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Minute-long quantum coherence enabled by electrical depletion of magnetic noise
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Minute-long quantum coherence enabled by electrical depletion of magnetic noise
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Integrating solid-state spin defects into classical electronic devices can enable new opportunities for quantum information processing that benefit from existing semiconductor technology. Here, we investigate the impact of bias control of an isotopically purified silicon carbide (SiC) p-i-n diode on the coherence of embedded spins. We show that the diode allows for the depletion of not only the electrical, but also the magnetic noise sources. This results in extended relaxation and coherence times of individual electronic and nuclear spins, with Hahn echo times exceeding values reported for single spins in any platform (> 100 seconds). These results demonstrate the importance of materials control and electronic device integration to create highly coherent solid-state quantum technology.
Forward citations
Cited by 2 Pith papers
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Narrow magneto-optical transitions in Erbium implanted silicon carbide-on-insulator
Erbium dopants in SiC-on-insulator exhibit sub-MHz homogeneous linewidths with two stabilizing lattice sites identified through cryogenic spectroscopy.
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Spectator-transition crosstalk in a spin-3/2 silicon vacancy qudit in silicon carbide revealed by broadband Ramsey interferometry
A spin-3/2 silicon-vacancy qudit's Ramsey signal is shown to contain six detuning-dependent frequency branches arising from pairwise coherences between all four spin sublevels.
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