GHz Operation of Nanometer-Scale Metallic Memristors: Highly Transparent Conductance Channels in Ag$_{2}$S Devices

A. Geresdi; A. Gubicza; A. Halbritter; G. Mih\'aly; M. Csontos

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arxiv 1310.4964 v1 pith:JCYIVEC4 submitted 2013-10-18 cond-mat.mes-hall

GHz Operation of Nanometer-Scale Metallic Memristors: Highly Transparent Conductance Channels in Ag₂S Devices

A. Geresdi , M. Csontos , A. Gubicza , A. Halbritter , G. Mih\'aly This is my paper

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keywords metallicnanometer-scalechannelshighlyjunctionsmemristiveoperationscale

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The nonlinear transport properties of nanometer-scale junctions formed between an inert metallic tip and an Ag film covered by a thin Ag$_{2}$S layer are investigated. Suitably prepared samples exhibit memristive behavior with technologically optimal ON and OFF state resistances yielding to resistive switching on the nanosecond time scale. Utilizing point contact Andreev reflection spectroscopy we studied the nature of electron transport in the active volume of the memristive junctions showing that both the ON and OFF states correspond to truly nanometer scale, highly transparent metallic channels. Our results demonstrate the merits of Ag$_{2}$S nanojunctions as nanometer-scale memory cells with GHz operation frequencies.

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Reconfigurable multiplier architecture based on memristor-cmos with higher flexibility
cs.AR 2019-07 unverdicted novelty 4.0

A memristor-CMOS reconfigurable multiplier is introduced to enable flexible bit-width operations with reduced area via SPICE simulations on 180-nm CMOS.