Unexpected Tuning of the Anomalous Hall Effect in Altermagnetic MnTe Thin Films
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The discovery of an anomalous Hall effect (AHE) sensitive to the magnetic state of antiferromagnets can trigger a new era of spintronics, if materials that host a tunable and strong AHE are identified. Altermagnets are a new class of materials that can under certain conditions manifest a strong AHE, without having a net magnetization. But the ability to control their AHE is still lacking. In this study, we demonstrate that the AHE in altermagnetic {\alpha}-MnTe grown on GaAs(111) substrates can be "written on-demand" by cooling the material under an in-plane magnetic field. The magnetic field controls the strength and the coercivity of the AHE. Remarkably, this control is unique to {\alpha}-MnTe grown on GaAs and is absent in {\alpha}-MnTe grown on SrF2. The tunability that we reveal challenges our current understanding of the symmetry-allowed AHE in this material and opens new possibilities for the design of altermagnetic spintronic devices.
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Cited by 2 Pith papers
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Observation of the Optical Phonons in {\alpha}-MnTe films
MBE-grown alpha-MnTe films on GaAs(111)B exhibit Raman modes at 121 and 140 cm-1 identified as all symmetry-allowed optical phonons of the hexagonal NiAs lattice via experiment and DFT calculations.
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Imaging Surface Magnetization in Altermagnetic MnTe Films
Nanoscale imaging of epitaxial MnTe films reveals interfacial-origin weak magnetization that correlates with the anomalous Hall effect and can be controlled by external fields.
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