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Circulators Based on Coupled Quantum Anomalous Hall Insulators and Resonators

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arxiv 2505.07770 v2 pith:MPMRT4CD submitted 2025-05-12 quant-ph cond-mat.mtrl-sci

Circulators Based on Coupled Quantum Anomalous Hall Insulators and Resonators

classification quant-ph cond-mat.mtrl-sci
keywords rangeasymmetricdevicespowerquantumcirculatorscouplingcouplings
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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Integrated plasmonics is advancing rapidly, enabling a wide range of functionalities to be incorporated onto a single chip. Applications span information processing, computation, quantum sensing, and dark-matter detection. This progress has driven the development of integrated non-reciprocal devices, which are essential for preventing unwanted feedback that can degrade system performance. While non-reciprocal devices have been realized in edge magnetoplasmon materials via classical interference effects, their operation is often limited by the input power range. Here, we demonstrate that topological circulators utilizing asymmetric coupling offer improved input power range, isolation, and insertion loss. In this configuration, we demonstrate the coupling between a chiral edge magnetoplasmonic resonator and a pair of LC resonators is well described by an effective non-Hermitian two-site Hatano-Nelson model with asymmetric directional couplings, resulting in nonreciprocal behavior. The coherent photon-plasmon interaction enables a circulator with up to 50 dB of isolation across a broad range of excitation power. These results suggest that magnetic topological insulators provide a promising platform for realizing asymmetric non-Hermitian couplings at radio frequencies and for exploring regimes of strong directional suppression and possible exceptional-point physics. More broadly, they highlight the potential of topological-material-based microwave devices for future integration with superconducting quantum information platforms.

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    Proximity to WSe2 engineers the magnetic energy landscape in tMBG via induced SOC, enabling nonvolatile gate switching of QAH states and gate tuning between |C|=2, |C|=1, and metallic regimes without magnetic reset.