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arxiv 2310.18879 v3 pith:55O2VIFW submitted 2023-10-29 cond-mat.mes-hall quant-ph

Coupling conduction-band valleys in SiGe heterostructures via shear strain and Ge concentration oscillations

classification cond-mat.mes-hall quant-ph
keywords oscillationsstrainachievedconcentrationconduction-bandcouplingcouplingsoscillation
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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Engineering conduction-band valley couplings is a key challenge for Si-based spin qubits. Recent work has shown that the most reliable method for enhancing valley couplings entails adding Ge concentration oscillations to the quantum well. However, ultrashort oscillation periods are difficult to grow, while long oscillation periods do not provide useful improvements. Here, we show that the main benefits of short-wavelength oscillations can be achieved in long-wavelength structures through a second-order coupling process involving Brillouin-zone folding induced by shear strain. We finally show that such strain can be achieved through common fabrication techniques, making this an exceptionally promising system for scalable quantum computing.

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