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arxiv 1205.1822 v1 pith:2RHTFKSL submitted 2012-05-08 cond-mat.mes-hall cond-mat.mtrl-sci

Control of valley polarization in monolayer MoS2 by optical helicity

classification cond-mat.mes-hall cond-mat.mtrl-sci
keywords valleychargecontrolopticalpolarizationcarriersdevicesmos2
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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Electronic and spintronic devices rely on the fact that free charge carriers in solids carry electric charge and spin, respectively. There are, however, other properties of charge carriers that might be exploited in new families of devices. In particular, if there are two or more conduction (or valence) band extrema in momentum space, then confining charge carriers in one of these valleys allows the possibility of valleytronic devices. Such valley polarization has been demonstrated by using strain and magnetic fields, but neither of these approaches allow for dynamic control. Recently, optical control of valley occupancy in graphene with broken inversion symmetry has been proposed but remains experimentally difficult to realize. Here we demonstrate that optical pumping with circularly-polarized light can achieve complete dynamic valley polarization in monolayer MoS2, a two dimensional (2D) non-centrosymmetric crystal with direct energy gaps at two valleys. Moreover, this polarization is retained for longer than 1 ns. Our results demonstrate the viability of optical valley control and valley-based electronic and optoelectronic applications in MoS2 monolayers.

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  1. Unveiling the Spin-Valley Structure of Dipolar Exciton Ladders in R-stacked WSe$_2$/WS$_2$ Moir\'e Heterobilayers

    cond-mat.mes-hall 2026-07 conditional novelty 6.0

    Helicity-resolved magneto-photoluminescence reveals that the unequal spacing of the dipolar exciton ladder in R-stacked WSe₂/WS₂ arises from triplet and singlet spin-valley two-exciton states, not simple occupation-nu...