arxiv: 1309.4569 · v1 · pith:4QXC7FQNnew · submitted 2013-09-18 · ❄️ cond-mat.mtrl-sci · cond-mat.mes-hall· cond-mat.supr-con

Epitaxial aluminum contacts to InAs nanowires

N. L. B. Ziino , P. Krogstrup , M. H. Madsen , E. Johnson , J. B. Wagner , C. M. Marcus , J. Nyg{\aa}rd , T. S. Jespersen This is my paper

classification ❄️ cond-mat.mtrl-sci cond-mat.mes-hallcond-mat.supr-con

keywords contactsaluminumdemonstrateepitaxialnanowiressuperconductingtemperaturebarrier-free

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We report a method for making epitaxial superconducting contacts to semiconducting nanowires. The temperature and gate characteristics demonstrate barrier-free electrical contact, and the properties in the superconducting state are investigated at low temperature. Half-covering aluminum contacts are realized without the need of lithography and we demonstrate how to controllably insert high-band gap layers in the interface region. These developments are relevant to hybrid superconductor-nanowire devices that support Majorana zero energy states.

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Epitaxial aluminum contacts to InAs nanowires

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