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Optical control of electrons in a Floquet topological insulator

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arxiv 2407.17917 v2 pith:Y2ILRH3V submitted 2024-07-25 physics.optics cond-mat.mes-hall

Optical control of electrons in a Floquet topological insulator

classification physics.optics cond-mat.mes-hall
keywords controlelectronslight-dressedopticaltopologicalbandfloquetgraphene
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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Light-dressed materials hold enormous potential for generating new electronic properties. The band structure resulting from light-dressing can exhibit starkly different quantum and topological phenomena. So far, optical control of charge within a light-dressed band structure has been elusive. Here, we demonstrate optical control of electrons in light-dressed graphene. By focusing circularly polarized femtosecond laser pulses at 1550 nm on monolayer graphene, we generate a Floquet topological insulator (FTI). With a phase-locked second harmonic field, we dynamically control electrons in this FTI state. For the first time, we observe photocurrent circular dichroism, the all-optical anomalous Hall effect, and FTI valley-polarized currents. The photocurrents show strong sub-cycle phase-sensitivity, opening the door to ultrafast control within topologically protected electronics (topotronics), spectroscopy, and attosecond physics in novel quantum materials.

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Cited by 3 Pith papers

Reviewed papers in the Pith corpus that reference this work. Sorted by Pith novelty score.

  1. Ultrafast spectroscopy and role of interlayer coupling in high harmonic generation from layered solids

    physics.optics 2026-04 unverdicted novelty 7.0

    Interlayer coupling in layered solids modifies high harmonic generation yields via a fourth-order polynomial dependence even for in-plane polarized driving lasers.

  2. Double circular dichroism high harmonic spectroscopy: An ultrafast probe for topological photocurrents

    cond-mat.other 2026-04 unverdicted novelty 7.0

    Double circular dichroism in high-harmonic emission survives only in broken time-reversal symmetry materials and carries opposite signs from bulk versus edge states, enabling their separation in photocurrent measurements.

  3. Dielectric Screening in Electromagnetic Dressing of Semiconductors

    cond-mat.mtrl-sci 2026-02 unverdicted novelty 5.0

    Dielectric screening makes Volkov dressing dominate Floquet effects in below-band-gap driven van der Waals semiconductors, enabling extraction of lower bounds on the real dielectric function from polarization-dependen...