Quantum Spin Hall Effect in IV-VI Topological Crystalline Insulators

Marta Galicka; Perla Kacman; Ryszard Buczko; Shiva Safaei

Quantum Spin Hall Effect in IV-VI Topological Crystalline Insulators

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arxiv 1501.04728 v1 pith:BUUYH5IX submitted 2015-01-20 cond-mat.mtrl-sci cond-mat.mes-hall

Shiva Safaei , Marta Galicka , Perla Kacman , Ryszard Buczko This is my paper · ORCID

classification cond-mat.mtrl-scicond-mat.mes-hall

keywords filmsspintopologicaldiracorientedsnsesntetwo-dimensional

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abstract

We envision that quantum spin Hall effect should be observed in $(111)$-oriented thin films of SnSe and SnTe topological crystalline insulators. Using a tight-binding approach supported by first-principles calculations of the band structures we demonstrate that in these films the energy gaps in the two-dimensional band spectrum depend in an oscillatory fashion on the layer thickness. These results as well as the calculated topological invariant indexes and edge state spin polarizations show that for films ~20-40 monolayers thick a two-dimensional topological insulator phase appears. In this range of thicknesses in both, SnSe and SnTe, (111)-oriented films edge states with Dirac cones with opposite spin polarization in their two branches are obtained. While in the SnTe layers a single Dirac cone appears at the projection of the G point of the two-dimensional Brillouin zone, in the SnSe (111)-oriented layers three Dirac cones at M points projections are predicted.

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One-dimensional Dirac modes in the core of a pentagonal topological crystalline insulator nanowire
cond-mat.mes-hall 2026-08 conditional novelty 7.0 of 10

Pentagonal SnTe-class nanowires with cationic twin planes are predicted to host two spatially separated helical Dirac modes, one at the core and one at the outer surface.

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