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Insulator-to-Metal Transition via Magnetic Reconstruction at Oxide Interfaces

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arxiv 2503.21093 v1 pith:S6K2URSP submitted 2025-03-27 cond-mat.mes-hall cond-mat.mtrl-scicond-mat.str-el

Insulator-to-Metal Transition via Magnetic Reconstruction at Oxide Interfaces

classification cond-mat.mes-hall cond-mat.mtrl-scicond-mat.str-el
keywords magneticemergentlayerstransitionultrathinantiferromagneticelectronicfindings
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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Ultrathin two-dimensional (2D) electronic systems at the interfaces of layered materials are highly desirable platforms for exploring of novel quantum phenomena and developing advanced device applications. Here, we investigate ultrathin heterostructures composed of SrIrO3 (SIO) and SrRuO3 (SRO) layers to uncover their emergent properties. Strikingly, despite the fact that both individual layers are antiferromagnetic insulators, the interfaced heterostructure exhibits emergent metallicity. Through transport measurements, magnetic characterization, and angle-resolved photoemission spectroscopy (ARPES), we analyze the underlying mechanisms governing this insulator-to-metal transition. Our findings reveal that the transition is driven by interface-induced magnetic reconstruction, which is further corroborated by density functional theory (DFT) calculations. The staggered Dzyaloshinskii-Moriya interaction at the SIO/SRO interface is identified as the key driving force for this spin reorganization, as it stabilizes ferromagnetism in the coupled antiferromagnetic insulating layers. These findings highlight the significant potential of engineering interfacial magnetic interactions as a powerful approach to generate and control emergent electronic properties, paving the way for novel functionalities that are unattainable in individual ultrathin films.

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