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Electric-field control of tunneling magnetoresistance effect in a Ni/InAs/Ni quantum-dot spin valve

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arxiv 0706.0373 v2 pith:QFZ6LNOE submitted 2007-06-04 cond-mat.mes-hall cond-mat.mtrl-sci

Electric-field control of tunneling magnetoresistance effect in a Ni/InAs/Ni quantum-dot spin valve

K. Hamaya , M. Kitabatake , K. Shibata , M. Jung , M. Kawamura , K. Hirakawa , T. Machida , S. Ishida
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Y. Arakawa
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classification cond-mat.mes-hall cond-mat.mtrl-sci
keywords effectblockadecontrolcoulombelectric-fieldmagnetoresistancequantum-dotsign
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We demonstrate an electric-field control of tunneling magnetoresistance (TMR) effect in a semiconductor quantum-dot (QD) spin-valve device. By using ferromagnetic Ni nano-gap electrodes, we observe the Coulomb blockade oscillations at a small bias voltage. In the vicinity of the Coulomb blockade peak, the TMR effect is significantly modulated and even its sign is switched by changing the gate voltage, where the sign of the TMR value changes at the resonant condition.

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