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Quantum geometry and dipolar dynamics in the orbital magneto-electric effect

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arxiv 2505.02911 v2 pith:JRPDNY2M submitted 2025-05-05 cond-mat.mes-hall

Quantum geometry and dipolar dynamics in the orbital magneto-electric effect

classification cond-mat.mes-hall
keywords orbitalquantumdipoleeffectmagneto-electricmetricangularcase
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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We show that the orbital magneto-electric effect (OME) -- the generation of a steady-state orbital angular momentum density -- is partly the result of a nonequilibrium dipole moment generated via Zitterbewegung and proportional to the quantum metric. For tilted massive Dirac fermions this dipole gives the only contribution to the OME in the insulating case, while the intrinsic and extrinsic OMEs occur for different electric field orientations, yielding an experimental detection method. Our results suggest quantum metric engineering as a route towards maximizing orbital torques.

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Cited by 3 Pith papers

Reviewed papers in the Pith corpus that reference this work. Sorted by Pith novelty score.

  1. Geometry-Driven Nonlinear Orbital Magnetoelectric Effect

    cond-mat.mes-hall 2026-05 unverdicted novelty 7.0

    A nonlinear orbital magnetoelectric effect is derived for centrosymmetric materials via extended semiclassical theory, separating intrinsic and extrinsic parts with distinct relaxation-time scalings and reduced symmet...

  2. Inter-band coherence effects in disordered crystals: beyond the non-crossing approximation

    cond-mat.mes-hall 2026-06 unverdicted novelty 6.0

    Extends density-matrix kinetic theory beyond non-crossing approximation to fourth-order disorder, yielding extrinsic tau^0 contributions to anomalous Hall conductivity in the 2D Dirac model.

  3. Orbital Hall effect in spin-3/2 hole-doped semiconductors and its implications for orbitronics

    cond-mat.mes-hall 2025-09 conditional novelty 6.0

    Holes in p-type Ge show an orbital Hall conductivity roughly 6000 times its spin Hall conductivity, positioning Ge as a strong orbitronic material.