Coupling trilayer TI film with z-oriented d-wave altermagnet gaps helical edges while preserving two Weyl points, yielding 2D higher-order Weyl semimetals with corner states.
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8 Pith papers cite this work. Polarity classification is still indexing.
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cond-mat.mes-hall 2 cond-mat.mtrl-sci 2 cond-mat.str-el 2 cond-mat.quant-gas 1 cond-mat.supr-con 1verdicts
UNVERDICTED 8representative citing papers
Altermagnetic spin splitting selects direction-selective triplet pairing in 2D d-wave metals and generates spin-locked Majorana edge states in both spin-conserving and Rashba-mixed regimes.
P6_3-B30 is a three-dimensional boron crystal that functions as a spinless topological semimetal with a symmetry-enforced nodal surface on the kz=π plane and various Weyl fermions at high-symmetry points.
In disordered variants of the Su-Schrieffer-Heeger model, the entanglement entropy difference ΔS^A between half-filled and near-half-filled ground states is zero in the topological phase and finite in the trivial phase, providing a robust diagnostic that can outperform the topological invariant Q.
Mean-field theory on a quartic-dispersion Chern band for rhombohedral graphene yields a chiral topological superconductor that transitions to a trivial BEC at T=0; the composite-fermion version realizes a Moore-Read state.
A simplified real-space Chern number via supercell Wilson loops is shown to be integer-quantized and is used to demonstrate that polarized disorder preserves topology while uniform disorder drives a phase transition in an extended Rice-Mele model.
Interaction-induced doublons in a ring lattice with OAM map to effective SSH chains and Creutz ladders that support topologically protected edge states.
Reinforcement fine-tuning of a generative model produces new topological insulators and crystalline insulators, exemplified by Ge2Bi2O6 with a 0.26 eV full band gap.
citing papers explorer
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Two-dimensional higher-order Weyl semimetals
Coupling trilayer TI film with z-oriented d-wave altermagnet gaps helical edges while preserving two Weyl points, yielding 2D higher-order Weyl semimetals with corner states.
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Direction-selective triplet pairing and spin-edge locking in altermagnetic metals
Altermagnetic spin splitting selects direction-selective triplet pairing in 2D d-wave metals and generates spin-locked Majorana edge states in both spin-conserving and Rashba-mixed regimes.
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Symmetry-protected coexistence of a nodal surface and multiple types of Weyl fermions in $P6_3$-$\text{B}_{30}$
P6_3-B30 is a three-dimensional boron crystal that functions as a spinless topological semimetal with a symmetry-enforced nodal surface on the kz=π plane and various Weyl fermions at high-symmetry points.
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Entanglement entropy as a probe of topological phase transitions
In disordered variants of the Su-Schrieffer-Heeger model, the entanglement entropy difference ΔS^A between half-filled and near-half-filled ground states is zero in the topological phase and finite in the trivial phase, providing a robust diagnostic that can outperform the topological invariant Q.
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Chiral superconductivity from parent Chern band and its non-Abelian generalization
Mean-field theory on a quartic-dispersion Chern band for rhombohedral graphene yields a chiral topological superconductor that transitions to a trivial BEC at T=0; the composite-fermion version realizes a Moore-Read state.
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Real-space formulation of the Chern invariant and topological phases in a disordered Chern insulator
A simplified real-space Chern number via supercell Wilson loops is shown to be integer-quantized and is used to demonstrate that polarized disorder preserves topology while uniform disorder drives a phase transition in an extended Rice-Mele model.
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Topological bound states in a lattice of rings with nearest-neighbour interactions
Interaction-induced doublons in a ring lattice with OAM map to effective SSH chains and Creutz ladders that support topologically protected edge states.
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Design Topological Materials by Reinforcement Fine-Tuned Generative Model
Reinforcement fine-tuning of a generative model produces new topological insulators and crystalline insulators, exemplified by Ge2Bi2O6 with a 0.26 eV full band gap.