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Universal scaling behavior of the single electron box in the strong tunneling limit
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Universal scaling behavior of the single electron box in the strong tunneling limit
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We perform a numerical analysis of recently proposed scaling functions for the single electron box. Specifically, we study the ``magnetic'' susceptibility as a function of tunneling conductance and gate charge, and the effective charging energy at zero gate charge as a function of tunneling conductance in the strong tunneling limit. Our Monte Carlo results confirm the accuracy of the theoretical predictions.
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Cited by 1 Pith paper
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