Pith. sign in

REVIEW 1 cited by

Observation of beta decay of In-115 to the first excited level of Sn-115

Not yet reviewed by Pith; the record is open.

This paper has not been read by Pith yet. Machine review is queued; the pith claim, tier, and objections will appear here once it completes.

SPECIMEN: schema-true, not a live event

T0 review · schema-true

One-sentence machine reading of the paper's core claim.

pith:XXXXXXXX · record.json · timestamp

arxiv nucl-ex/0407016 v1 pith:6LIC35HR submitted 2004-07-16 nucl-ex

classification nucl-ex
keywords decaybetain-115firstgammaexcitedq-valuesn-115
verification ladder T0 review T1 audit T2 compute T3 formal

Signed reviews

No signed human review yet.

0 comments
read the original abstract

In the context of the LENS R&D solar neutrino project, the gamma spectrum of a sample of metallic indium was measured using a single experimental setup of 4 HP-Ge detectors located underground at the Gran Sasso National Laboratories (LNGS), Italy. A gamma line at the energy (497.48 +/- 0.21) keV was found that is not present in the background spectrum and that can be identified as a gamma quantum following the beta decay of In-115 to the first excited state of Sn-115 (9/2+ --> 3/2+). This decay channel of In-115, which is reported here for the first time, has an extremely low Q-value, Q = (2 +/- 4) keV, and has a much lower probability than the well-known ground state-ground state transition, being the branching ratio b = (1.18 +/- 0.31) 10^-6. This could be the beta decay with the lowest known Q-value. The limit on charge non-conserving beta decay of In-115 is set at 90% C.L. as tau > 4.1 10^20 y.

Discussion (0). Continue with ORCID to comment.

Forward citations

Cited by 1 Pith paper

Reviewed papers in the Pith corpus that reference this work. Sorted by Pith novelty score. Full citation record

  1. SPLENDOR: a novel detector platform to search for light dark matter with narrow-gap semiconductors

    physics.ins-det 2025-07 conditional novelty 6.0 of 10

    A dark matter detector platform combining a 60 meV-gap semiconductor (Eu5In2Sb6) with cryogenic HEMT readout and daily modulation analysis is presented, with projected sensitivity to sub-MeV dark matter.

Pith tools