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NV with nitrogen

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arxiv 2311.09570 v1 pith:RKGAUY4D submitted 2023-11-16 cond-mat.mtrl-sci

N.B.Manson , M.S.J.Barson , M.Hedges , P.Singh , S.Stearn , Y.Chen , L.Oberg , C.A.Meriles
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M.W.Doherty
This is my paper · ORCID
classification cond-mat.mtrl-sci
keywords nitrogenchargepropertiessingletransferadjacentatombulk
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The paper highlights the difference the properties the nitrogen vacancy centre in bulk diamond containing nitrogen compared to the properties of single centres. Charge transfer between the negative and neutral charge state can occur with a tunnelling of an electron from an adjacent nitrogen atom without involving conduction or valence electrons. This contrasts with charge transfer of single sites. There are other differences for example with the intersystem crossing.

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Cited by 1 Pith paper

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  1. Diamond-defect engineering of NV- centers using ion beam irradiation

    cond-mat.mtrl-sci 2024-12 conditional novelty 4.0 of 10

    MeV H+ and Br+6 irradiation of nitrogen-doped diamond followed by annealing produces NV- centers, with an optimal vacancy density near 1e19 cm-3 yielding an estimated 10 ppm NV-.

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