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Atomistic theory of spin relaxation in self-assembled In_(1-x)Ga_xAs/GaAs quantum dots at zero magnetic field

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arxiv 1011.4724 v1 pith:I7EOD6BI submitted 2010-11-22 cond-mat.mtrl-sci quant-ph

Atomistic theory of spin relaxation in self-assembled In$_{1-x}$Ga$_x$As/GaAs quantum dots at zero magnetic field

classification cond-mat.mtrl-sci quant-ph
keywords relaxationdotsfieldquantummagneticprocessself-assembledspin
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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abstract

We present full atomistic calculations of the spin-flip time (T$_{1}$) of electrons and holes mediated by acoustic phonons in self-assembled In$_{1-x}$Ga$_x$As/GaAs quantum dots at zero magnetic field. At low magnetic field, the first-order process is suppressed, and the second-order process becomes dominant. We find that the spin-phonon-interaction induced spin relaxation time is 40 - 80 s for electrons, and 1 - 20 ms for holes at 4.2 K. The calculated hole-spin relaxation times are in good agreement with recent experiments, which suggests that the two-phonon process is the main relaxation mechanism for hole-spin relaxation in the self-assembled quantum dots at zero field. We further clarify the structural and alloy composition effects on the spin relaxation in the quantum dots.

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