REVIEW
High-order topological insulators from high-dimensional Chern insulators
Not yet reviewed by Pith; the record is open.
This paper has not been read by Pith yet. Machine review is queued; the pith claim, tier, and objections will appear here once it completes.
SPECIMEN: schema-true, not a live event
T0 review · schema-true
One-sentence machine reading of the paper's core claim.
pith:XXXXXXXX · record.json · timestamp
read the original abstract
Topological insulators are a novel state of matter that share a common feature: their spectral bands are associated with a nonlocal integer-valued index, commonly manifesting through quantized bulk phenomena and robust boundary effects. In this work, we demonstrate using dimensional reduction that high-order topological insulators are descendants from a chiral semimetal in higher dimensions. Specifically, we analyze the descendants of an ancestor four-dimensional Chern insulator in the limit where it becomes chiral and show their relation to two-dimensional second-order topological insulators. Correspondingly, the quantization of the charge accumulation at the corners of the 2D descendants is obtained and related to the topological indices -- the 1st and 2nd Chern numbers -- of the ancestor model. Our approach provides a connection between the boundary states of high-order topological insulators and topological pumps -- the latter being dynamical realizations of high-dimensional Chern insulators.
Discussion (0). Continue with ORCID to comment.