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Moir\'e quantum well states in tiny angle two dimensional semi-conductors
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Moir\'e quantum well states in tiny angle two dimensional semi-conductors
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The valence band edge in tiny angle twist bilayers of MoS$_2$ and phosphorene is shown to consist of highly localized energy levels created by a `moir\'e quantum well', i.e. trapped by the interlayer moir\'e potential. These approximately uniformly spaced energy levels exhibit a richly modulated charge density, becoming ultra-localized at the valence band maximum. The number and spacing of such levels is controllable by the twist angle and interlayer interaction strength, suggesting the possibility of `moir\'e engineering' ordered arrays of quantum dots in 2d twist semi-conductors.
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Cited by 1 Pith paper
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Interaction effects and superconductivity signatures in twisted double-bilayer WSe$_2$
Transport data show correlated insulators and superconductivity signatures up to 6 K in p-type twisted double-bilayer WSe2 across twist angles 1-4 degrees with no single magic angle.
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