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Multi-Valley Superconductivity In Ion-Gated MoS2 Layers

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arxiv 1802.06675 v2 pith:XOHT6EIN submitted 2018-02-19 cond-mat.supr-con cond-mat.mes-hallcond-mat.mtrl-sci

Multi-Valley Superconductivity In Ion-Gated MoS2 Layers

classification cond-mat.supr-con cond-mat.mes-hallcond-mat.mtrl-sci
keywords associatedelectronmulti-valleypocketstransitionelectrostaticfermifield
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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Layers of transition metal dichalcogenides (TMDs) combine the enhanced effects of correlations associated with the two-dimensional limit with electrostatic control over their phase transitions by means of an electric field. Several semiconducting TMDs, such as MoS$_2$, develop superconductivity (SC) at their surface when doped with an electrostatic field, but the mechanism is still debated. It is often assumed that Cooper pairs reside only in the two electron pockets at the K/K' points of the Brillouin Zone. However, experimental and theoretical results suggest that a multi-valley Fermi surface (FS) is associated with the SC state, involving 6 electron pockets at the Q/Q' points. Here, we perform low-temperature transport measurements in ion-gated MoS$_2$ flakes. We show that a fully multi-valley FS is associated with the SC onset. The Q/Q' valleys fill for doping$\gtrsim2\cdot10^{13}$cm$^{-2}$, and the SC transition does not appear until the Fermi level crosses both spin-orbit split sub-bands Q$_1$ and Q$_2$. The SC state is associated with the FS connectivity and promoted by a Lifshitz transition due to the simultaneous population of multiple electron pockets. This FS topology will serve as a guideline in the quest for new superconductors.

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