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Novel self-epitaxy for inducing superconductivity in the topological insulator (Bi1-xSbx)2Te3

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arxiv 1910.08331 v2 pith:Q6W7FZDB submitted 2019-10-18 cond-mat.mes-hall cond-mat.mtrl-scicond-mat.str-elcond-mat.supr-con

classification cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elcond-mat.supr-con
keywords superconductingeffectproximitysuperconductortopologicalepitaxialinsulatorself-epitaxy
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abstract

Using the superconducting proximity effect for engineering a topological superconducting state in a topological insulator (TI) is a promising route to realize Majorana fermions. However, epitaxial growth of a superconductor on the TI surface to achieve a good proximity effect has been a challenge. We discovered that simply depositing Pd on thin films of the TI material (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ leads to an epitaxial self-formation of PdTe$_2$ superconductor having the superconducting transition temperature of ~1 K. This self-formed superconductor proximitizes the TI, which is confirmed by the appearance of a supercurrent in Josephson-junction devices made on (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$. This self-epitaxy phenomenon can be conveniently used for fabricating TI-based superconducting nanodevices to address the superconducting proximity effect in TIs.

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