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Dispersive Readout of a Few-Electron Double Quantum Dot with Fast rf Gate-Sensors

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arxiv 1210.4645 v1 pith:WY5GMUDT submitted 2012-10-17 cond-mat.mes-hall quant-ph

Dispersive Readout of a Few-Electron Double Quantum Dot with Fast rf Gate-Sensors

J. I. Colless , A. C. Mahoney , J. M. Hornibrook , A. C. Doherty , D. J. Reilly , H. Lu , A. C. Gossard This is my paper
classification cond-mat.mes-hall quant-ph
keywords quantumchargedispersivereadoutdetectorsdoublefew-electrongate-sensing
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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We report the dispersive charge-state readout of a double quantum dot in the few-electron regime using the in situ gate electrodes as sensitive detectors. We benchmark this gate-sensing technique against the well established quantum point contact (QPC) charge detector and find comparable performance with a bandwidth of 10 MHz and an equivalent charge sensitivity of 6.3 x 10-3 e/ \sqrt Hz. Dispersive gate-sensing alleviates the burden of separate charge detectors for quantum dot systems and promises to enable readout of qubits in scaled-up arrays.

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    InAs-Pb hybrid nanowire tetron achieves ~20 s parity switching time with h/2e-periodic bimodal capacitance shifts, using a new rf technique to resolve wire-end states at μeV precision.