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Low-temperature ballistic transport in nanoscale epitaxial graphene cross junctions
classification
cond-mat.mes-hall
cond-mat.mtrl-scicond-mat.other
keywords
transportballisticcrossepitaxialgraphenejunctionsnanoscaleabove
read the original abstract
We report on the observation of inertial-ballistic transport in nanoscale cross junctions fabricated from epitaxial graphene grown on SiC(0001). Ballistic transport is indicated by a negative bend resistance of R12,43 ~ 170 ohm which is measured in a non-local, four-terminal configuration at 4.2 K and which vanishes as the temperature is increased above 80 K.
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