Pith. sign in

REVIEW 3 major objections 5 minor 45 references

Epitaxial SiGeSn alloys for CMOS-compatible thermoelectric devices

T0 review · 3 major / 5 minor · reviewed 2026-08-05 · deepseek-v4-flash

Challenge this review Re-run · record.json Download PDF Read on arXiv ↗ Review JSON

Pith's one-line read Ge-rich SiGeSn alloys are predicted to reach thermoelectric figures of merit above 1 near room temperature, making them credible CMOS-compatible substitutes for Bi2Te3 and PbTe.

desk verdict A credible computational screen with real 3-omega input, but the ZT>1 peak for SiGeSn rides on a single extrapolated thermal-conductivity fit and the abstract overstates the p-type 300 K case. read the letter →

arxiv 2608.03638 v1 pith:WUCV6AQU submitted 2026-08-04 cond-mat.mtrl-sci physics.comp-ph

Patrizio Graziosi , Damiano Marian , Andrea Tomadin , Stefano Roddaro , Omar Concepción , Johnny Tiscareño-Ramírez , Agnieszka Anna Corley-Wiciak , Dan Buca
show 2 more authors
Giovanni Capellini Michele Virgilio
This is my paper · ORCID
classification cond-mat.mtrl-sciphysics.comp-ph
keywords SiGeSnthermoelectricfigureofmeritlatticethermalconductivityBoltzmanntransportmultivalleyCMOS-compatiblethermoelectrics3-omegamethodgroup-IValloys
verification ladder T0 review T1 audit T2 compute T3 formal

The pith

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The reading

This paper argues that Ge-rich SiGeSn ternary alloys—materials already grown on silicon wafers with industry-compatible epitaxy—can combine low thermal conductivity with efficient electrical transport, yielding thermoelectric performance at 300–400 K that rivals conventional toxic and non-CMOS materials. Combining 3-omega measurements of lattice thermal conductivity with full-band Boltzmann transport simulations, it predicts n-type ZT peaks of 1.2 at 300 K and 1.6 at 400 K, and p-type peaks of 0.7 at 300 K and 1.3 at 400 K. The central mechanism is that co-alloying Ge with Si and Sn suppresses the lattice thermal conductivity far more strongly than adding Sn alone, while the multivalley conduction band keeps electron transport efficient. If the predictions hold, SiGeSn could bring thermoelectric cooling and energy harvesting directly into mainstream silicon microelectronics.

What carries the argument

The load-bearing object is the composition-dependent lattice thermal conductivity captured by the inverse-sum formula Eq. (2), with a ternary fitting parameter A_SiGeSn = 0.016 W/m·K. Because ZT is inversely proportional to total thermal conductivity and the electronic contribution κ_e stays small (roughly 0.1–1.8 W/m·K), the spatial trend of ZT across the composition map is controlled by κ_l. On the electronic side, the multivalley conduction band with Γc, L and Δ minima within roughly 100–200 meV is the crucial feature: Sn incorporation lowers the light-mass Γ valley, raising electron mobility despite increased alloy scattering. ElecTra supplies full-band, energy- and momentum-dependent sc

What would settle it

Directly measure the lattice thermal conductivity of an epitaxial Si0.3Ge0.54Sn0.16 layer on Ge at 300–400 K using 3-omega or Raman thermometry, together with Hall mobility and Seebeck coefficient at the predicted optimal doping (n ≈ 5–7×10^19 cm^-3). If the measured κ_l exceeds about 0.6 W/m·K, the predicted ZT drops below 1; if the measured mobility is well below the ElecTra prediction, the power-factor claim fails.

Watch

Extended reading notes

Core claim

The central claim is that optimally doped epitaxial SixGe1−x−ySny is a high-performance room-temperature thermoelectric: in n-type material the predicted ZT peaks at 1.2 at 300 K and 1.6 at 400 K, with p-type values of 0.7 and 1.3 at the same temperatures, at carrier densities that have already been demonstrated experimentally. The authors establish this by merging their own 3-omega lattice-thermal-conductivity measurements on SiGeSn/Ge/Si layers with ElecTra, a full-band Boltzmann transport solver that includes intervalley scattering and bipolar effects. A phenomenological formula, Eq. (2), fitted to 3-omega data and molecular-dynamics points, predicts a minimum lattice thermal conductivity

Load-bearing premise

Everything hinges on the fitted thermal-conductivity formula being valid at the peak composition Si0.3Ge0.54Sn0.16, where no direct 3-omega measurement exists and the formula predicts 0.28 W/m·K, roughly a factor of two below the measured ternary samples; if the true lattice conductivity there is much higher, the headline figure of merit falls below 1.

Editorial extensions

If this is right

  • At the predicted peak composition, n-type SiGeSn reaches ZT = 1.2 at 300 K and 1.6 at 400 K, matching or exceeding Bi2Te3-class materials while remaining CMOS-compatible and non-toxic.
  • p-type SiGeSn reaches ZT = 0.7 at 300 K and 1.3 at 400 K, providing a complementary leg for thermoelectric coolers and generators.
  • The optimal n-type doping densities, roughly 5–7×10^19 cm^-3, have already been demonstrated in epitaxial SiGeSn, so the carrier concentrations the predictions rely on are experimentally accessible.
  • The best-performing compositions are close to lattice matching with Ge buffers (Si:Sn ratio 3.67), meaning devices could be grown on standard Ge/Si virtual substrates without additional strain engineering.
  • Predicted power factors near 20 μW/cm·K² are competitive with established room-temperature thermoelectric materials without requiring nanoscale energy-filtering structures.

Reading between the lines

Editorial extensions of the paper, not claims the author makes directly.

  • Because the same band-structure lever that lowers the Γ valley also responds to tensile strain, strain engineering beyond the lattice-matched condition could plausibly push the n-type ZT peak still higher; the paper does not explore that route.
  • If the predicted lattice conductivity near 0.28 W/m·K holds, SiGeSn could also serve for on-chip Peltier hotspot cooling, since ZT above 1 at 300–400 K is the regime where local cooling becomes practical, not just waste-heat generation.
  • The bowl-shaped κ_l map suggests that graded Si:Sn compositions during epitaxy could act as phonon barriers, enabling phononic device concepts without top-down nanostructuring; this is an extension of the paper's trend maps, not one of its claims.
Share X Bluesky LinkedIn Reddit HN

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, and a circularity audit.

Referee Report

3 major / 5 minor

Summary. The manuscript estimates the thermoelectric figure of merit ZT of epitaxial SiGeSn alloys at 300-400 K by combining 3-omega measurements of lattice thermal conductivity with full-band Boltzmann transport simulations (ElecTra). A phenomenological expression, Eq. (2), is fitted to 3-omega and molecular-dynamics data and used to predict kappa_l across the composition range x<=0.3, y<=0.16. The electronic transport model includes intervalley scattering, alloy disorder, and bipolar effects, and is calibrated against GeSn mobility data. The central claim is that n-type SiGeSn reaches ZT=1.2 at 300 K and 1.6 at 400 K, and p-type reaches ZT=0.7 at 300 K and 1.3 at 400 K at optimal doping, with power factors around 20 microW/cm K^2. These values are presented as competitive with commercial thermoelectric materials while maintaining CMOS compatibility.

Significance. If the predictions are correct, the paper identifies a CMOS-compatible, non-toxic group-IV material that could operate near room temperature, which would be a meaningful step beyond SiGe (which requires ~1200 K) and would address the integration and toxicity limitations of Bi2Te3 and PbTe. The strengths of the work include the use of state-of-the-art full-band BTE transport with explicit intervalley scattering, calibration against a dedicated set of GeSn Hall mobility data, and the combination of experimental thermal conductivity with a composition-dependent model. The central ZT numbers, however, rest on a single fitted cross-term parameter A_SiGeSn that is extrapolated far beyond the calibration region, and no uncertainty quantification is provided. Because of this, the headline 'ZT>1' claim is not yet sufficiently supported.

major comments (3)
  1. [Lattice thermal conductivity of SiGeSn, Eq. (2)] The central ZT predictions inherit Eq. (2), and the value A_SiGeSn=0.016 W/mK is fitted to 3-omega data with x in [0.07,0.12] and x+y=0.15, plus MD data on the line x=y. The peak composition Si0.3Ge0.54Sn0.16 lies outside both calibration manifolds. At that point, the xy/A_SiGeSn term contributes about 3.0 of the 3.38 (W/mK)^{-1} total inverse conductivity, i.e., roughly 89% of the predicted kappa_l=0.28 W/mK is set by a single extrapolated constant. The inset agreement with MD is not independent validation because the same MD points were used in the fit. No uncertainty is propagated to ZT. Since ZT ~ 1/(kappa_l+kappa_e), a factor-of-two upward error in kappa_l would bring the p-type 400 K peak and the n-type 300 K peak below unity. A sensitivity analysis with respect to A_SiGeSn, or an independent validation at higher x+y and different x/y, is essential before the claim ZT>1 can be acce
  2. [Methods and validation / Electronic transport properties] The n-type mobility calibration uses a single rescaling factor of 0.7 applied to the GeSn alloy scattering potentials from Ref. [15], tuned to a limited set of GeSn samples with Sn in 5-15%. The extrapolation to the ternary alloy at x=0.3, y=0.16 assumes that the linear decomposition of Ref. [31] remains quantitatively valid when the relative valley populations change strongly. The paper does not report any uncertainty or sensitivity of the electronic transport results to this calibration. While the electronic contribution to ZT is not as dominant as kappa_l, the location of the peak and the quantitative ZT values depend on it; an overestimate of the electron mobility by 20-30% would alter the reported n-type maxima.
  3. [TE performance and discussion, Figs. 3-6] The predicted ZT maxima occur at compositions that do not satisfy the lattice-matching condition to the Ge buffer (which requires x/y=3.67). For example, x=0.3,y=0.16 has x/y=1.875 and will generally be biaxially strained when grown on Ge/Si virtual substrates unless the layer relaxes. The manuscript does not incorporate strain effects on band structure or alloy scattering for such off-lattice-match points. Since the samples are heteroepitaxial and the electronic transport is sensitive to the Gamma-L separation, the omission of strain could materially affect the predicted ZT maps. Please either compute the transport properties for the relevant strain states or justify why strain can be neglected in this composition range.
minor comments (5)
  1. [Abstract / Conclusions] The abstract states that ZT exceeding 1 has been obtained for both p- and n-type material within 300-400 K, but the p-type 300 K value is 0.7 in the main text. Please clarify that the p-type value exceeds 1 only at 400 K.
  2. [TE performance and discussion] In the sentence 'binary GeSn alloy at 0.15% Sn content', the percentage is likely 15%, not 0.15%. Please correct.
  3. [References] Reference [36] is incomplete: it appears to lack the journal name, volume, and page numbers. Other references should be checked for consistency.
  4. [Fig. 2(a)] The caption says empty symbols are experimental, but it is not clear whether both n- and p-type data are Hall measurements and how the 'bulk Ge' value is defined. Please clarify the symbol styles and error bars.
  5. [General] Several typos and stylistic issues appear: 'relyed' should be 'relied', 'TEG generator' is redundant, and 'Green-IT' is inconsistently capitalized. These do not affect the science but should be cleaned up.

Circularity Check

1 steps flagged · score 4.0 of 10

One in-sample validation step is circular, but the central ZT prediction is a model extrapolation, not a reduction to its inputs.

  1. fitted input called prediction [Section 'Lattice thermal conductivity of SiGeSn', Eq. (2) and Fig. 2(b) inset]
    "This value has been obtained simultaneously fitting with Eq. (2) the 3-ω measurements shown in Fig. 2(b) for x+y=0.15 and the κl theoretical estimations provided in Ref. [27] for x=y with x∈[0.1,0.5]... while comparison of Eq. (2) with theoretical MD points from Ref. [27] at x=y is reported in the inset. Beside noticing the effectiveness of the adopted fitting formula..."

    The MD points from Ref. [27] are part of the dataset used to fit A_SiGeSn in Eq. (2). The inset 'comparison' therefore shows the fitted curve evaluated at the same points that determined the fit, so the agreement is forced by the least-squares procedure rather than being an independent test. This in-sample agreement is presented as evidence that Eq. (2) 'describes' the ternary system, which is circular for that validation claim. It does not, however, validate the extrapolation to the ZT-peak composition Si0.3Ge0.54Sn0.16, which lies outside both calibration manifolds.

full rationale

The central ZT calculation is not definitionally circular: ZT = S²σT/(κ_l+κ_e), where κ_l comes from the fitted phenomenological Eq. (2) and the electronic transport (S, σ, κ_e) is obtained from full-band BTE simulations in ElecTra. The electronic-transport side is calibrated to experimental GeSn mobility data with a 0.7 rescaling of alloy-scattering potentials; that is a calibration, not a circular prediction of SiGeSn ZT. The lattice thermal conductivity is a fit to 3-ω and MD data, but the headline ZT values at Si0.3Ge0.54Sn0.16 are an extrapolation, not a restatement of a measured data point. The paper itself acknowledges the domain is chosen to stay near available κ_l data, and the peak sits at the boundary, which is a robustness concern rather than a circular reduction. The one genuine circular step is the in-sample validation of Eq. (2) against the same MD points used in the fit; this is a minor methodological flaw that does not undermine the independent content of the electronic-transport calculation or the extrapolated ZT prediction.

Assumptions & free parameters 4 free parameters · 5 assumptions · 0 invented entities

The central claims rest on three fitted alloy parameters and one rescaling factor; no new physical entities are introduced. The headline ZT at high Si and Sn content is especially sensitive to the fitted A_SiGeSn term, and the high n-type optimal doping is an assumed operating point.

free parameters (4)
  • A_SiGe (Eqs. 1-2) = 2.8 W/mK
    Taken from Ref. [34]; enters the denominator of the kappa_l model and therefore the ZT maps.
  • A_GeSn (Eqs. 1-2) = 0.467 W/mK
    Fitted to GeSn thermal conductivity data from Ref. [25].
  • A_SiGeSn (Eq. 2) = 0.016 W/mK
    Fitted simultaneously to 3-omega SiGeSn data and MD results from Ref. [27]; the xy/A term sets the predicted kappa_l minimum of 0.28 W/mK that drives peak ZT.
  • n-type alloy scattering rescale factor = 0.7
    Applied to conduction-band GeSn alloy potentials from Ref. [15] to match the authors' n-type Hall mobilities; carried into all n-type ZT predictions.
assumptions (5)
  • domain assumption ElecTra's full-band BTE with anisotropic scattering rates correctly describes electronic transport in SiGeSn.
    Invoked in Methods; validated only against GeSn mobility in Fig. 2(a), not against any SiGeSn transport measurement.
  • ad hoc to paper Eq. (2) with fitted A_SiGeSn extrapolates lattice thermal conductivity reliably across x in [0,0.3], y in [0,0.16], including the peak composition.
    The ternary cross-term xy/A_SiGeSn is introduced and fitted in this paper; it dominates the predicted minimum of 0.28 W/mK.
  • domain assumption Ternary alloy scattering matrix elements can be linearly decomposed from binary SiGe and GeSn potentials, with a 0.7 rescale for the conduction band.
    Used in Methods; the rescale is tuned to the authors' GeSn mobility data and may not transfer to all SiGeSn compositions.
  • domain assumption Epitaxial strain does not materially affect the band structure and transport of off-lattice-matched SiGeSn compositions in Figs. 3-5.
    Not explicitly discussed; only the Si:Sn = 3.67 line is lattice matched to the Ge buffer, yet ZT maps cover the full (x,y) domain.
  • domain assumption Active doping densities of 5 to 7 x 10^19 cm^-3 for n-type SiGeSn are experimentally reachable without degrading mobility beyond the modeled Coulomb scattering.
    Used to compute n-type ZT; authors cite Ref. [35] for feasibility, but no SiGeSn transport data at these densities are shown.

how reviews work

0 comments
Cite this review

Pith. "Pith review of Epitaxial SiGeSn alloys for CMOS-compatible thermoelectric devices." pith.science (2026). https://pith.science/paper/WUCV6AQU

@misc{pith2026260803638,
  author       = {Pith},
  title        = {Pith review of: Epitaxial SiGeSn alloys for CMOS-compatible thermoelectric devices},
  year         = {2026},
  howpublished = {\url{https://pith.science/paper/WUCV6AQU}},
  note         = {Machine review of arXiv:2608.03638}
}
abstract

The integration of thermoelectric devices into mainstream microelectronic technological platform could be a major breakthrough in various fields within the \emph{so-called} Green-IT realm. In this article, the thermoelectric properties of heteroepitaxial SiGeSn alloys, a novel CMOS compatible material system, are evaluated to assess their possible application in thermoelectric devices. To this purpose, starting from the experimentally low lattice thermal conductivity of SiGeSn/Ge/Si layers of about $\sim$1-2 W/m$\cdot$K assessed by means of 3-$\omega$ measurements, the figure of merits are calculated through the use of Boltzmann transport equation, taking into account the relevant inter-valley scattering processes, peculiar of this multi-valley material system. Values for the figure of merit $ZT$ exceeding $1$ have been obtained for both p- and n- type material at operating temperatures within the 300---400 K range, i.e. at a typical On-Chip temperatures. In this interval, the predicted power factor also features very competitive values of the order of 20 $\rm{\mu W/cm\cdot K^2}$. Our finding indicates that this new class of Si-based materials has extremely good prospects for real-world applications, and can further stimulate scientific investigation in this ambit.

Figures

Figures reproduced from arXiv: 2608.03638 by the authors.

Figure 1
Figure 1. a) ZT figure of merit as a function of temperature for different semiconductor n-type (left) and p-type (right) materials. b) Left: schematic conduction band structure of a Ge-rich SiGe alloy (blue dashed). Alloying with Sn induces the relative downshift of the Γc band edge (solid curve) with respect to the ∆ and L ones. L, Γc and ∆ point conduction minima are typically found within a 100-200 meV energy range. Right… view at source ↗
Figure 2
Figure 2. a) GeSn electron (blue) and hole (red) mobilities as a function of Sn content, mea [PITH_FULL_IMAGE:figures/full_fig_p009_2.png] view at source ↗
Figure 3
Figure 3. Color map of the ZT figure of merit, predicted for p-type SiGeSn at the optimal carrier concentration at 300 K (a) and 400 K (c). The corresponding hole contribution to the thermal conductivity κh is reported in panel (b) and (d). The black dashed curve in panels (a) and (c) evidences the lattice matching condition with the relaxed Ge buffer material. 13 [PITH_FULL_IMAGE:figures/full_fig_p013_3.png] view at source ↗
Figures from the paper (3 more)
Figure 4
Figure 4. Figure 4: Color map of the ZT figure of merit, predicted for n-type SiGeSn at the optimal carrier concentration at 300 K (a) and 400 K (c). The corresponding electron contribution to the thermal conductivity κe is reported in panels (b) and (d). The black dashed curve in panels …
Figure 5
Figure 5. Figure 5: Color map of the Power Factor PF at 300 K at the optimal carrier density for [PITH_FULL_IMAGE:figures/full_fig_p017_5.png]
Figure 6
Figure 6. Figure 6: (a) ZT and (b) PF at the Si:Sn ratio of 3.67 as a function of the Si content at 300 and 400 K. The data are for p-type (red) and n-type (blue) alloys, as indicated in the legend. we find a ZT peak value at 300 (400) K of 1.2 (1.6), while the corresponding value for the…

Discussion (0). Continue with ORCID to comment.

Reference graph

Works this paper leans on

45 extracted references · 43 canonical work pages

  1. [27]

    ECS Journal of Solid State Science and Technology , volume =

    Advances in In Situ Boron and Phosphorous Doping of SiGeSn , author =. ECS Journal of Solid State Science and Technology , volume =. 2023 , doi =

    work page 2023

  2. [15]

    Advanced Functional Materials , volume =

    Stretchable Thermoelectric Generators for Self-Powered Wearable Health Monitoring , author =. Advanced Functional Materials , volume =. 2024 , doi =

    work page 2024

  3. [31]

    S. N. Khatami and Z. Aksamija , title =. Physical Review Applied , year =

    work page

  4. [1]

    2023 , issn =

    ElecTra code: Full-band electronic transport properties of materials , journal =. 2023 , issn =. doi:https://doi.org/10.1016/j.cpc.2023.108670 , url =

    work page arXiv 2023

  5. [2]

    , title =

    Graziosi, P. , title =. GitHub repository , howpublished =. 2023 , publisher =

    work page 2023

  6. [3]

    and Paul, Abhijeet and Klimeck, Gerhard , title =

    Mehrotra, Saumitra R. and Paul, Abhijeet and Klimeck, Gerhard , title =. Applied Physics Letters , volume =. 2011 , month =. doi:10.1063/1.3583983 , url =

    work page doi:10.1063/1.3583983 2011

  7. [4]

    Littlejohn and J.R

    M.A. Littlejohn and J.R. Hauser and T.H. Glisson and D.K. Ferry and J.W. Harrison , doi =. Alloy scattering and high field transport in ternary and quaternary III--V semiconductors , url =. Solid-State Electronics , number =. 1978 , bdsk-url-1 =

    work page 1978

  8. [5]

    An arbitrary L agrangian- E ulerian computing method for all flow speeds

    Hirt, CW and Amsden, AA and Cook, JL. An arbitrary L agrangian- E ulerian computing method for all flow speeds. J C omput P hys. 1974

    work page 1974

Show all 45 references
  1. [6]

    Vertical GeSn nanowire MOSFETs for CMOS beyond silicon , url =

    Liu, Mingshan and Junk, Yannik and Han, Yi and Yang, Dong and Bae, Jin Hee and Frauenrath, Marvin and Hartmann, Jean-Michel and Ikonic, Zoran and B. Vertical GeSn nanowire MOSFETs for CMOS beyond silicon , url =. Communications Engineering , number =. 2023 , bdsk-url-1 =. doi:...

    2023 doi

  2. [7]

    and Murphy-Armando, F

    Sewell, K. and Murphy-Armando, F. , journal =. First-principles calculation of alloy scattering and n -type mobility in strained. 2025 , month =. doi:10.1103/PhysRevApplied.23.014074 , url =

    2025 doi

  3. [8]

    Isothermal Heteroepitaxy of Ge1--xSnx Structures for Electronic and Photonic Applications , type =

    Concepci. Isothermal Heteroepitaxy of Ge1--xSnx Structures for Electronic and Photonic Applications , type =. 2023 , year1 =. doi:10.1021/acsaelm.3c00112 , journal =

    2023 doi

  4. [9]

    Room Temperature Lattice Thermal Conductivity of GeSn Alloys , type =

    Concepci. Room Temperature Lattice Thermal Conductivity of GeSn Alloys , type =. 2024 , year1 =. doi:10.1021/acsaem.4c00275 , journal =

    2024 doi

  5. [10]

    and Wang, X

    Guo, R. and Wang, X. and Kuang, Y. and Huang, B. and Ruan, X. , title =. Journal of Physics D: Applied Physics , volume =. 2017 , doi =

    2017

  6. [11]

    Khatami, S. N. and Aksamija, Z. , title =. Physical Review Applied , volume =. 2016 , doi =

    2016

  7. [12]

    Jeffrey and Toberer, Eric S

    Snyder, G. Jeffrey and Toberer, Eric S. , date =. Complex thermoelectric materials , url =. Nature Materials , number =. 2008 , bdsk-url-1 =. doi:10.1038/nmat2090 , id =

    2008 doi

  8. [13]

    Energy Conversion and Management , volume =

    Thermoelectric generators: A review of applications , author =. Energy Conversion and Management , volume =. 2017 , doi =

    2017

  9. [14]

    Applied Thermal Engineering , volume =

    Thermal management of thermoelectric generators for waste energy recovery , author =. Applied Thermal Engineering , volume =. 2021 , doi =

    2021

  10. [16]

    Energy Conversion and Management , volume =

    The potential role of automotive thermoelectric generator to improve the fuel economy of vehicle , author =. Energy Conversion and Management , volume =. 2024 , doi =

    2024

  11. [17]

    Cataldo and Gary L

    Robert L. Cataldo and Gary L. Bennett , booktitle =. U.S. Space Radioisotope Power Systems and Applications: Past, Present and Future , url =. 2011 , bdsk-url-1 =. doi:10.5772/23914 , editor =

    2011 doi

  12. [18]

    Nature Materials , volume =

    High-performance thermoelectrics and challenges for practical devices , author =. Nature Materials , volume =. 2022 , doi =

    2022

  13. [19]

    eScience , volume =

    Advances in bismuth-telluride-based thermoelectric devices: Progress and challenges , author =. eScience , volume =. 2023 , doi =

    2023

  14. [20]

    Proceedings of the National Academy of Sciences , volume =

    Relationship between thermoelectric figure of merit and energy conversion efficiency , author =. Proceedings of the National Academy of Sciences , volume =. 2015 , doi =

    2015

  15. [21]

    quality factor: Towards maximizing zT , author =

    Universal behavior of the thermoelectric figure of merit, zT, vs. quality factor: Towards maximizing zT , author =. Materials Today Physics , volume =. 2019 , doi =

    2019

  16. [22]

    Materials Science and Engineering: B , volume =

    Research and Development for Thermoelectric Generation Technology Using Waste Heat from Steelmaking Process , author =. Materials Science and Engineering: B , volume =. 2015 , doi =

    2015

  17. [23]

    Applied Physics Letters , volume =

    Monolithic infrared silicon photonics: The rise of (Si)GeSn semiconductors , author =. Applied Physics Letters , volume =. 2021 , doi =

    2021

  18. [24]

    Advanced Optical Materials , volume =

    Room Temperature Lasing in GeSn Microdisks Enabled by Strain Engineering , author =. Advanced Optical Materials , volume =. 2022 , doi =

    2022

  19. [25]

    Nature Communications , volume =

    Continuous-wave electrically pumped multi-quantum-well laser based on group-IV semiconductors , author =. Nature Communications , volume =. 2024 , doi =

    2024

  20. [26]

    Room-Temperature Negative Differential Resistance and High Tunneling Current Density in GeSn Esaki Diodes , url =

    Liu, Chia-You and Tien, Kai-Ying and Chiu, Po-Yuan and Wu, Yu-Jui and Chuang, Yen and Kao, Hsiang-Shun and Li, Jiun-Yun , doi =. Room-Temperature Negative Differential Resistance and High Tunneling Current Density in GeSn Esaki Diodes , url =. 2022 , bdsk-url-1 =. https://adva...

    2022 doi

  21. [28]

    IEEE Solid-State Circuits Magazine , volume =

    Low-Power On-Chip Energy Harvesting: From Interface Circuits Perspective , author =. IEEE Solid-State Circuits Magazine , volume =. 2023 , doi =

    2023

  22. [29]

    Thermoelectric coolers for on-chip thermal management: Materials, design, and optimization , url =

    Wen-Yi Chen and Xiao-Lei Shi and Jin Zou and Zhi-Gang Chen , doi =. Thermoelectric coolers for on-chip thermal management: Materials, design, and optimization , url =. Materials Science and Engineering: R: Reports , keywords =. 2022 , bdsk-url-1 =

    2022

  23. [30]

    Hwang , title =

    Yongjin Lee and Gyeong S. Hwang , title =. Journal of Physics D: Applied Physics , year =

  24. [32]

    Si--Ge--Sn alloys grown by chemical vapour deposition: a versatile material for photonics, electronics, and thermoelectrics , url =

    Gr. Si--Ge--Sn alloys grown by chemical vapour deposition: a versatile material for photonics, electronics, and thermoelectrics , url =. Applied Physics A , number =. 2023 , bdsk-url-1 =. doi:10.1007/s00339-023-06478-4 , id =

    2023 doi

  25. [33]

    Advances in In-situ Boron and Phosphorous Doping of SiGeSn , url =

    Frauenrath, Marvin and Casiez, Lara and Concepci. Advances in In-situ Boron and Phosphorous Doping of SiGeSn , url =. 2022 , bdsk-url-1 =. doi:10.1149/10904.0003ecst , journal =

    2022 arXiv

  26. [34]

    Realizing high power factor and thermoelectric performance in band engineered

    Zhang, Yu and Xing, Congcong and Wang, Dongyang and Genç, Aziz and Lee, Seng Huat and Chang, Cheng and Li, Zhi and Zheng, Luyao and Lim, Khak Ho and Zhu, Hangtian and Smriti, Rabeya Bosry and Liu, Yu and Cheng, Shaobo and Hong, Min and Fan, Xiaolei and Mao, Zhiqiang and Zhao, ...

    doi

  27. [35]

    Enhanced average power factor and ZT value in PbSe thermoelectric material with dual interstitial doping

    Xu, Liqing and Wang, Xiaoying and Wang, Yang and Gao, Zhibin and Ding, Xiangdong and Xiao, Yu. Enhanced average power factor and ZT value in PbSe thermoelectric material with dual interstitial doping. Energy Environ. Sci. 2024. doi:10.1039/D3EE04539K

    2024 doi

  28. [36]

    Realizing High Thermoelectric Performance in n-Type Se-Free BiTe Materials by Spontaneous Incorporation of FeTe Nanoinclusions , url =

    Rahman, Jamil Ur and Nam, Woo Hyun and Jung, Yong-Jae and Won, Jong Ho and Oh, Jong-Min and Van Du, Nguyen and Rahman, Gul and Garc. Realizing High Thermoelectric Performance in n-Type Se-Free BiTe Materials by Spontaneous Incorporation of FeTe Nanoinclusions , url =. ENERGY &...

    2024 doi

  29. [37]

    Large increase of the thermoelectric power factor in multi-barrier nanodevices , journal =

    Antonella Masci and Elisabetta Dimaggio and Neophytos Neophytou and Dario Narducci and Giovanni Pennelli , keywords =. Large increase of the thermoelectric power factor in multi-barrier nanodevices , journal =. 2024 , issn =. doi:https://doi.org/10.1016/j.nanoen.2024.110391 , url =

    2024

  30. [38]

    Determination of the indirect bandgap of lattice-matched SiGeSn on Ge , journal =

    Daniel Schwarz and Erich Kasper and Florian Bärwolf and Ioan Costina and Michael Oehme , keywords =. Determination of the indirect bandgap of lattice-matched SiGeSn on Ge , journal =. 2024 , issn =. doi:https://doi.org/10.1016/j.mssp.2024.108565 , url =

    2024

  31. [39]

    Dresselhaus and Gang Chen and Ming Y

    Mildred S. Dresselhaus and Gang Chen and Ming Y. Tang and Ronggui Yang and Hohyun Lee and Dezhi Wang and Zhifeng Ren and Jean-Pierre Fleurial and Pawan Gogna , title =. Advanced Materials , volume =. 2007 , publisher =

    2007

  32. [40]

    Applied Physics Letters , volume =

    Deyu Li and Yiying Wu and Rong Fan and Peidong Yang and Arun Majumdar , title =. Applied Physics Letters , volume =. 2003 , publisher =

    2003

  33. [41]

    Yu and W

    B. Yu and W. Wang and S. Wang and Y. Wang and D. Wang and W. Liu and H. Wang and G. Chen and Z. Ren , title =. Nano Letters , volume =. 2012 , publisher =

    2012

  34. [42]

    Cahill , title =

    David G. Cahill , title =. Review of Scientific Instruments , volume =. 1990 , publisher =

    1990

  35. [43]

    SiGe and Ge: Materials, Processing, and Devices , series =

    Martin Wagner and Gerhard Span and Stefan Holzer and Vassil Palankovski and Siegfried Selberherr , title =. SiGe and Ge: Materials, Processing, and Devices , series =. 2006 , publisher =

    2006

  36. [44]

    Nature Communications , volume =

    Haonan Shi and Yi Wen and Shulin Bai and Cheng Chang and Lizhong Su and Tian Gao and Shibo Liu and Dongrui Liu and Bingchao Qin and Yongxin Qin and Huiqiang Liang and Xin Qian and Zhenghao Hou and Xiang Gao and Tianhang Zhou and Qing Tan and Li-Dong Zhao , title =. Nature Comm...

    2025

  37. [45]

    Thermoelectric Efficiency of Epitaxial GeSn Alloys for Integrated Si-Based Applications: Assessing the Lattice Thermal Conductivity by Raman Thermometry , type =

    Spirito, Davide and von den Driesch, Nils and Manganelli, Costanza Lucia and Zoellner, Marvin Hartwig and Corley-Wiciak, Agnieszka Anna and Ikonic, Zoran and Stoica, Toma and Gr. Thermoelectric Efficiency of Epitaxial GeSn Alloys for Integrated Si-Based Applications: Assessing...

    2021 doi

Pith tools

Reviewed August 5, 2026 · model on record in the stance chip above.