement that the strained AFM x=0.56 state has Z4=0 and yet 'its TSS still exists but exhibit gapped features' is intriguing but under-explained; a sentence clarifying the relation between the Z4 index and the observed surface states would help avoid confusion.

Circularity Check

0 steps flagged · score 2.0 of 10

No circular reduction in the central phase diagram: the six topological states are read off directly from DFT/Wannier calculations, and the one self-citation is motivational rather than load-bearing.

full rationale

The central claim -- six successive topological states in AFM MGBT and five in FM MGBT -- is an output of DFT+U band-structure calculations on 3x3x2 supercells followed by Wannier-function-based topological invariants (Z2, WCC, Chern numbers) and surface-state calculations. These labels are computed, not fitted to reproduce the phase sequence; the phase boundaries are determined by computed Eg(Gamma0) and Eg(Z0) gap closures, and the BMM method is an analysis and mapping tool that tracks orbital and parity origins of bands, not a parameter that encodes the answer. The parent endpoints MBT and GBT are independently reproduced, providing external benchmarks. The only author self-citation is ref. [40], an arXiv preprint used for experimental motivation (Fermi-level tuning and TPT behavior near x = 0.46) and for context in the conclusion; it is not used to justify any band inversion, invariant, or phase assignment, so it is not load-bearing. The paper's own caveat that 'the specific TPT points may be related to the constructed supercell structure' (Section II A) identifies a modeling limitation of using one ordered lowest-energy supercell per doping ratio, but that is an approximation and robustness concern about disordered alloys, not a circular reduction of the topological predictions to the inputs. Accordingly, no specific circular step is exhibited.

Assumptions & free parameters 2 free parameters · 5 assumptions · 0 invented entities

The central claim rests on DFT+U, ordered supercells, the BMM mapping assumption, and a strained-parent approximation; two hand-set numbers (U and strain), plus several domain assumptions, carry the phase diagram.

free parameters (2)
  • Hubbard U for Mn 3d = 4.0 eV
    Set to reproduce a 5.0 μB Mn moment; standard for MBT, but hand-chosen and affects band gap and topological phase boundaries.
  • Strain values for phase access = 2% triaxial compressive (x=0.56), ~0.37% (x=0.78)
    Selected to induce simultaneous band inversions and to restore C3 symmetry; results depend on strain magnitude.
assumptions (5)
  • domain assumption PBE+U with U=4.0 eV gives reliable band ordering for MnBi2Te4-based materials
    Central to all band inversions; U choice inherited from MBT literature, not validated against experiment here.
  • domain assumption The lowest-energy ordered 3x3x2 supercell at each doping ratio represents the random alloy
    Only one configuration per x is used; no configurational averaging.
  • domain assumption Band folding does not change basic band characteristics, so mapping between AFM and NM/FM BZs is valid
    Underlies the BMM method and all phase identifications.
  • domain assumption A strained parent MnBi2Te4 unit cell can replace the doped supercell for symmetry-sensitive analysis
    Used to restore C3 rotation symmetry lost in supercells; the authors state it is effective but not proven generally.
  • standard math Standard topological band theory (Z2, WCC, Chern, Z4) applies to the computed Wannier Hamiltonians
    Backbone for identifying phases; no formal proof in the paper.

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Cite this review

Pith. "Pith review of Emergence of Diverse Topological States in Ge Doped MnBi2Te4." pith.science (2026). https://pith.science/paper/UO4ZFOWE

@misc{pith2026250522348,
  author       = {Pith},
  title        = {Pith review of: Emergence of Diverse Topological States in Ge Doped MnBi2Te4},
  year         = {2026},
  howpublished = {\url{https://pith.science/paper/UO4ZFOWE}},
  note         = {Machine review of arXiv:2505.22348}
}
read the original abstract

As an ideal platform for studying interplays between symmetry, topology and magnetism, the magnetic topological insulator (MTI) MnBi2Te4 has attracted extensive attentions. However, its strong n-type intrinsic defects hinder the realizations of exotic phenomena. Stimulated by recent discoveries that Ge doping can efficiently tune the position of Fermi level, here we systematically investigate the band evolution and topological phase diagram with doping concentration from MTI MnBi2Te4 to strong topological insulator GeBi2Te4. Different from magnetically doped Bi2Se3, the topology here is determined by competition of two band inversions arising from band folding of two time-reversal invariant momenta between antiferromagnetic and nonmagnetic/ferromagnetic unit cells. By employing a band momentum mapping method, besides the known MTI phase, remarkably, we find two classes of magnetic Dirac semimetal phases at antiferromagnetic state, two classes of Weyl semimetal phases at ferromagnetic state, and an intermediate trivial state at different doping regions. Interestingly, the trivial state can be tuned into a Weyl phase with two coexisting band inversions and extraordinarily long Fermi arcs by a small strain. Our work reveals diverse topological states with intrinsic quantum phenomena can be achieved with great potential for designing future electronic devices.

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Works this paper leans on

66 extracted references · 63 canonical work pages

  1. [1]

    M. Z. Hasan, and C. L. Kane, Colloquium: Topological Insulators, Rev. Mod. Phys. 82, 3045 (2010)

  2. [2]

    Qi, and S.-C

    X.-L. Qi, and S.-C. Zhang, Topological Insulators and Superconductors, Rev. Mod. Phys. 83, 1057 (2011)

  3. [3]

    C. K. Chiu, J. C. Y . Teo, A. P. Schnyder, and S. Ryu, Classification of Topological Quantum Matter with Symmetries, Rev. Mod. Phys. 88, 035005 (2016)

  4. [4]

    Bansil, H

    A. Bansil, H. Lin, and T. Das, Colloquium: Topological Band Theory, Rev. Mod. Phys. 88, 021004 (2016)

  5. [5]

    N. P . Armitage, E. J. Mele, and A. Vishwanath, Weyl and Dirac Semimetals in Three-Dimensional Solids, Rev. Mod. Phys. 90, 015001 (2018)

  6. [6]

    B. Q. Lv, T. Qian, and H. Ding, Experimental Perspective on Three-Dimensional Topological Semimetals, Rev. Mod. Phys. 93, 025002 (2021)

  7. [7]

    A. A. Burkov, Topological Semimetals, Nat. Mater. 15, 1145 (2016)

  8. [8]

    Bradlyn, L

    B. Bradlyn, L. Elcoro, J. Cano, M. G. Vergniory, Z. Wang, C. Felser, M. I. Aroyo, and B. A. Bernevig, Topological Quantum Chemistry, Nature 547, 298 (2017)

Show all 66 references
  1. [9]

    Zhang, Y

    T. Zhang, Y . Jiang, Z. Song, H. Huang, Y . He, Z. Fang, H. Weng, and C. Fang, Catalogue of Topological Electronic Materials, Nature 566, 475 (2019)

  2. [10]

    F. Tang, H. C. Po, A. Vishwanath, and X. Wan, Comprehensive Search for Topological Materials Using Symmetry Indicators, Nature 566, 486 (2019)

  3. [11]

    M. G. V ergniory, L. Elcoro, C. Felser, N. Regnault, B. A. Bernevig, and Z. Wang, A Complete Catalogue of High-Quality Topological Materials, Nature 566, 480 (2019)

  4. [12]

    C. L. Kane, and E. J. Mele, Quantum Spin Hall Effect in Graphene, Phys. Rev. Lett. 95, 226801 (2005)

  5. [13]

    C. L. Kane, and E. J. Mele, Z2 Topological Order and the Quantum Spin Hall Effect, Phys. Rev. Lett. 95, 146802 (2005)

  6. [14]

    B. A. Bernevig, T. L. Hughes, and S.-C. Zhang, Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells, Science 314, 1757 (2006)

  7. [15]

    C. L. Kane, and E. J. Mele, Topological Insulators in Three Dimensions, Phys. Rev. Lett. 98, 106803 (2007)

  8. [16]

    Zhang, C.-X

    H. Zhang, C.-X. Liu, X.-L. Qi, X. Dai, Z. Fang, and S.-C. Zhang, Topological Insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a Single Dirac Cone on the Surface, Nat. Phys. 5, 438 (2009)

  9. [17]

    W. A. Benalcazar, B. A. Bernevig, and T. L. Hughes, Quantized Electric Multipole Insulators, Science 357, 61 (2017)

  10. [18]

    X. Wan, A. M. Turner, A. Vishwanath, and S.Y . Savrasov, Topological Semimetal and Fermi-Arc Surface States in the Electronic Structure of Pyrochlore Iridates, Phys. Rev. B 83, 205101 (2011)

  11. [19]

    Z. Wang, H. Y. Sun, X.-Q. Chen, C. Franchini, G. Xu, H. Weng, X. Dai, and Z. Fang, Dirac Semimetal and Topological Phase Transitions in A3Bi(A=Na,K,Rb), Phys. Rev. B 85, 195320 (2012)

  12. [20]

    H. Weng, C. Fang, Z. Fang, B. A. Bernevig, and X. Dai, Weyl Semimetal Phase in Noncentrosymmetric Transition-Metal Monophosphides, Phys. Rev. X 5, 011029 (2015)

  13. [21]

    C. W . J. Beenakker, Search for Majorana Fermions in Superconductors, Annu. Rev. Condens. Matter Phys. 4, 113 (2013)

  14. [22]

    Alicea, New Directions in the Pursuit of Majorana Fermions in Solid State Systems , Rep

    J. Alicea, New Directions in the Pursuit of Majorana Fermions in Solid State Systems , Rep. Prog. Phys. 75, 076501 (2012)

  15. [23]

    R. Yu, W. Zhang, H.-J. Zhang, X. Dai, and Z. Fang, Quantized Anomalous Hall Effect in Magnetic Topological Insulators, Science 329, 61 (2010)

  16. [24]

    Chang, J

    C.-Z. Chang, J. Zhang, X. Feng, J. Shen, Z. Zhang, M. Guo, K. Li, Y. Ou, P. Wei, L.-L. Wang et al., Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator, Science 340, 167 (2013)

  17. [25]

    R. Li, J. Wang and X.-L. Qi, and S.-C. Zhang, Dynamical Axion Field in Topological Magnetic Insulators, Nat. Phys. 6, 284 (2010)

  18. [26]

    D. Xiao, J. Jiang, J.-H. Shin, W . Wang, F. Wang, Y .-F. Zhao, C. liu, W . Wu, M. H. Chan N. Samarth, and C.-Z. Chang, Realization of the Axion Insulator State in Quantum Anomalous Hall Sandwich Heterostructures, Phys. Rev. Lett. 120, 056801 (2018)

  19. [27]

    R. S. K. Mong, A. M. Essin, and J. E. Moore, Antiferromagnetic Topological Insulators, Phys. Rev. B 81, 245209 (2010)

  20. [28]

    J. Li, Y . Li, and S. Du, Z. Wang, B. -L. Gu, S. -C. Zhang, K.He, W . Duan and Y . Xu, Intrinsic Magnetic Topological Insulators in van der Waals Layered MnBi2Te4-Family Materials, Sci. Adv. 5, eaaw5685 (2019)

  21. [29]

    D. Zhang. M. Shi, T. Zhu, D. Xing, H. Zhang, and J. Wang, Topological Axion States in the Magnetic Insulator MnBi2Te4 with the Quantized Magnetoelectric Effect, Phys. Rev. Lett. 122, 206401 (2019)

  22. [30]

    M. M. Otrokov, I. I. Klimovskikh and H. Bentmann, D. Estyunin, A. Zeugner, Z. S. Aliev, S. Gaß, A. U. B. Wolter, A.V . Koroleva et al., Prediction and Observation of an Antiferromagnetic Topological Insulator, Nature 576, 416 (2019)

  23. [31]

    Y. Deng, Y. Yu and M. Z. Shi, Z. Guo, Z. Xu, J. Wang, X. H. Chen, and Y . Zhang, Quantum Anomalous Hall Effect in Intrinsic Magnetic Topological Insulator MnBi2Te4, Science 367, 895 (2020)

  24. [32]

    C. Liu, Y. Wang, H. Li, Y . Wu, Y. Li, J. Li, K. He, Y . Xu, J. Zhang, and Y . Wang, Robust Axion Insulator and Chern Insulator Phases in a Two-Dimensional Antiferromagnetic Topological Insulator, Nat. Mater. 19, 522 (2020)

  25. [33]

    Peng, and Y

    Y. Peng, and Y. Xu, Proximity-Induced Majorana Hinge Modes in Antiferromagnetic Topological Insulators, Phys. Rev. B 99, 195431 (2019)

  26. [34]

    Y . J. Hao, P . Liu, Y . Feng, X.-M. Ma, E. F. Schwier, M.Arita, S. Kumar, C. Hu, R. Lu, M. Zeng et al., Gapless Surface Dirac Cone in Antiferromagnetomagnetic Topological Insulator MnBi2Te4, Phys. Rev. X 9, 041038 (2019)

  27. [35]

    Li, S.-Y

    H. Li, S.-Y . Gao, S.-F. Duan, Y .-F. Xu, K.-J. Zhu, S.-J. Tian, J.-C. Gao, W.-H. Fan, Z.-C. Rao, J.-C. Huang et al., Dirac Surface States in Intrinsic Magnetic Topological Insulators EuSn2As2 and MnBi2nTe3n+1, Phys. Rev. X 9, 041039 (2019)

  28. [36]

    Y . J. Chen, L. X. Xu, J. H. Li, Y . W. Li, H. Y . Wang, C. F. Zhang, H. Li, Y . Wu, A. J. Liang, C. Chen et al., Topological Electronic Structure and Its Temperature Evolution in Antiferromagnetic Topological Insulator MnBi2Te4, Phys. Rev. X 9, 041040 (2019)

  29. [37]

    Huang, M.-H

    Z. Huang, M.-H. Du, J. Yan, and W . Wu, Native Defects in Antiferromagnetic Topological Insulator MnBi2Te4, Phys. Rev. Mater. 4, 121202 (2020)

  30. [38]

    Tan, and B

    H. Tan, and B. Yan, Distinct Magnetic Gaps between Antiferromagnetic and Ferromagnetic Orders Driven by Surface Defects in the Topological Magnet MnBi2Te4, Phys. Rev. Lett. 130, 126702 (2023)

  31. [39]

    X. Wu, C. Ruan, P . Tang, F. Kang, W . Duan, and J. Li, Irremovable Mn-Bi Site Mixing in MnBi2Te4, Nano Lett. 23, 5048 (2023)

  32. [40]

    S. Xu, Z. Shi, M. Yang, J. Wei, H. Xu, H. Feng, N. Cheng, J. Wang, W . Hao, and Y. Du, Controllable and Continuous Quantum Phase Transitions in Intrinsic Magnetic Topological Insulator, arXiv:2503.06044

  33. [41]

    A. S. Frolov, D. Y. Usachov, A. V. Tarasov, A. V . Fedorov, K. A. Bokai, I. Klimovskikh, V. S. Stolyarov, A. I. Sergeev, A. N. Larvrov, V . A. Golyashov et al., Magnetic Dirac Semimetal State of (Mn,Ge)Bi2Te4, Commun. Phys. 7, 180 (2024)

  34. [42]

    Neupane, S.-Y

    M. Neupane, S.-Y. Xu, L. A. Wray, A. Petersen, R. Shankar, N. Alidoust, C. Liu, A. Fedorov, H. Ji, J. M. Allred et al., Topological Surface States and Dirac Point Tuning in Ternary Topological Insulators, Phys. Rev. B 85, 235406 (2012)

  35. [43]

    A. M. Shikin, N. L. Zaitsev, T. P. Estyunina, D. A. Estyunin, A. G. Rybkin, D. A. Glazkova, I. I. Klimovskikh, A. V . Eryzhenkov, V . A. Golyashov et al., Phase Transitions, Dirac and W eyl Semimetal States in Mn1− xGexBi2Te4, Sci. Rep. 15, 1741 (2025)

  36. [44]

    D. S. Lee, T.-H. Kim, C.-H. Park, C. Y . Chung, Y. S. lim, W.-S. Seo, and H. -H. Park, Crystal Structure, Properties and Nanostructuring of a New Layered Chalcogenide Semiconductor, Bi2MnTe4, CrystEngComm 15, 5532 (2013)

  37. [45]

    L. E. Shelimova, O. G. Karpinskii, P. P. Konstantinov, E. S. Avilov, M. A. Kretova, and V . S. Zemskov, Crystal Structures and Thermoelectric Properties of Layered Compounds in the ATe–Bi2Te3(A=Ge,Sn,Pb) Systems, Inorg. Mater. 40, 451 (2004)

  38. [46]

    [28,41,42,47-50]

    See Supplemental Material for (1) supercell structures of Mn(1-x)GexBi2Te4 (MGBT) balancing maintenance of symmetry and energy minimum , (2) band momentum mapping method , evolution of electronic structure and topological properties of antiferromagnetic (AFM) MGBT, (3) detaile...

  39. [47]

    T. P. Estyunina, A. M. Shikin and D. A. Estyunin, A. V. Eryzhenkov, I. I. Klimovskikh, K. A. Bokai, V . A. Golyashov, K. A. Kokh, O. E. Tereshchenko, S. Kumar et al., Evolution of Mn 1−xGexBi2Te4 Electronic Structure under V ariation of Ge Content. Nanomaterials 13, 2151 (2023)

  40. [48]

    W. T. Guo, N. Yang and Z. Huang, and J.-M. Zhang, Novel Magnetic Topological Insulator FeBi2Te4 with Controllable Topological Quantum Phase, J. Mater. Chem. C 11, 12307 (2023)

  41. [49]

    W. Ku, T. Berlijn, and C. C. Lee, Unfolding First-Principles Band Structures, Phys. Rev. Lett. 104, 216401 (2010)

  42. [50]

    Z. Wang, H. Weng, Q. Wu, X. Dai, and Z. Fang, Three-Dimensional Dirac Semimetal and Quantum Transport in Cd3As2, Phys. Rev. B 88, 125427 (2013)

  43. [51]

    B. J. Yang, and N. Nagaosa, Classification of Stable Three-Dimensional Dirac Semimetals with Nontrivial Topology, Nat. Commun. 5, 4898 (2014)

  44. [52]

    S. M. Young, S. Zaheer, J. C. Y. Teo, C. L. Kane, E. J. Mele, and A.M. Rappe, Dirac Semimetal in Three Dimensions, Phys. Rev. Lett. 108, 140405 (2012)

  45. [53]

    P. Tang, Q. Zhou, G. Xu, and S.-C. Zhang, Dirac Fermions in an Antiferromagnetic Semimetal, Nat. Phys. 12, 1100 (2016)

  46. [54]

    Noguchi, M

    R. Noguchi, M. Kobayashi, Z. Jiang, K. Kuroda, T. Takahashi, Z. Xu, D. Lee, M. Hirayama, M. Ochi, T. Shirasawa et al., Evidence for a Higher-Order Topological Insulator in a Three-Dimensional Material Built from van der W aals Stacking of Bismuth-Halide Chains, Nat. Mater. 20,...

  47. [55]

    Xie, H.-X

    B. Xie, H.-X. Wang, X. Zhang, P. Zhan, J.-H. Jiang, M. Lu, and Y . Chen, Higher-Order Band Topology, Nat. Rev. Phys. 3, 520 (2021)

  48. [56]

    Luo, X.-H

    X.-J. Luo, X.-H. Pan, C.-X. Liu, and X. Liu, Higher-Order Topological Phases Emerging from Su-Schrieffer- Heeger Stacking, Phys. Rev. B 107, 045118 (2023)

  49. [57]

    W. A. Benalcazar, B. A. Bernevig. and T. L. Hughes, Electric Multipole Moments, Topological Multipole Moment Pumping, and Chiral Hinge States in Crystalline Insulators, Phys. Rev. B 96, 245115 (2017)

  50. [58]

    P . E. Blöchl, Projector Augmented-Wave Method, Phys. Rev. B 50, 17953 (1994)

  51. [59]

    Kresse, and J

    G. Kresse, and J. Furthmüller, Efficient Iterative Schemes for ab initio Total-Energy Calculations Using a Plane- Wave Basis set, Phys. Rev. B 54, 11169 (1996)

  52. [60]

    J. P. Perdew, K. Burke, and Ernzerhof, M. Generalized Gradient Approximation Made Simple, Phys. Rev. Lett. 77, 3865 (1996)

  53. [61]

    Grimme, J

    S. Grimme, J. Antony, S. Ehrlich, and H. Krieg, A Consistent and Accurate ab initio Parametrization of Density Functional Dispersion Correction (DFT-D) for the 94 Elements H-Pu, Chem. Phys. 132, 154104 (2010)

  54. [62]

    M. J. Han, T. Ozaki, and J. Yu, O(N) LDA+U Electronic Structure Calculation Method Based on the Nonorthogonal Pseudoatomic Orbital Basis, Phys. Rev. B 73, 045110 (2006)

  55. [63]

    Souza, N

    I. Souza, N. Marzari, and D. Vanderbilt, Maximally localized Wannier functions for entangled energy bands, Phys. Rev. B 65, 035109 (2001)

  56. [64]

    Marzari, A

    N. Marzari, A. A. Mostofi, J. R. Yates, I. Souza, and D. Vanderbilt, Maximally Localized Wannier Functions: Theory and Applications, Rev. Mod. Phys. 84, 1419 (2012)

  57. [65]

    Q. Wu, S. Zhang, H. F. Song, M. Troyer, and A. Soluyanov, WannierTools: An Open-Source Software Package for Novel Topological Material,. Comput. Phys. Commun. 224, 405 (2018)

  58. [66]

    G.-X. Zhi, C. Xu, S.-Q. Wu, F. Ning, and C. Cao, W annSymm: A Symmetry Analysis Code for Wannier Orbitals, Comput. Phys. Commun. 271, 108196 (2022)

Pith tools

Reviewed August 7, 2026 · model on record in the stance chip above.