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REVIEW 2 major objections 5 minor 49 references

Graphene-capped bismuthene can be detected ex situ through a 122 cm−1 Raman peak identified as the E2g phonon.

Reviewed by Pith at T0; open to challenge. T0 means a machine referee read the full paper against a public rubric. the ladder, T0–T4 →

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2026-08-04 17:40 UTC pith:A5QS2JUU

load-bearing objection Solid technique paper: the 122 cm^-1 B peak is almost certainly bismuthene's E2g mode; the cap-shift caveat is real but should be a revision request, not a rejection. the 2 major comments →

arxiv 2608.01961 v1 pith:A5QS2JUU submitted 2026-08-03 cond-mat.mtrl-sci cond-mat.mes-hall

Resonantly-enhanced Raman response in graphene-capped bismuthene on SiC

Lukas Gehrig , Cedric Schmitt , Erica Fragomeni , Simone Sotgiu , Stefan Enzner , Tommaso Venanzi , Bing Liu , Kilian Strau{\ss}
show 10 more authors
Jonas Erhardt Martin Kamp Elena Stellino Paolo Postorino J\"org Sch\"afer Simon Moser Christoph Stampfer Giorgio Sangiovanni Ralph Claessen Leonetta Baldassarre
This is my paper
classification cond-mat.mtrl-sci cond-mat.mes-hall
keywords bismutheneRaman spectroscopygraphene cappingquantum spin Hall insulatorphononE2g modeexcitonic resonanceintercalation
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved

The pith

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The paper claims that Raman micro-spectroscopy can detect the bismuthene monolayer beneath a graphene capping layer through a peak at about 122 cm−1, identified as the in-plane E2g phonon. If correct, this gives a fast, nondestructive, ex situ way to confirm successful intercalation and monitor sample quality, replacing slower ultra-high vacuum methods. The paper further shows that tuning the laser near the bismuthene exciton enhances the Raman response and exposes additional phonon modes, including an interlayer breathing mode between bismuthene and graphene.

Core claim

The central discovery is the assignment of the 122 cm−1 Raman peak to the doubly degenerate in-plane E2g optical phonon of the honeycomb bismuthene monolayer, analogous to the graphene G peak. The assignment rests on density functional perturbation theory phonon dispersions, the absence of the peak in bare SiC and graphene-on-SiC references, and the polarization-independent behavior expected for a degenerate zone-center mode. Under near-resonant excitation at 1.58 eV, the Raman signal is strongly enhanced, and additional modes appear, attributed to an interlayer breathing mode between bismuthene and graphene, a breathing mode against the SiC substrate, and higher-order two-phonon processes.

What carries the argument

The key machinery is the comparison of measured Raman spectra with DFPT phonon dispersions of bismuthene on SiC, which identifies the 122 cm−1 peak as the E2g in-plane optical phonon. A second simplified (2×2) graphene/(√3×√3)Bi/SiC model including van der Waals interactions predicts an interlayer breathing mode near 80 cm−1, matching a weak observed feature at 82 cm−1. The exciton-mediated resonance at 1.58 eV is what brings the weaker higher-order and interfacial modes above the noise.

Load-bearing premise

The DFPT phonon assignments rest on calculations that ignore the graphene capping layer and use a simplified supercell for the interlayer breathing mode, assuming the cap's weak van der Waals bonding does not measurably shift the bismuthene phonons.

What would settle it

Measure Raman of bismuthene capped with hexagonal boron nitride instead of graphene; if the 122 cm−1 peak shifts by more than a few cm−1, the graphene cap materially influences the mode and the DFPT assignment without the cap is not valid.

Watch this falsifier. Get emailed when new claim-graph text bears on it.

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If this is right

  • Bismuthene can be detected and mapped under graphene capping with an optical microscope Raman setup, in air, without UHV.
  • The nearly constant 5 cm−1 linewidth and stable peak position across the sample indicate high crystalline quality and negligible strain gradients, providing a rapid quality-control metric.
  • The strong enhancement at 1.58 eV suggests that resonant, exciton-mediated Raman scattering can probe exciton–phonon coupling in graphene-capped topological materials.
  • The presence of the B peak after months of ambient exposure confirms the protective function of the graphene cap and makes the material accessible to ex situ device workflows.

Where Pith is reading between the lines

These are editorial extensions of the paper, not claims the author makes directly.

  • The graphene cap's weak van der Waals coupling means the same fingerprint approach could work for other graphene-intercalated honeycomb monolayers, not just bismuthene, if their E2g modes fall in a measurable window.
  • The assignment of S1 to a bismuthene–graphene breathing mode could be tested by stacking-angle-dependent Raman measurements, since interlayer modes are sensitive to lattice registry and should shift with moiré period.
  • Because the resonance is tied to the B exciton of pristine bismuthene, precise control of p-type doping via the graphene cap could be used to tune the resonant enhancement on and off, turning the Raman map into an electronic-structure probe.
  • If topologically nontrivial phonons exist in bismuthene, as the paper anticipates by analogy with graphene, the resonance-enhancement regime reported here is a natural place to look for their signatures.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, simulated authors' rebuttal, and a circularity audit.

Referee Report

2 major / 5 minor

Summary. The manuscript reports ex situ Raman micro-spectroscopy of graphene-capped bismuthene on SiC(0001). A pronounced peak at ~122 cm^-1 is assigned to the E2g optical phonon of the bismuthene monolayer, based on its absence in bare SiC, spatial correlation with graphene G and 2D signals, polarization independence, and DFPT phonon calculations. Under 1.58 eV excitation, the authors observe resonant enhancement and additional modes S1–S7, assigning S1 to the graphene–bismuthene interlayer breathing mode and S3 to a Bi–SiC breathing mode, while leaving S2 and S4–S7 as likely higher-order processes. The paper proposes Raman micro-spectroscopy as an all-optical quality-control tool for encapsulated bismuthene and related topological materials.

Significance. If the central assignment is correct, the paper delivers a practical ex situ, rapid, non-destructive probe for bismuthene, a capability of genuine value given the material's ambient instability. The spatial Raman maps, the use of multiple excitation energies, and the direct comparison with first-principles phonon calculations are clear strengths; the DFPT calculation is parameter-free and is not fitted to the measured peak. The authors are also appropriately cautious about the unassigned S2/S4–S7 features and the tentative exciton-mediated enhancement. The principal risk is that the phonon calculation underpinning the 122 cm^-1 identification neglects the graphene cap, and the paper's justification for that neglect is an appeal to other intercalation systems rather than a quantitative test for bismuthene itself.

major comments (2)
  1. [Section 2, Fig. 1e] The identification of the 122 cm^-1 B peak as the E2g phonon rests on DFPT calculations that omit the graphene cap. The statement that the cap has 'negligible influence... due to weak van der Waals bonding' is supported by references to In and Ga intercalation systems, not by a calculation or measurement for Bi. This is not a purely formal gap, because Fig. 3b shows the cap p-type dopes bismuthene, and zone-center optical phonons in honeycomb monolayers can be doping- and screening-sensitive. If the actual capped-system E2g frequency differs from the uncapped DFPT value by more than the ~5 cm^-1 B-peak linewidth, the quantitative correspondence used for the assignment is not established. I request a Gamma-point phonon calculation including the cap (for example, within the 2x2 model already used in Section 3), or a quantitative estimate of doping/strain shifts. Without such a test, the co
  2. [Section 3, S1 assignment] The assignment of the 82 cm^-1 feature (S1) to the graphene–bismuthene interlayer breathing mode relies on a simplified (2x2) graphene/(√3×√3) Bi/SiC supercell in which the lattice constant is adjusted to preserve unstrained graphene. The real interface is incommensurate (6√3×6√3), and the agreement between the calculated 80 cm^-1 and the measured 82 cm^-1 may be coincidental. Because this assignment is one of the two explicit interfacial-mode claims in the resonant regime, the model uncertainty should be quantified (for example, by testing different cell sizes or van der Waals treatments) or the assignment should be explicitly labelled as tentative. The current text presents the 2x2 result as 'good agreement' without addressing how representative the artificial commensurate cell is.
minor comments (5)
  1. [Section 3, text after Fig. 3] Typo: 'spectrum aquired' should be 'spectrum acquired'.
  2. [Author affiliations] Affiliation 5: 'Peter Gruünberg' should be 'Peter Grünberg'.
  3. [Section 2, third paragraph] The phrase 'These regionsaremostlylocatedattheedgesofthesamesample' contains missing spaces and should be corrected.
  4. [Fig. 3 caption] The caption 'rgrey: SiC' appears garbled; likely 'grey: SiC'.
  5. [Section 2, Fig. 1e description] The description of band colors says green corresponds to pure bismuthene, black to SiC modes, and red to mixed modes, but in the figure it may be difficult to distinguish black and red; please clarify the legend or use higher-contrast colors.

Circularity Check

0 steps flagged

No circularity: the 122 cm^-1 B-peak assignment rests on independent DFPT phonon calculations, not on fitting or self-citation.

full rationale

The central claim is the identification of the ~122 cm^-1 Raman peak as the E2g phonon of bismuthene. This is supported by DFPT phonon-dispersion calculations for Bi/SiC, which are first-principles and not adjusted to match the measured 122 cm^-1 peak. The text states that the DFPT calculations predict a doubly degenerate zone-center optical phonon and that this corresponds to the observed feature; no fitted parameter or calibration ties the calculation to the measurement. The neglect of the graphene capping layer is a stated approximation justified by weak van der Waals bonding and references to prior intercalation systems. While this is a robustness concern, it is not circular: it does not define or derive the peak identity from the measurement itself. The BSE exciton energies from Ref. [23] are used only to interpret the resonant enhancement, which the paper explicitly labels tentative ('we tentatively assign'), and are not needed for the fundamental 122 cm^-1 assignment. The (2x2) model used for the interlayer breathing mode is an independent calculation compared with the observed 82 cm^-1 feature, not fitted to it. No load-bearing step reduces by construction to its own input, and no self-citation chain forces the conclusion.

Axiom & Free-Parameter Ledger

0 free parameters · 4 axioms · 0 invented entities

The central claims rest on standard DFT/DFPT simulations and established exciton physics; the main auxiliary assumptions are the neglect of the graphene cap in the phonon calculation and the transfer of pristine-bismuthene exciton energies to the p-doped capped system. No new physical entities are introduced; no free parameters are fitted to data.

axioms (4)
  • ad hoc to paper Graphene capping has negligible influence on the bismuthene phonon dispersion, so DFPT without graphene can be used to assign the B peak.
    Section 2: 'For simplicity, the calculations neglect the graphene capping layer, which, due to weak van der Waals bonding, has negligible influence on the phonon band structure [9,19,21].' This is a simplification central to the peak assignment.
  • domain assumption Excitonic resonances of pristine bismuthene (A at ~1.2 eV, B at ~1.63 eV from Ref [23]) remain a valid guide for the p-doped, graphene-capped system, with screening modifying but not eliminating excitons.
    Section 3: 'Since the excitation energy coincides with the excitonic transition of pristine bismuthene, we tentatively assign the observed Raman enhancement to an exciton-mediated scattering process' and 'consistent with an excitonic contribution that is not completely suppressed by screening.' The paper does not measure the exciton in the capped system.
  • ad hoc to paper The simplified (2x2) graphene on (sqrt3 x sqrt3) Bi/SiC model captures the graphene-bismuthene interlayer breathing mode near 80 cm^-1.
    Section 3: 'Because the complete intercalated structure corresponds to a (6 sqrt3 x 6 sqrt3) supercell... full phonon calculations are computationally impractical. Instead, we considered a (2x2) graphene layer... The calculations predict an interlayer breathing mode... at approximately 80 cm^-1.' This approximation is used to assign S1.
  • standard math Group theory of honeycomb lattices: there are three optical phonon branches; the doubly degenerate in-plane mode (E2g) is Raman active, the out-of-plane mode is silent.
    Section 2: 'Owing to the honeycomb lattice with two atoms per unit cell, both graphene and bismuthene possess three optical phonon branches... doubly degenerate in-plane optical mode and a lower-energy out-of-plane optical mode are expected as first-order Raman modes.' This standard result underlies the identification of the 122 cm^-1 peak.

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Cite this review

Pith. "Pith review of Resonantly-enhanced Raman response in graphene-capped bismuthene on SiC." pith.science (2026). https://pith.science/paper/A5QS2JUU

@misc{pith2026260801961,
  author       = {Pith},
  title        = {Pith review of: Resonantly-enhanced Raman response in graphene-capped bismuthene on SiC},
  year         = {2026},
  howpublished = {\url{https://pith.science/paper/A5QS2JUU}},
  note         = {Machine review of arXiv:2608.01961}
}
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read the original abstract

Two-dimensional quantum spin Hall insulators based on atomic monolayers offer a promising route toward dissipationless electronics, yet their practical use is often limited by environmental instability. Encapsulating the system with a graphene capping layer has been shown to be a reliable method to prevent oxidation and degradation. However, the confirmation of a successful encapsulation still relies on ultra-high vacuum techniques, that considerably slow the process. Here, we present an ex situ, rapid, nondestructive and spatially resolved Raman characterization of graphene-capped bismuthene, a honeycomb monolayer of Bi on SiC. A pronounced Raman scattering peak at around 122 cm-1 is identified as the E2g phonon of bismuthene, via a comparison with density functional perturbation theory calculations. We use excitation-energy and polarization-dependent Raman measurements to enable an unambiguous assignment of the spectral features. Tuning the excitation energy close to the excitonic transition in pristine bismuthene, we observe a strong enhancement of the Raman response and the emergence of additional scattering peaks. In this regime, higher-order phonon features, as well as interfacial modes between bismuthene and the SiC substrate, become visible, suggesting the involvement of resonant scattering processes. Our results establish Raman micro-spectroscopy as a versatile tool for probing graphene-protected quantum materials, providing access to lattice dynamics and interlayer coupling.

Figures

Figures reproduced from arXiv: 2608.01961 by Bing Liu, Cedric Schmitt, Christoph Stampfer, Elena Stellino, Erica Fragomeni, Giorgio Sangiovanni, Jonas Erhardt, J\"org Sch\"afer, Kilian Strau{\ss}, Leonetta Baldassarre, Lukas Gehrig, Martin Kamp, Paolo Postorino, Ralph Claessen, Simone Sotgiu, Simon Moser, Stefan Enzner, Tommaso Venanzi.

Figure 1
Figure 1. Figure 1: FIG. 1 [PITH_FULL_IMAGE:figures/full_fig_p002_1.png] view at source ↗
Figure 2
Figure 2. Figure 2: FIG. 2 [PITH_FULL_IMAGE:figures/full_fig_p003_2.png] view at source ↗
Figure 3
Figure 3. Figure 3: FIG. 3 [PITH_FULL_IMAGE:figures/full_fig_p005_3.png] view at source ↗

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Reference graph

Works this paper leans on

49 extracted references

  1. [1]

    Weber, M

    B. Weber, M. S. Fuhrer, X.-L. Sheng, S. A. Yang, R. Thomale, S. Shamim, L. W. Molenkamp, D. Cobden, D. Pesin, H. J. W. Zandvliet, P. Bampoulis, R. Claessen, F.R. Menges, J.Gooth, C. Felser, C.Shekhar, A.Tadich, M. Zhao, M. T. Edmonds, J. Jia, M. Bieniek, J. I. Väyry- nen, D. Culcer, B. Muralidharan, and M. Nadeem, 2024 roadmap on 2D topological insulators...

    2024

  2. [2]

    Michetti and B

    P. Michetti and B. Trauzettel, Devices with electrically tunable topological insulating phases, Appl. Phys. Lett. 102, 063503 (2013)

    2013

  3. [3]

    L. Kou, Y. Ma, Z. Sun, T. Heine, and C. Chen, Two-dimensional Topological Insulators: Progress and Prospects, J. Phys. Chem. Lett.8, 1905 (2017)

    1905

  4. [4]

    B. A. Bernevig and S.-C. Zhang, Quantum Spin Hall Ef- fect, Phys. Rev. Lett.96, 106802 (2006)

    2006

  5. [5]

    M. Z. Hasan and C. L. Kane, Colloquium: Topological insulators, Rev. Mod. Phys.82, 3045 (2010)

    2010

  6. [6]

    F. Reis, G. Li, L. Dudy, M. Bauernfeind, S. Glass, W. Hanke, R. Thomale, J. Schäfer, and R. Claessen, Bis- muthene on a SiC substrate: A candidate for a high- temperature quantum spin Hall material, Science357, 287 (2017)

    2017

  7. [7]

    Gehrig, C

    L. Gehrig, C. Schmitt, J. Erhardt, B. Liu, T. Wagner, M. Kamp, S. Moser, and R. Claessen, Bismuthene Under Cover: Graphene Intercalation of a Large Gap Quantum Spin Hall Insulator, Adv. Mater.37, 2502412 (2025)

    2025

  8. [8]

    Schmitt, J

    C. Schmitt, J. Erhardt, P. Eck, M. Schmitt, K. Lee, P. Keßler, T. Wagner, M. Spring, B. Liu, S. Enzner, M. Kamp, V. Jovic, C. Jozwiak, A. Bostwick, E. Roten- berg, T. Kim, C. Cacho, T.-L. Lee, G. Sangiovanni, S. Moser, and R. Claessen, Achieving environmental sta- bility in an atomically thin quantum spin Hall insula- tor via graphene intercalation, Nat. ...

    2024

  9. [9]

    Schmitt, S

    C. Schmitt, S. Sotgiu, S. Enzner, J. Erhardt, E. Stellino, D. Di Sante, G. Sangiovanni, R. Claessen, S. Moser, and L. Baldassarre, All-optical quality control of indenene in- tercalation into graphene/SiC, Appl. Phys. Lett.125, 223102 (2024)

    2024

  10. [10]

    Rosenzweig and U

    P. Rosenzweig and U. Starke, Large-area synthesis of a semiconducting silver monolayer via intercalation of epi- taxial graphene, Phys. Rev. B101, 201407 (2020)

    2020

  11. [11]

    Ghosal, M

    C. Ghosal, M. Gruschwitz, J. Koch, S. Gemming, and C. Tegenkamp, Proximity-Induced Gap Opening by Twisted Plumbene in Epitaxial Graphene, Phys. Rev. Lett.129, 116802 (2022)

    2022

  12. [12]

    Matta, P

    B. Matta, P. Rosenzweig, O. Bolkenbaas, K. Küster, and U. Starke, Momentum microscopy of Pb-intercalated graphene on SiC: Charge neutrality and electronic struc- ture of interfacial Pb, Phys. Rev. Res.4, 023250 (2022)

    2022

  13. [13]

    Forti, S

    S. Forti, S. Link, A. Stöhr, Y. Niu, A. A. Zakharov, C. Coletti, and U. Starke, Semiconductor to metal tran- sition in two-dimensional gold and its van der Waals het- erostack with graphene, Nat. Commun.11, 2236 (2020)

    2020

  14. [14]

    Stellino, C

    T.Venanzi, L.Graziotto, F.Macheda, S.Sotgiu, T.Ouaj, E. Stellino, C. Fasolato, P. Postorino, V. Mišeikis, M. Metzelaars, P. Kögerler, B. Beschoten, C. Coletti, S. Roddaro, M. Calandra, M. Ortolani, C. Stampfer, F. Mauri, and L. Baldassarre, Probing Enhanced Electron-Phonon Coupling in Graphene by Infrared Res- onance Raman Spectroscopy, Phys. Rev. Lett.13...

    2023

  15. [15]

    D. Graf, F. Molitor, K. Ensslin, C. Stampfer, A. Jungen, C. Hierold, and L. Wirtz, Spatially resolved Raman spec- troscopy of single-and few-layer graphene, Nano Lett.7, 238 (2007)

    2007

  16. [16]

    Graziotto, F

    L. Graziotto, F. Macheda, T. Venanzi, G. Marchese, S. Sotgiu, T. Ouaj, E. Stellino, C. Fasolato, P. Postorino, M. Metzelaars, P. Kögerler, B. Beschoten, M. Calandra, M. Ortolani, C. Stampfer, F. Mauri, and L. Baldassarre, Infrared Resonance Raman of Bilayer Graphene: Signa- tures of Massive Fermions and Band Structure on the 2D Peak, Nano Lett.24, 1867 (2024)

    2024

  17. [17]

    Saito, Y

    R. Saito, Y. Tatsumi, S. Huang, X. Ling, and M. Dressel- haus, Raman spectroscopy of transition metal dichalco- genides, J. Phys. Condens. Matter28, 353002 (2016)

    2016

  18. [18]

    W. He, M. T. Wetherington, K. A. Ulman, J. A. Robin- son, and S. Y. Quek, Interface-Mediated Resonant Ra- man Enhancement for Shear Modes in a 2D Polar Metal, J. Phys. Chem. C126, 14581 (2022)

    2022

  19. [19]

    W. He, M. T. Wetherington, K. A. Ulman, J. L. Gray, J. A. Robinson, and S. Y. Quek, Shear Modes in a 2D Polar Metal, J. Phys. Chem. Lett.13, 4015 (2022)

    2022

  20. [20]

    Zhang, X.-F

    X. Zhang, X.-F. Qiao, W. Shi, J.-B. Wu, D.-S. Jiang, and P.-H. Tan, Phonon and Raman scattering of two- dimensional transition metal dichalcogenides from mono- layer, multilayer to bulk material, Chem. Soc. Rev.44, 2757 (2015)

    2015

  21. [21]

    M. T. Wetherington, F. Turker, T. Bowen, A. Vera, S. Rajabpour, N. Briggs, S. Subramanian, A. Maloney, and J. A. Robinson, 2-dimensional polar metals: a low- frequency Raman scattering study, 2D Mater.8, 041003 (2021)

    2021

  22. [22]

    A. C. Ferrari, J. C. Meyer, V. Scardaci, C. Casiraghi, M. Lazzeri, F. Mauri, S. Piscanec, D. Jiang, K. S. Novoselov, S. Roth, and A. K. Geim, Raman spectrum of graphene and graphene layers, Phys. Rev. Lett.97, 187401 (2006)

    2006

  23. [23]

    Syperek, R

    M. Syperek, R. Stühler, A. Consiglio, P. Holewa, P. Wyborski, Ł. Dusanowski, F. Reis, S. Höfling, R. Thomale, W. Hanke, R. Claessen, D. Di Sante, and C. Schneider, Observation of room temperature excitons in an atomically thin topological insulator, Nat. Com- mun.13, 6313 (2022)

    2022

  24. [24]

    K. V. Emtsev, A. Bostwick, K. Horn, J. Jobst, G. L. Kellogg, L. Ley, J. L. McChesney, T. Ohta, S. A. Re- shanov, J. Röhrl, E. Rotenberg, A. K. Schmid, D. Wald- mann, H. B. Weber, and T. Seyller, Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide, Nat. Mater.8, 203 (2009)

    2009

  25. [25]

    Riedl, C

    C. Riedl, C. Coletti, and U. Starke, Structural and elec- tronic properties of epitaxial graphene on SiC(0001): a review of growth, characterization, transfer doping and hydrogen intercalation, J. Phys. D: Appl. Phys.43, 374009 (2010)

    2010

  26. [26]

    Y. Sohn, S. W. Jung, F. Göhler, W. J. Shin, S. Cha, T. Seyller, and K. S. Kim, Electronic band structure of Bi-intercalate layers in graphene and SiC(0001), J. Ko- rean Phys. Soc.78, 157 (2021)

    2021

  27. [27]

    Tilgner, S

    N. Tilgner, S. Wolff, S. Soubatch, T.-L. Lee, A. D. Peña Unigarro, S. Gemming, F. S. Tautz, T. Seyller, C. Kumpf, F. Göhler, and P. Schädlich, Reversible switching of the environment-protected quantum spin Hall insulator bismuthene at the graphene/SiC interface, Nat. Commun.16, 6171 (2025)

    2025

  28. [28]

    Stöhr, S

    A. Stöhr, S. Forti, S. Link, A. A. Zakharov, K. Kern, U. Starke, and H. M. Benia, Intercalation of graphene on SiC(0001) via ion implantation, Phys. Rev. B94, 085431 (2016)

    2016

  29. [29]

    Malard, M

    L. Malard, M. Pimenta, G. Dresselhaus, and M. Dressel- haus, Raman spectroscopy in graphene, Phys. Rep.473, 51 (2009)

    2009

  30. [30]

    Neumann, S

    C. Neumann, S. Reichardt, P. Venezuela, M. Drögeler, L. Banszerus, M. Schmitz, K. Watanabe, T. Taniguchi, F. Mauri, B. Beschoten, S. V. Rotkin, and C. Stampfer, Raman spectroscopy as probe of nanometre-scale strain variations in graphene, Nat. Commun.6, 8429 (2015)

    2015

  31. [31]

    D.S.Lee, C.Riedl, B.Krauss, K.vonKlitzing, U.Starke, and J. H. Smet, Raman Spectra of Epitaxial Graphene on SiC and of Epitaxial Graphene Transferred to SiO2, Nano Lett.8, 4320 (2008)

    2008

  32. [32]

    Mamiyev, N

    Z. Mamiyev, N. O. Balayeva, C. Ghosal, D. R. Zahn, and C. Tegenkamp, Confinement induced strain effects in epitaxial graphene, Carbon234, 120002 (2025)

    2025

  33. [33]

    Shtepliuk, I

    I. Shtepliuk, I. G. Ivanov, T. Iakimov, R. Yakimova, A. Kakanakova-Georgieva, P. Fiorenza, and F. Gian- nazzo, Raman probing of hydrogen-intercalated graphene onSi-face4H-SiC,Mater.Sci.Semicond.Process.96,145 (2019)

    2019

  34. [34]

    Mounet and N

    N. Mounet and N. Marzari, First-principles determina- tion of the structural, vibrational and thermodynamic properties of diamond, graphite, and derivatives, Phys. Rev. B71, 205214 (2005)

    2005

  35. [35]

    Dubay and G

    O. Dubay and G. Kresse, Accurate density functional cal- culations for the phonon dispersion relations of graphite layer and carbon nanotubes, Phys. Rev. B67, 035401 (2003)

    2003

  36. [36]

    A. C. Ferrari and D. M. Basko, Raman spectroscopy as a versatile tool for studying the properties of graphene, Nat. Nanotechnol.8, 235 (2013)

    2013

  37. [37]

    Nemanich, G

    R. Nemanich, G. Lucovsky, and S. Solin, Infrared active 8 optical vibrations of graphite, Solid State Commun.23, 117 (1977)

    1977

  38. [38]

    D. Yoon, H. Moon, Y.-W. Son, G. Samsonidze, B. H. Park, J. B. Kim, Y. Lee, and H. Cheong, Strong polar- ization dependence of double-resonant Raman intensities in graphene, Nano Lett.8, 4270 (2008)

    2008

  39. [39]

    Borovikov and A

    V. Borovikov and A. Zangwill, Step-edge instability dur- ing epitaxial growth of graphene from SiC(0001), Phys. Rev. B80, 121406(R) (2009)

    2009

  40. [40]

    Cardona, Light Scattering in Solids I: Introductory Concepts, Springer Science & Business Media (2005)

    M. Cardona, Light Scattering in Solids I: Introductory Concepts, Springer Science & Business Media (2005)

    2005

  41. [41]

    Sotgiu, T

    S. Sotgiu, T. Venanzi, F. Macheda, E. Stellino, M. Or- tolani, P. Postorino, and L. Baldassarre, Raman scat- tering with infrared excitation resonant with the MoSe2 indirect band gap, Phys. Rev. B106, 085204 (2022)

    2022

  42. [42]

    Loudon, The Raman effect in crystals, Adv

    R. Loudon, The Raman effect in crystals, Adv. Phys.13, 423 (1964)

    1964

  43. [43]

    Nalabothula, L

    M. Nalabothula, L. Wirtz, and S. Reichardt, Origin of Interlayer Exciton–Phonon Coupling in 2D Heterostruc- tures, Nano Lett.25, 6160 (2025)

    2025

  44. [44]

    H. Guo, T. Yang, M. Yamamoto, L. Zhou, R. Ishikawa, K. Ueno, K. Tsukagoshi, Z. Zhang, M. S. Dresselhaus, and R. Saito, Double resonance Raman modes in mono- layer and few-layer MoTe2, Phys. Rev. B91, 205415 (2015)

    2015

  45. [45]

    Sotgiu, T

    S. Sotgiu, T. Venanzi, M. Nalabothula, E. Stellino, E. Fragomeni, A. Nucara, M. Ortolani, L. Wirtz, and L. Baldassarre, Raman spectroscopy at 1550 nm: Res- onant enhancement of two-phonon scattering in MoTe2 crystals, Phys. Rev. B113, 085201 (2026)

    2026

  46. [46]

    A. Raja, A. Chaves, J. Yu, G. Arefe, H. M. Hill, A. F. Rigosi, T. C. Berkelbach, P. Nagler, C. Schüller, T. Korn, C. Nuckolls, J. Hone, L. E. Brus, T. F. Heinz, D. R. Reichman, and A. Chernikov, Coulomb engineering of the bandgap and excitons in two-dimensional materials, Nat. Commun.8, 15251 (2017)

    2017

  47. [47]

    Tebbe, M

    D. Tebbe, M. Schütte, K. Watanabe, T. Taniguchi, C. Stampfer, B. Beschoten, and L. Waldecker, Tailoring the dielectric screening in WS2–graphene heterostruc- tures, npj 2D Mater. Appl.7, 29 (2023)

    2023

  48. [48]

    H. M. Hill, A. F. Rigosi, A. Raja, A. Chernikov, C. Roquelet, and T. F. Heinz, Exciton broadening in WS2/graphene heterostructures, Phys. Rev. B96, 205401 (2017)

    2017

  49. [49]

    J. Li, J. Li, J. Tang, Z. Tao, S. Xue, J. Liu, H. Peng, X.-Q. Chen, J. Guo, and X. Zhu, Direct observation of topological phonons in graphene, Phys. Rev. Lett.131, 116602 (2023)

    2023

This paper was first reviewed by deepseek-v4-flash on August 4, 2026.