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Topological Insulator nano-SQUID: Flux-tunable platform for topological superconductivity

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arxiv 2412.07993 v3 pith:YJFDV3GW submitted 2024-12-11 cond-mat.mes-hall cond-mat.mtrl-scicond-mat.str-elcond-mat.supr-con

classification cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elcond-mat.supr-con
keywords topologicalbottomphaseplatformcolumnarinsulatorjunctionsmagnetic
verification ladder T0 review T1 audit T2 compute T3 formal
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abstract

Many efforts have been made in the past decade to realize topological superconductivity using superconducting proximity effect, but an ideal platform is still lacking. A 3D topological insulator (TI) is promising for this purpose due to the spin-momentum-locked surface state. Here we propose a novel yet simple TI platform which gives rise to a topological phase that is robust against disorder. It consists of a bulk-insulating rectangular TI nanowire laterally sandwiched by two superconductors. In this structure, the top and bottom surfaces individually work as SNS line junctions, forming a nanometer-scale columnar SQUID in which the nanowire cross-section defines the threading magnetic flux $\Phi$ in axial magnetic fields. We theoretically show that, when the two junctions are asymmetric, a robust topological phase occurs periodically for a wide range of $\Phi$, independently of the chemical potential. Our experiment found that a TI device of this structure indeed behaves as a columnar nano-SQUID where the supercurrent flows only through the top and bottom surfaces with vanishing bulk contribution. Furthermore, the top/bottom asymmetry can be tuned by a back gate, a key ingredient for the topological phase.

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Cited by 2 Pith papers

Reviewed papers in the Pith corpus that reference this work. Sorted by Pith novelty score.

  1. Fabrication of high-quality topological insulator nanodevices from bulk-insulating air-sensitive Sb-Bi$_2$Se$_3$

    cond-mat.mes-hall 2026-07 unverdicted novelty 6.0 of 10

    Room-temperature fabrication protocol for SBS topological insulator nanodevices that preserves low carrier density, shown via quantum oscillations, gate tunability, and weak antilocalization.

  2. Gate-Tunable Ambipolar Josephson Current in a Topological Insulator

    cond-mat.mes-hall 2025-09 accept novelty 6.0 of 10

    Gate-tunable ambipolar Josephson current demonstrated in MBE-grown (Bi,Sb)2Te3 topological insulator films, suppressed near Dirac point but persisting across it, weaker in thicker films due to bulk channels.

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