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Valley-tunable, even-denominator fractional quantum Hall state in the lowest Landau level of an anisotropic system

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arxiv 2303.11268 v1 pith:4YS3SJ43 submitted 2023-03-20 cond-mat.mes-hall cond-mat.mtrl-scicond-mat.str-el

Valley-tunable, even-denominator fractional quantum Hall state in the lowest Landau level of an anisotropic system

classification cond-mat.mes-hall cond-mat.mtrl-scicond-mat.str-el
keywords fqhsquantumanisotropicelectroneven-denominatorfractionalhalllandau
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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Fractional quantum Hall states (FQHSs) at even-denominator Landau level filling factors ($\nu$) are of prime interest as they are predicted to host exotic, topological states of matter. We report here the observation of a FQHS at $\nu=1/2$ in a two-dimensional electron system of exceptionally high quality, confined to a wide AlAs quantum well, where the electrons can occupy multiple conduction-band valleys with an anisotropic effective mass. The anisotropy and multi-valley degree of freedom offer an unprecedented tunability of the $\nu=1/2$ FQHS as we can control both the valley occupancy via the application of in-plane strain, and the ratio between the strengths of the short- and long-range Coulomb interaction by tilting the sample in the magnetic field to change the electron charge distribution. Thanks to this tunability, we observe phase transitions from a compressible Fermi liquid to an incompressible FQHS and then to an insulating phase as a function of tilt angle. We find that this evolution and the energy gap of the $\nu=1/2$ FQHS depend strongly on valley occupancy.

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