Temperature and Magnetic-Field Dependence of Energy Relaxation in a Fluxonium Qubit

Noise from material defects at device interfaces is known to limit the coherence of superconducting circuits, yet our understanding of the defect origins and noise mechanisms remains incomplete. Here we investigate the temperature and in-plane magnetic-field dependence of energy relaxation in a low-frequency fluxonium qubit, where the sensitivity to flux noise and charge noise arising from dielectric loss can be tuned by applied flux. We observe an approximately linear scaling of flux noise with temperature $T$ and a power-law dependence of dielectric loss $T^3$ up to 100 mK. Additionally, we find that the dielectric-loss-limited $T_1$ decreases with weak in-plane magnetic fields, suggesting a potential magnetic-field response of the underlying charge-coupled defects. We implement a multi-level decoherence model in our analysis, motivated by the widely tunable matrix elements and transition energies approaching the thermal energy scale in our system. These findings offer insight for fluxonium coherence modeling and should inform microscopic theories of intrinsic noise in superconducting circuits.