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Nonexponential Relaxation of Magnetization at the Resonant Tunneling Point under a Fluctuating Random Noise

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arxiv cond-mat/0005013 v1 pith:XTY7YM5W submitted 2000-05-01 cond-mat.mtrl-sci cond-mat.stat-mech

Nonexponential Relaxation of Magnetization at the Resonant Tunneling Point under a Fluctuating Random Noise

classification cond-mat.mtrl-sci cond-mat.stat-mech
keywords relaxationfieldfluctuatingmagnetizationnonexponentialrandomresonanttunneling
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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Nonexponential relaxation of magnetization at resonant tunneling points of nanoscale molecular magnets is interpreted to be an effect of fluctuating random field around the applied field. We demonstrate such relaxation in Langevin equation analysis and clarify how the initial relaxation (square-root time) changes to the exponential decay. The scaling properties of the relaxation are also discussed.

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