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Self-strain suppression of the metal-to-insulator transition in phase-change oxide devices

T0 review · 4 major / 4 minor · reviewed 2026-08-06 · deepseek-v4-flash

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Pith's one-line read Strain arising from the lattice mismatch between pristine and irradiated V2O3 suppresses the metal-to-insulator transition, and in narrow irradiated regions it can suppress the transition entirely.

desk verdict A novel energy-dependent inversion of MIT suppression location in irradiated V2O3 devices, but the causal strain story rests on single-cycle, single-device evidence. read the letter →

arxiv 2508.00347 v1 pith:F7V2EMDS submitted 2025-08-01 cond-mat.mes-hall cond-mat.mtrl-sci

Nicolò D'Anna , Nareg Ghazikhanian , Erik S. Lamb , Edoardo Zatterin , Mingze Wan , Ashley Thorshov , Ivan K. Schuller , Oleg Shpyrko This is my paper · ORCID
classification cond-mat.mes-hallcond-mat.mtrl-sci PACS 71.30.+h61.80.Jh68.37.Yz
keywords vanadiumsesquioxidemetal-to-insulatortransitionX-raynano-diffractionionirradiationself-inducedstrainphase-changeoxidedevicesneuromorphiccomputingstructuralphase
verification ladder T0 review T1 audit T2 compute T3 formal

The pith

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The reading

This paper reports X-ray nano-diffraction images of vanadium sesquioxide (V2O3) micro-devices containing a strip of Ga-irradiated material, taken across the metal-to-insulator transition temperature. Irradiation is supposed to lower the transition temperature in the strip so that a conductive filament forms there more easily. The authors find instead that, near the transition, the crystal lattice in the irradiated strip remains tilted while the pristine material relaxes, and the resulting strain at the boundary suppresses the transition. Depending on irradiation energy and the width of the tilted region, the suppression sits at the edges of the strip, or in a narrow strip it covers the whole irradiated region, producing the opposite of the intended effect. A sympathetic reader would care because phase-change oxides are candidate building blocks for neuromorphic devices, and this self-straining mechanism sets a limit on how small the irradiated region can be.

What carries the argument

The carrying object is a pair of X-ray nano-diffraction maps: the center of mass of the Bragg peak on the detector's $\omega$ axis (crystal tilt) and on its $2\theta$ axis (out-of-plane lattice spacing), measured at 65 nm resolution across each device. At each temperature the device is imaged through the $\mathrm{M}(31\bar{1})$ monoclinic and $\mathrm{C}(110)$ corundum reflections. The mechanism is identified by the spatial correlation between the steepest slope in the $\omega$ tilt profile and the regions where $2\theta$ stays at the compressed, insulating value: the tilt mismatch between the irradiated strip and the pristine matrix creates strain, and that strain suppresses the structural transition locally. The paper argues that the defect distribution from irradiation controls how wide the tilted region is, which in turn controls where the strain-induced suppression appears.

What would settle it

Repeat the measurement on cooling from 300 K to 20 K, or image the same device after a second thermal cycle: if the $\omega$ tilt in the irradiated region and the accompanying $2\theta$ suppression do not reproduce, the self-strain mechanism is not the equilibrium cause. Alternatively, use scanning microwave impedance microscopy at 130 K to check whether the regions where $2\theta$ remains compressed are actually more resistive than the surrounding metallic phase; if they are not, the structural suppression does not control the metal-to-insulator transition.

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Extended reading notes

Core claim

The central claim is that the metal-to-insulator transition (MIT) in a phase-change oxide device can be suppressed by strain that the device generates on itself, with no external stress. In V2O3, the MIT is coupled to a structural transition: the low-temperature insulating monoclinic phase has a tilted lattice and a compressed out-of-plane spacing, while the high-temperature metallic corundum phase is untilted and expanded. Focused Ga-ion irradiation lowers the MIT critical temperature in the exposed strip, so on warming the strip should become metallic before the pristine film. Instead, X-ray nano-diffraction maps at 130 K show that the irradiated strip retains the low-temperature monoclinic tilt, and where the slope of the tilt is steepest the out-of-plane lattice spacing fails to expand, i.e., the metallic corundum phase is locally suppressed. For the 16 kV device the suppression appears as sidebands at the edges of the irradiated region; for the 8 kV device the tilted zone is narrower and the suppression sits in the center; for the 4 kV device no clear suppression is seen. The conclusion states that if the irradiated region is too narrow, strain can suppress the MIT across the whole region, reversing the intended lowering of the transition temperature.

Load-bearing premise

The X-ray maps were taken during a single warming cycle from 20 K to 300 K; if the retained tilt in the irradiated region is a metastable remnant of that thermal history rather than a defect-stabilized equilibrium property, the strain-induced suppression inferred from the tilt/lattice-spacing correlation would not follow.

Editorial extensions

If this is right

  • For devices that use an irradiated strip to guide a conductive filament, the strip must be wide enough that strain-induced MIT suppression does not reach its center; the 8 kV device shows a narrow tilted zone that suppresses the transition in the middle and raises device resistance.
  • Irradiation energy is not the only design parameter: the same geometric strip width can produce edge suppression at 16 kV and center suppression at 8 kV, so width and energy must be optimized together.
  • Self-straining should be expected whenever a metallic phase domain forms inside an insulating matrix in a phase-change oxide, meaning electrically switched devices will also create a phase-mismatch boundary.
  • As device dimensions shrink, the irradiated or switched region may become too small to relax the strain, making strain-induced suppression a physical constraint on miniaturization.

Reading between the lines

Editorial extensions of the paper, not claims the author makes directly.

  • If the same self-strain acts during electrical switching, the conductive filament may be deflected or blocked at the phase-mismatch boundary, a plausible microscopic source of cycle-to-cycle variability in phase-change oxide devices.
  • A testable extension: vary the width of the irradiated strip at fixed irradiation energy; the mechanism predicts a crossover from edge suppression on wide strips to center suppression on narrow strips at a width comparable to the strain relaxation length.
  • The paramagnetic insulating low-pressure phase suggested for the center of the 16 kV region could be verified by measuring the full lattice parameters there, tying the structural data to the V2O3 phase diagram.
  • If strain dominates in small devices, the route for neuromorphic devices is not simply shrinking the irradiated region but engineering a strain-absorbing buffer or a graded defect profile at its edges.
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Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, and a circularity audit.

Referee Report

4 major / 4 minor

Summary. The paper reports X-ray nano-diffraction imaging of Ga-irradiated V2O3 microdevices at 20 K, 130 K, and 300 K. At 130 K, near the metal-to-insulator transition of the pristine material, the irradiated region retains a monoclinic tilt while the out-of-plane lattice spacing partially converts toward the corundum phase, with the remaining insulating (M-phase) fraction located at the irradiated-region edges in a 16 kV device and at the center in an 8 kV device. The authors attribute this pattern to self-strain induced by the lattice/tilt mismatch between the pristine and irradiated regions. They conclude that for sufficiently narrow irradiated regions this self-strain can suppress the metal-to-insulator transition across the whole region, reversing the intended effect of irradiation, and that such self-straining may constrain device miniaturization in phase-change oxides.

Significance. If the self-strain mechanism is correct, the paper identifies a new design parameter for phase-change oxide devices: not only the irradiation energy but also the width of the irradiated region, because strain from the phase/tilt mismatch can locally suppress the intended metallic phase. The energy-dependent inversion of the suppression location (center for 8 kV, edges for 16 kV) is a striking and falsifiable observation, and the accompanying data-availability statement (ESRF portal) makes the raw maps accessible. The paper also gives due credit to prior work on self-induced strain in V2O3 and VO2 and connects to the broader neuromorphic-device context. However, the causal attribution to equilibrium strain is not fully established by the present dataset, as detailed in the major comments.

major comments (4)
  1. [Section 2, paragraph beginning 'Results presented here are obtained by a single temperature cycle...'] The central causal claim that the omega-tilt mismatch produces equilibrium self-strain that suppresses the metal-to-insulator transition rests on maps acquired during a single warming run from 20 K to 300 K. V2O3 has strong thermal hysteresis, which the authors themselves note, and the retained omega(M) tilt in the irradiated region at 130 K and 300 K could be a defect-pinned metastable remnant of the initial cooling rather than a stable structural property. The authors even raise the analogous question for the 300 K mismatch. Without a cooling-cycle measurement or an independent equilibrium structural probe, the spatial correlation between the omega slope and the 2theta suppression in Figs. 2e and 4b does not uniquely identify strain as the cause; local disorder or phase pinning could produce the same maps.
  2. [Section 2, paragraph defining c2theta and comega] The maps are computed as Bragg-peak center-of-mass positions on the detector. At 130 K, V2O3 exhibits phase coexistence (as acknowledged via Ref. [36]), and within the 65 nm beam footprint a mixture of C(110) and M(31-1) domains will produce intermediate 2theta and omega values without any strain-induced shift of a single lattice. The 'suppression' in Fig. 2e, where 2theta remains closer to the M(31-1) value at the edges, is therefore equally consistent with a higher volume fraction of the insulating monoclinic phase as with a strained lattice. To support the strain mechanism, the authors should fit the individual peaks or quantify the phase fractions within each pixel rather than relying solely on center-of-mass shifts.
  3. [Figs. 3 and 4, comparison of 8 kV and 16 kV devices] The central scaling conclusion—that the suppression location moves from the edges (16 kV) to the center (8 kV) because of the width of the tilt-retaining region—is based on single devices for each irradiation energy. No error bars, replicate devices, or propagated uncertainties are provided for the line profiles, and the statement that the omega tilt value is 'identical' for 8 and 16 kV is not supported by a quantitative analysis. Device-to-device variability is a known issue in such nanoscale devices (per the manuscript's own introduction), so at least one additional device per energy or a quantitative uncertainty estimate is needed to make the energy-dependence claim robust.
  4. [Section 2, final paragraph of Results and Discussion] The authors offer an alternative explanation for the 130 K state in the irradiated region: the possible formation of a paramagnetic insulating low-pressure phase of V2O3 with the corundum out-of-plane lattice parameter and the monoclinic in-plane parameter. This is a non-strain mechanism that could reproduce the observed combination of expanded 2theta and monoclinic tilt. Since the manuscript does not present evidence distinguishing this phase-coexistence explanation from the self-strain explanation, the attribution of the suppression to strain remains underdetermined. A measurement of in-plane lattice parameters or a different reflection would help discriminate between the two scenarios.
minor comments (4)
  1. [Fig. 3 caption] The caption states that '2theta remains closer to the low temperature C(110) phase 2theta(C)'; this should refer to the low-temperature M(31-1) phase, since C(110) is the high-temperature metallic phase.
  2. [Reference [46]] The dataset reference describes the sample as 'vanadium dioxide (VO2)', but the manuscript concerns V2O3; the dataset title should be corrected to avoid confusion.
  3. [Fig. 4 caption] The caption says 'average tilt across devices', which is misleading because the average is along the y-axis for a single device per energy, not across multiple devices; rephrasing as 'line average along y' would be clearer.
  4. [Figs. 1-4] The color scales for omega and 2theta are not defined with absolute values and units; adding labeled color bars would improve the interpretability of the maps and profiles.

Circularity Check

0 steps flagged · score 0.0 of 10

No significant circularity: the strain–MIT-suppression correlation is read directly from measured ω and 2θ maps, and the cited prior work by the same group is corroborative rather than load-bearing.

full rationale

The paper contains no equations, fitted parameters, or model inversion whose output is equivalent to its input. The central inference is that a spatial gradient in the measured ω tilt (Figs. 2a-c, 3a) coexists with suppression of the 2θ change near the irradiated-region edges (Figs. 2d-f, 3b, 4), and the paper states this correlation explicitly: 'At 130 K, suppression of 2θ change is strongest where the slope of ω change is largest. Indicating that MIT suppression is due to strain.' The correlation is between two independently recorded detector coordinates, so the claim is not true by construction. References [32] and [35] are prior experimental results by overlapping authors, but they are used as context and corroboration ('as expected from the lower Tc due to irradiation [32]'; 'corroborating our results'), not as the derivation of the present observation; removing them would not make the spatial correlation circular. The single-temperature-cycle caveat noted in the paper is a legitimate limitation on causal attribution and thermal-history dependence, but it is an underdetermination/correctness concern, not a circular reduction. No self-definitional, fitted-input, uniqueness-imported, or ansatz-smuggling pattern is present, so the appropriate finding is no significant circularity.

Assumptions & free parameters 0 free parameters · 5 assumptions · 0 invented entities

The central claim rests on a chain of interpretation: Bragg peak positions map to phases, irradiation lowers Tc per ref [32], a Gaussian dose profile explains width differences, and tilt mismatch produces strain that suppresses the MIT. No free parameters are fitted; the analysis is qualitative and image-based. No new entities are introduced.

assumptions (5)
  • domain assumption Bragg peak positions 2theta and omega unambiguously identify the corundum C(110) and monoclinic M(31-1) phases and report local lattice spacing and tilt.
    Used throughout Section 2 to convert 2theta and omega center-of-mass maps into phase and strain images.
  • domain assumption Ga irradiation lowers the MIT critical temperature in V2O3, as established in ref [32].
    Invoked to explain why the irradiated region becomes more conductive near Tc; it is an input from prior work, not measured in this paper.
  • domain assumption The Ga ion dose profile is Gaussian, so the center of the irradiated region has the highest dose and the threshold-irradiated width scales with energy.
    Used in Section 2 to explain why the 16 kV tilted region is wider than the 8 kV one; no direct dose profile measurement is provided.
  • domain assumption The tilt mismatch between irradiated and pristine regions produces mechanical strain that suppresses the MIT, consistent with prior self-strain reports in V2O3 (refs 35-37).
    This bridges the observed omega slope and the 2theta suppression in Fig. 4; it is adopted from the literature rather than derived from stress measurements in these devices.
  • domain assumption Each temperature map represents a quasi-equilibrium state of the device during a single warming cycle.
    The paper notes a single temperature cycle; if thermal history created metastable tilt retention, the strain interpretation would be weakened. See Section 2.

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Pith. "Pith review of Self-strain suppression of the metal-to-insulator transition in phase-change oxide devices." pith.science (2026). https://pith.science/paper/F7V2EMDS

@misc{pith2026250800347,
  author       = {Pith},
  title        = {Pith review of: Self-strain suppression of the metal-to-insulator transition in phase-change oxide devices},
  year         = {2026},
  howpublished = {\url{https://pith.science/paper/F7V2EMDS}},
  note         = {Machine review of arXiv:2508.00347}
}
abstract

Quantum materials exhibiting phase transitions which can be controlled through external stimuli, such as electric fields, are promising for future computing technologies beyond conventional semiconductor transistors. Devices that take advantage of structural phase transitions have inherent built-in memory, reminiscent of synapses and neurons, and are thus natural candidates for neuromorphic computing. Of particular interest are phase-change oxides, which allow for control over the metal-to-insulator transition. Here, we report X-ray nano-diffraction structural imaging of micro-devices fabricated with the archetypal phase-change material vanadium sesquioxide (V$_2$O$_3$). The devices contain a Ga ion-irradiated region where the metal-to-insulator transition critical temperature is lowered, a useful feature for controlling neuron-like spiking behavior. Results show that strain, induced by crystal lattice mismatch between the pristine and irradiated material, leads to a suppression of the metal-to-insulator-transition. Suppression occurs within the irradiated region or along its edges, depending on the defect-distribution and the size of the region. The observed self-straining effect could extend to other phase-change oxides and dominate as device dimensions are reduced and become too small to dissipate strain within the irradiated region. The findings are important for phase engineering in phase-change devices and highlight the necessity to study phase transitions at the nanoscale.

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Works this paper leans on

51 extracted references · 50 canonical work pages

  1. [36]

    Xiang, Z

    X. Xiang, Z. He, J. Rao, Z. Fan, X. Wang, and Y. Chen, Applications of ion beam irradiation in multifunctional oxide thin films: A review, ACS Applied Electronic Ma- terials 3, 1031 (2021)

    work page 2021

  2. [1]

    Introduction Utilizing phase transitions for functional devices is a promising avenue for a variety of novel and energy ef- ficient technologies, such as neuromorphic computing [1, 2], fast memory [3, 4], and optical switches [5]. In the scope of neuron- and synapse-inspired neuromorphic computing, key requirements include integrated memory at the transis...

    work page Pith review arXiv 2025

  3. [2]

    Results and Discussion In this work, three V2O3 micro-devices containing ∼1 µm wide Ga irradiated regions were imaged with X-ray nano- diffraction at various temperatures across the MIT upon warming from T≪Tc, as illustrated in Fig. 1b. Each sub- sequent device was irradiated with a two-fold increase in ion energy over the same area, i.e., the irradiated ...

    work page

  4. [3]

    Conclusion In conclusion, temperature dependent nanoscale struc- tural imaging of V 2O3 devices containing irradiated re- gions showed self-straining at the regions’ border. The strain is due to in-plane tilt mismatch between the metal- lic and insulating phases of V 2O3 at temperatures near the metal-to-insulator transition (MIT) critical temper- ature T...

    work page

  5. [4]

    Experimental Section Sample Preparation: 33-nm thick V 2O3 films were grown on (1 1 -2 0)-oriented A-cut Al 2O3 substrates via RF magnetron sputtering using a V 2O3 target in a 7.9 mTorr Ar atmosphere and at 660 ◦C substrate temperature. After the growth, the samples were ther- mally quenched at a rate of ∼90 ◦C min −1 to help preserve the correct oxygen ...

    work page

  6. [5]

    M. Liu, H. Y. Hwang, H. Tao, A. C. Strikwerda, K. Fan, G. R. Keiser, A. J. Sternbach, K. G. West, S. Kittiwatanakul, J. Lu, et al., Terahertz-field-induced insulator-to-metal transition in vanadium dioxide meta- material, Nature 487, 345 (2012)

    work page 2012

  7. [6]

    Markovi´ c, A

    D. Markovi´ c, A. Mizrahi, D. Querlioz, and J. Grollier, Physics for neuromorphic computing, Nature Reviews Physics 2, 499 (2020)

    2020

  8. [7]

    Zhang and G

    S. Zhang and G. Galli, Understanding the metal-to- insulator transition in La 1−xSrx CoO3−δ and its appli- cations for neuromorphic computing, npj Computational Materials 6, 170 (2020)

    work page 2020

Show all 51 references
  1. [8]

    M. Son, J. Lee, J. Park, J. Shin, G. Choi, S. Jung, W. Lee, S. Kim, S. Park, and H. Hwang, Excellent se- lector characteristics of nanoscale VO 2 for high-density bipolar reram applications, IEEE Electron Device Letters 32, 1579 (2011)

    2011

  2. [9]

    J. Park, T. Hadamek, A. B. Posadas, E. Cha, A. A. Demkov, and H. Hwang, Multi-layered NiOy/NbOx/NiOy fast drift-free threshold switch with high ion/ioff ratio for selector application, Scientific reports 7, 4068 (2017)

    2017

  3. [10]

    C. W. Rischau, S. Gariglio, J.-M. Triscone, and J. del Valle, Resistive switching of VO 2 films grown on a thermal insulator, Physical Review Applied 22, 014021 (2024)

    2024

  4. [11]

    McWhan and J

    D. McWhan and J. Remeika, Metal-insulator transition in (V1−xCrx)2O3, Physical Review B 2, 3734 (1970)

    1970

  5. [12]

    Zylbersztejn and N

    A. Zylbersztejn and N. F. Mott, Metal-insulator transi- tion in vanadium dioxide, Physical Review B 11, 4383 (1975)

    1975

  6. [13]

    McWhan, A

    D. McWhan, A. Menth, J. Remeika, W. Brinkman, and T. Rice, Metal-insulator transitions in pure and doped V2O3, Physical Review B 7, 1920 (1973)

    1973

  7. [14]

    Adda, M.-H

    C. Adda, M.-H. Lee, Y. Kalcheim, P. Salev, R. Rocco, N. M. Vargas, N. Ghazikhanian, C.-P. Li, G. Albright, M. Rozenberg, et al., Direct observation of the electri- cally triggered insulator-metal transition in V 3O5 far be- low the transition temperature, Physical Review X 12,...

    2022

  8. [15]

    Lengsdorf, M

    R. Lengsdorf, M. Ait-Tahar, S. Saxena, M. Ellerby, D. Khomskii, H. Micklitz, T. Lorenz, and M. Abd- Elmeguid, Pressure-induced insulating state in (La,Sr)CoO3, Physical Review B 69, 140403 (2004)

    2004

  9. [16]

    Salev, E

    P. Salev, E. Kisiel, D. Sasaki, B. Gunn, W. He, M. Feng, J. Li, N. Tamura, I. Poudyal, Z. Islam, et al., Local 7 strain inhomogeneities during electrical triggering of a metal–insulator transition revealed by X-ray microscopy, Proceedings of the National Academy of Sciences 12...

    2024

  10. [17]

    Salev, L

    P. Salev, L. Fratino, D. Sasaki, R. Berkoun, J. Del Valle, Y. Kalcheim, Y. Takamura, M. Rozenberg, and I. K. Schuller, Transverse barrier formation by electrical trig- gering of a metal-to-insulator transition, Nature commu- nications 12, 5499 (2021)

    2021

  11. [18]

    T.-Y. Chen, D. Y. Sasaki, B. Achinuq, N. Ghazikhanian, P. Salev, H. Ohldag, A. Scholl, I. K. Schuller, Y. Taka- mura, and A. D. Kent, Voltage-induced magnetic domain evolution in a phase-change material, Applied Physics Letters 125 (2024)

    2024

  12. [19]

    T.-Y. Chen, H. Ren, N. Ghazikhanian, R. E. Hage, D. Y. Sasaki, P. Salev, Y. Takamura, I. K. Schuller, and A. D. Kent, Electrical control of magnetic resonance in phase change materials, Nano Letters 24, 11476 (2024)

    2024

  13. [20]

    oriented sapphire, the dominant source of strain is at the interface between irradiated and pristine region. Global suppression of the MIT was observed in V 2O3 as a consequence of strain induced by interaction with the substrate, which depends on substrate orientation [35], c...

  14. [21]

    M. D. Pickett, G. Medeiros-Ribeiro, and R. S. Williams, A scalable neuristor built with mott memristors, Nature materials 12, 114 (2013)

    2013

  15. [22]

    Gao, P.-Y

    L. Gao, P.-Y. Chen, and S. Yu, NbOx based oscillation neuron for neuromorphic computing, Applied physics let- ters 111 (2017)

    2017

  16. [23]

    J. Shi, S. D. Ha, Y. Zhou, F. Schoofs, and S. Ra- manathan, A correlated nickelate synaptic transistor, Na- ture communications 4, 2676 (2013)

    2013

  17. [24]

    S. D. Ha, U. Vetter, J. Shi, and S. Ramanathan, Electro- static gating of metallic and insulating phases in SmNiO3 ultrathin films, Applied Physics Letters 102 (2013)

    2013

  18. [25]

    C. W. Rischau, P. Torruella, C.-Y. Hsu, S. Gariglio, D. T. Alexander, J.-M. Triscone, and J. del Valle, Synaptic and neuronal functionalities on a single oxide film via inter- face engineering, Physical Review Applied 23, 024051 (2025)

    2025

  19. [26]

    Sawa, Resistive switching in transition metal oxides, Materials today 11, 28 (2008)

    A. Sawa, Resistive switching in transition metal oxides, Materials today 11, 28 (2008)

    2008

  20. [27]

    Y. Li, Z. Wang, R. Midya, Q. Xia, and J. J. Yang, Review of memristor devices in neuromorphic computing: mate- rials sciences and device challenges, Journal of Physics D: Applied Physics 51, 503002 (2018)

    2018

  21. [28]

    Luibrand, A

    T. Luibrand, A. Bercher, R. Rocco, F. Tahouni-Bonab, L. Varbaro, C. W. Rischau, C. Dom ´ ınguez, Y. Zhou, W. Luo, S. Bag, et al., Characteristic length scales of the electrically induced insulator-to-metal transition, Physi- cal Review Research 5, 013108 (2023)

    2023

  22. [29]

    Duchene, M

    J. Duchene, M. Terraillon, P. Pailly, and G. Adam, Fil- amentary conduction in VO 2 coplanar thin-film devices, Applied Physics Letters 19, 115 (1971)

    1971

  23. [30]

    A. G. Shabalin, J. Del Valle, N. Hua, M. J. Cherukara, M. V. Holt, I. K. Schuller, and O. G. Shpyrko, Nanoscale imaging and control of volatile and non-volatile resistive switching in VO2, Small 16, 2005439 (2020)

    2020

  24. [31]

    Del Valle, J

    J. Del Valle, J. G. Ram ´ ırez, M. J. Rozenberg, and I. K. Schuller, Challenges in materials and devices for resistive-switching-based neuromorphic computing, Jour- nal of Applied Physics 124 (2018)

    2018

  25. [32]

    del Valle, Y

    J. del Valle, Y. Kalcheim, J. Trastoy, A. Charnukha, D. N. Basov, and I. K. Schuller, Electrically induced multiple metal-insulator transitions in oxide nanodevices, Physical Review Applied 8, 054041 (2017)

    2017

  26. [33]

    Cheng, M.-H

    S. Cheng, M.-H. Lee, R. Tran, Y. Shi, X. Li, H. Navarro, C. Adda, Q. Meng, L.-Q. Chen, R. Dynes, et al., Inherent stochasticity during insulator–metal transition in VO 2, Proceedings of the National Academy of Sciences 118, e2105895118 (2021)

    2021

  27. [34]

    P. Hu, P. Hu, T. D. Vu, M. Li, S. Wang, Y. Ke, X. Zeng, L. Mai, and Y. Long, Vanadium oxide: phase diagrams, structures, synthesis, and applications, Chemical Re- views 123, 4353 (2023)

    2023

  28. [35]

    X. Wu, F. Lai, L. Lin, Y. Li, L. Lin, Y. Qu, and Z. Huang, Influence of thermal cycling on structural, optical and electrical properties of vanadium oxide thin films, Ap- plied Surface Science 255, 2840 (2008)

    2008

  29. [37]

    Ghazikhanian, J

    N. Ghazikhanian, J. del Valle, P. Salev, R. El Hage, Y. Kalcheim, C. Adda, and I. K. Schuller, Resistive switching localization by selective focused ion beam ir- radiation, Applied Physics Letters 123 (2023)

    2023

  30. [38]

    Hofs¨ ass, P

    H. Hofs¨ ass, P. Ehrhardt, H.-G. Gehrke, M. Broetzmann, U. Vetter, K. Zhang, J. Krauser, C. Trautmann, C. Ko, and S. Ramanathan, Tuning the conductivity of vana- dium dioxide films on silicon by swift heavy ion irradia- tion, AIP Advances 1 (2011)

    2011

  31. [39]

    Dernier and M

    P. Dernier and M. Marezio, Crystal structure of the low- temperature antiferromagnetic phase of V 2O3, Physical Review B 2, 3771 (1970)

    1970

  32. [40]

    Kalcheim, C

    Y. Kalcheim, C. Adda, P. Salev, M.-H. Lee, N. Ghazikha- nian, N. M. Vargas, J. Del Valle, and I. K. Schuller, Struc- tural manipulation of phase transitions by self-induced strain in geometrically confined thin films, Advanced Functional Materials 30, 2005939 (2020)

    2020

  33. [41]

    Z. Shao, A. Luo, E. Barazani, T. Zhou, Z. Cai, M. V. Holt, Y. Kalcheim, and A. Singer, X-ray nanoimaging of a heterogeneous structural phase transition in V 2O3, Nano Letters (2025)

    2025

  34. [42]

    Y. Zhu, Z. Cai, P. Chen, Q. Zhang, M. J. Highland, I. W. Jung, D. A. Walko, E. M. Dufresne, J. Jeong, M. G. Samant, et al., Mesoscopic structural phase pro- gression in photo-excited VO 2 revealed by time-resolved X-ray diffraction microscopy, Scientific Reports 6, 21999 (2016)

    2016

  35. [43]

    D. Lee, J. Lee, K. Song, F. Xue, S.-Y. Choi, Y. Ma, J. Podkaminer, D. Liu, S.-C. Liu, B. Chung, W. Fan, S. J. Cho, W. Zhou, J. Lee, L.-Q. Chen, S. H. Oh, Z. Ma, and C.-B. Eom, Sharpened VO2 phase transition via con- trolled release of epitaxial strain, Nano letters 17, 5614 (2017)

    2017

  36. [44]

    Z. Yu, Y. Liu, Z. Zhang, M. Cheng, Z. Zou, Z. Lu, D. Wang, J. Shi, and R. Xiong, Controllable phase transition temperature by regulating interfacial strain of epitaxial VO 2 films, Ceramics International 46, 12393 (2020)

    2020

  37. [45]

    Hsieh, M

    W.-P. Hsieh, M. Trigo, D. A. Reis, G. Andrea Artioli, L. Malavasi, and W. L. Mao, Evidence for photo-induced monoclinic metallic VO 2 under high pressure, Applied Physics Letters 104 (2014)

    2014

  38. [46]

    M. G. Masteghin, T. Gervais, S. K. Clowes, D. C. Cox, V. Zelyk, A. Pattammattel, Y. S. Chu, N. Kolev, T. J. Stock, N. J. Curson, et al., Benchmarking of X-ray flu- orescence microscopy with ion beam implanted samples 8 showing detection sensitivity of hundreds of atoms, Small ...

    2024

  39. [47]

    D’Anna, D

    N. D’Anna, D. Ferreira Sanchez, G. Matmon, J. Bragg, P. C. Constantinou, T. J. Stock, S. Fearn, S. R. Schofield, N. J. Curson, M. Bartkowiak, Y. Soh, D. Grolimund, S. Gerber, and G. Aeppli, Non-destructive X-ray imag- ing of patterned delta-layer devices in silicon, Advanced E...

    2023

  40. [48]

    M. E. Barber, E. Y. Ma, and Z.-X. Shen, Microwave impedance microscopy and its application to quantum materials, Nature Reviews Physics 4, 61 (2022)

    2022

  41. [49]

    Trastoy, Y

    J. Trastoy, Y. Kalcheim, J. Del Valle, I. Valmianski, and I. K. Schuller, Enhanced metal–insulator transition in V2O3 by thermal quenching after growth, Journal of ma- terials science 53, 9131 (2018)

    2018

  42. [50]

    S. J. Leake, G. A. Chahine, H. Djazouli, T. Zhou, C. Richter, J. Hilhorst, L. Petit, M.-I. Richard, C. Morawe, R. Barrett, et al., The nanodiffraction beam- line ID01/ESRF: a microscope for imaging strain and structure, Synchrotron Radiation 26, 571 (2019)

    2019

  43. [51]

    D’Anna, N

    N. D’Anna, N. Ghazikhanian, E. Lamb, A. Thorshov, and A. Wan, Investigation of current voltage charac- teristics of irradiated vanadium dioxide (VO 2) [dataset] https://doi.org/10.15151/ESRF-ES-1436197389 (2027)

    2027 doi

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