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Ionization Yield in Silicon for eV-Scale Electron-Recoil Processes

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arxiv 2004.10709 v2 pith:43I2IJWK submitted 2020-04-22 astro-ph.IM hep-exphysics.data-anphysics.ins-det

Karthik Ramanathan , Noah Kurinsky This is my paper · ORCID
classification astro-ph.IMhep-exphysics.data-anphysics.ins-det
keywords chargeyieldmodelenergyimpactsiliconelectronsexplore
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The development of single charge resolving, macroscopic silicon detectors has opened a window into rare processes at the O(eV) scale. In order to reconstruct the energy of a given event, or model the charge signal obtained for a given amount of energy absorbed by the electrons in a detector, an accurate charge yield model is needed. In this paper we review existing measurements of charge yield in Silicon, focusing in particular on the region below 1 keV. We highlight a calibration gap between 12-50 eV (referred to as the "UV-gap") and employ a phenomenological model of impact ionization to explore the likely charge yield in this energy regime. Finally, we explore the impact of variations in this model on a test case, that of dark matter scattering off electrons, to illustrate the scientific impact of uncertainties in charge yield.

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Cited by 3 Pith papers

Reviewed papers in the Pith corpus that reference this work. Sorted by Pith novelty score. Full citation record

  1. Probing Supernova Neutrino Boosted Dark Matter with Collective Excitation

    hep-ph 2025-01 conditional novelty 7.0 of 10

    Galactic supernova neutrino boosted dark matter can produce plasmon excitations in silicon detectors, improving sub-MeV dark matter sensitivity by 3 to 4 orders of magnitude over Super-K.

  2. Direct Detection of Leptophobic Dark Matter with Electronic Collective Excitations

    hep-ph 2025-10 conditional novelty 6.0 of 10

    Leptophobic dark matter can excite plasmons in silicon through hadronic loops, and SENSEI data now constrain its nucleon cross section down to ~1e-31 cm^2 in the sub-MeV mass range.

  3. SPLENDOR: a novel detector platform to search for light dark matter with narrow-gap semiconductors

    physics.ins-det 2025-07 conditional novelty 6.0 of 10

    A dark matter detector platform combining a 60 meV-gap semiconductor (Eu5In2Sb6) with cryogenic HEMT readout and daily modulation analysis is presented, with projected sensitivity to sub-MeV dark matter.

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