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Dynamic Bandstructure and Capacitance Effects in Scanning Tunneling Spectroscopy of Bilayer Graphene

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arxiv 1909.04280 v2 pith:LILR23LX submitted 2019-09-10 cond-mat.mtrl-sci cond-mat.mes-hall

Dynamic Bandstructure and Capacitance Effects in Scanning Tunneling Spectroscopy of Bilayer Graphene

Gregory R. Holdman , Zachary J. Krebs , Wyatt A. Behn , Keenan J. Smith , K. Watanabe , T. Taniguchi , Victor W. Brar This is my paper
classification cond-mat.mtrl-sci cond-mat.mes-hall
keywords effectsgraphenemeasurementstdostunnelingappearsbandstructurebilayer
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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We develop a fully self-consistent model to describe scanning tunneling spectroscopy (STS) measurements of Bernal-stacked bilayer graphene (BLG), and we compare the results of our model to experimental measurements. Our results show that the STS tip acts as a top gate that changes the BLG bandstructure and Fermi level, while simultaneously probing the voltage-dependent tunneling density of states (TDOS). These effects lead to differences between the TDOS and the local density of states (LDOS); in particular, we show that the bandgap of the BLG appears larger than expected in STS measurements, that an additional feature appears in the TDOS that is an artifact of the STS measurement, and that asymmetric charge distribution effects between the individual graphene layers are observable via STS.

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