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arxiv 2109.00169 v1 pith:ATJ6FIC4 submitted 2021-09-01 cond-mat.mtrl-sci cond-mat.mes-hallphysics.app-ph

Epitaxial Integration of a Perpendicularly Magnetized Ferrimagnetic Metal on a Ferroelectric oxide for Electric-Field Control

classification cond-mat.mtrl-sci cond-mat.mes-hallphysics.app-ph
keywords epitaxialferrimagnetferrimagneticferrimagnetsferroelectricgreatmagnetizedmn2ga
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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Ferrimagnets, which contain the advantages of both ferromagnets (detectable moments) and antiferromagnets (ultrafast spin dynamics), have recently attracted great attention. Here we report the optimization of epitaxial growth of a tetragonal perpendicularly magnetized ferrimagnet Mn2Ga on MgO. Electrical transport, magnetic properties and the anomalous Hall effect (AHE) were systematically studied. Furthermore, we successfully integrated high-quality epitaxial ferrimagnetic Mn2Ga thin films onto ferroelectric PMN-PT single crystals with a MgO buffer layer. It was found that the AHE of such a ferrimagnet can be effectively modulated by a small electric field over a large temperature range in a nonvolatile manner. This work thus demonstrates the great potential of ferrimagnets for developing high-density and low-power spintronic devices.

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