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Floquet-Volkov interference in a semiconductor

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arxiv 2502.07357 v1 pith:OFOW6NK2 submitted 2025-02-11 cond-mat.mes-hall cond-mat.mtrl-sciphysics.optics

Floquet-Volkov interference in a semiconductor

Changhua Bao , Haoyuan Zhong , Benshu Fan , Xuanxi Cai , Fei Wang , Shaohua Zhou , Tianyun Lin , Hongyun Zhang
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Pu Yu Peizhe Tang Wenhui Duan Shuyun Zhou
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classification cond-mat.mes-hall cond-mat.mtrl-sciphysics.optics
keywords statesfloquet-volkovinterferencelight-fielddressedelectronsfurtherquantum
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Intense light-field can dress both Bloch electrons inside crystals and photo-emitted free electrons in the vacuum, dubbed as Floquet and Volkov states respectively. These quantum states can further interfere coherently, modulating light-field dressed states. Here, we report experimental evidence of the Floquet-Volkov interference in a semiconductor - black phosphorus. A highly asymmetric modulation of the spectral weight is observed for the Floquet-Volkov states, and such asymmetry can be further controlled by rotating the pump polarization. Our work reveals the quantum interference between different light-field dressed electronic states, providing insights for material engineering on the ultrafast timescale.

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