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arxiv: 2604.17103 · v1 · submitted 2026-04-18 · ❄️ cond-mat.str-el · cond-mat.mtrl-sci

Experimental Signatures of Topological Transport in Polycrystalline FeSi Thin Films

R. Mantovan , A. Bozhko , V. Zhurkin , A. Bogach , A. Khanas , S. Zarubin , A. Zenkevich , V. Glushkov This is my paper

Pith reviewed 2026-05-10 06:12 UTC · model grok-4.3

classification ❄️ cond-mat.str-el cond-mat.mtrl-sci
keywords anomalous Hall effectWeyl semimetaltopological transportpolycrystalline FeSichiral anomalyBerry phasethin films
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The pith

Polycrystalline ε-FeSi thin films exhibit temperature-independent anomalous Hall conductivity proving intrinsic topological origin.

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The paper establishes that clear signatures of non-trivial topology appear in the electron transport of polycrystalline ε-FeSi films even though they contain significant disorder from nanoscale grains. The key observation is that the anomalous Hall conductivity stays constant at approximately 14 microsiemens per square as temperature drops below 200 kelvin, rather than changing with the longitudinal conductivity. This behavior indicates that the Hall effect arises from the intrinsic Berry phase in the band structure instead of extrinsic scattering mechanisms. Supporting evidence comes from the presence of a chiral anomaly in both the anisotropic magnetoresistance and the planar Hall effect, which are characteristic of Weyl semimetals. Establishing this in a simple, disordered film form matters because it suggests topological materials can function without perfect single crystals and at relatively high temperatures.

Core claim

In 65-nm-thick polycrystalline ε-FeSi films, the anomalous Hall conductivity σ_xy^AHE remains temperature-independent below 200 K at a value of approximately 14 μS per square, scaling as constant with respect to the longitudinal conductivity σ_xx. This scaling relation demonstrates that the anomalous Hall effect is intrinsic and stems from a non-trivial Berry phase. The topological character is reinforced by observations of the chiral anomaly in anisotropic longitudinal magnetoresistance and planar Hall effect. From relating the scaled anomalous Hall conductance to a quantized response, the separation between Weyl points is estimated as (k_+^W - k_-^W)/(2π) ≈ 0.36. These features persist in

What carries the argument

The temperature-independent anomalous Hall conductivity scaling σ_xy^AHE ∼ const(σ_xx) together with chiral anomaly signatures in magnetotransport, which together establish the intrinsic Berry phase origin and Weyl semimetal nature.

If this is right

  • The anomalous Hall effect in ε-FeSi is confirmed as intrinsic rather than scattering-induced.
  • The material qualifies as a Weyl semimetal with a specific Weyl node separation of about 0.36 reciprocal units.
  • Topological transport features remain robust against polycrystalline grain boundaries and surface-bulk crossovers.
  • ε-FeSi films offer a route to high-temperature Weyl semimetal behavior without noble metals or single-crystal growth.
  • The scaling relation dominates over nanoscale disorder in determining the Hall response.

Where Pith is reading between the lines

These are editorial extensions of the paper, not claims the author makes directly.

  • This finding implies that strong topological band features can overcome moderate disorder, suggesting polycrystalline samples may suffice for many topological transport studies.
  • Similar experiments on other iron-based or silicide compounds could reveal whether this robustness is general or specific to the ε-FeSi band structure.
  • The estimated Weyl point distance provides a concrete target for first-principles calculations to verify the band topology.
  • Device applications in electronics or sensors might exploit these films for their simplicity of fabrication and high-temperature operation.

Load-bearing premise

The observed constant anomalous Hall conductivity and chiral anomaly features arise from the intrinsic band topology rather than from scattering at the polycrystalline grain boundaries or from surface versus bulk transport differences.

What would settle it

If measurements showed that the anomalous Hall conductivity varies with temperature or with longitudinal conductivity below 200 K, or if the anisotropic magnetoresistance lacked the characteristic chiral anomaly signature, that would indicate the topological interpretation is incorrect.

read the original abstract

Disorder in any form is considered to be highly detrimental to the experimental exploration of novel phenomena in quantum materials with non-trivial band topology. Contrary to established belief, clear topological features are reliably detected in the electron transport of polycrystalline 65-nm-thick \epsilon -FeSi films grown via solid-state reaction of Fe deposited on a Si(100) substrate. The observation of temperature-independent anomalous Hall conductivity \sigma_{xy}^{AHE} \sim const (\sigma_{xx)) (\sigma_{xy}^{AHE} \approx 14 uS/sq.) below 200 K firmly proves the anomalous Hall effect in this compound to be intrinsic and originating from a non-trivial Berry phase. The discovered scaling dominates over the nanoscale (\sim 40 nm) polycrystalline texture and is robust to temperature crossover between bulk and surface modes of electron transport. The non-trivial topological state of \epsilon-FeSi is also confirmed by a chiral anomaly both in anisotropic longitudinal magnetoresistance and planar Hall effect specific for Weyl semimetals. Relating scaled anomalous Hall conductance to a "quantized" Hall response of a Weyl semimetal the distance between two Weyl points has been estimated as (k_{+}^{W}-k_{-}^{W})/(2\pi) \approx 0.36. Our findings confirm the topological origin of electron transport in the polycrystalline \epsilon -FeSi thin films and discover its potential as a new high temperature and noble metal-free Weyl semimetal.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, simulated authors' rebuttal, and a circularity audit. Tearing a paper down is the easy half of reading it; the pith above is the substance, this is the friction.

Referee Report

3 major / 2 minor

Summary. The paper reports experimental signatures of topological transport in polycrystalline 65-nm-thick ε-FeSi thin films grown by solid-state reaction, including temperature-independent anomalous Hall conductivity σ_xy^AHE ≈ 14 μS/sq. below 200 K that scales independently of longitudinal conductivity σ_xx, as well as chiral-anomaly-like features in anisotropic magnetoresistance and planar Hall effect. These observations are interpreted as proving an intrinsic Berry-phase origin of the AHE from Weyl points in the band structure, with the Weyl-point separation estimated as (k_+^W - k_-^W)/2π ≈ 0.36 by mapping the scaled AHE conductance onto a quantized Weyl-semimetal response; the scaling is claimed to dominate over the ~40 nm grain size and to be robust against bulk-surface crossover.

Significance. If the central claims survive scrutiny, the result would be significant because it demonstrates that non-trivial topological transport can be observed in disordered polycrystalline films, contrary to the usual expectation that disorder destroys such signatures. This could position ε-FeSi as a practical, high-temperature, noble-metal-free Weyl-semimetal candidate. The work provides concrete experimental data on solid-state-reaction-grown films and reports specific numerical values for the AHE conductivity and Weyl separation.

major comments (3)
  1. [Abstract] Abstract: the statement that temperature-independent scaling 'firmly proves' an intrinsic Berry-phase origin is not accompanied by quantitative effective-medium modeling or control experiments that exclude classical grain-boundary scattering or percolative transport in the ~40 nm polycrystalline grains, which the skeptic notes can produce a saturating effective Hall conductivity without topology.
  2. [Abstract] Abstract: the numerical extraction of Weyl-point separation (k_+^W - k_-^W)/2π ≈ 0.36 assumes that the measured sheet AHE conductance maps directly onto the ideal 3D Weyl-semimetal quantized response; this mapping is invoked rather than derived or validated independently within the manuscript, creating a circularity risk for the topological claim.
  3. The manuscript provides no error bars, full raw datasets, or statistical assessment for the key observation that σ_xy^AHE remains constant below 200 K while independent of σ_xx, making it impossible to judge the robustness of the claimed temperature independence against experimental uncertainty or sample-to-sample variation.
minor comments (2)
  1. [Abstract] Units in the abstract ('uS/sq.') should be written explicitly as μS/square and the conversion to 3D conductivity (if any) should be stated for clarity.
  2. The paper would benefit from a dedicated methods or supplementary section detailing grain-size statistics, film-thickness uniformity, and any Hall-bar geometry used for the sheet-conductance measurements.

Simulated Author's Rebuttal

3 responses · 0 unresolved

We thank the referee for their careful and constructive review of our manuscript. We address each major comment point by point below, indicating revisions where appropriate to improve clarity and address concerns about evidence strength.

read point-by-point responses

  1. Referee: [Abstract] Abstract: the statement that temperature-independent scaling 'firmly proves' an intrinsic Berry-phase origin is not accompanied by quantitative effective-medium modeling or control experiments that exclude classical grain-boundary scattering or percolative transport in the ~40 nm polycrystalline grains, which the skeptic notes can produce a saturating effective Hall conductivity without topology.

    Authors: We agree that the phrasing 'firmly proves' is overly strong given the absence of quantitative effective-medium modeling in the original manuscript. The temperature-independent σ_xy^AHE below 200 K and its independence from σ_xx are presented as signatures of intrinsic Berry-phase origin, consistent with established scaling arguments in the literature for intrinsic AHE. However, we acknowledge that classical grain-boundary or percolative effects in ~40 nm grains could in principle mimic saturation without topology. In the revision we will change the abstract wording to 'provide strong evidence for' an intrinsic origin, add a dedicated discussion paragraph comparing the observed scaling to expectations for classical mechanisms (noting the 65 nm film thickness relative to grain size), and explicitly state that no effective-medium simulation was performed. revision: yes

  2. Referee: [Abstract] Abstract: the numerical extraction of Weyl-point separation (k_+^W - k_-^W)/2π ≈ 0.36 assumes that the measured sheet AHE conductance maps directly onto the ideal 3D Weyl-semimetal quantized response; this mapping is invoked rather than derived or validated independently within the manuscript, creating a circularity risk for the topological claim.

    Authors: The estimate follows from scaling the measured sheet AHE conductance against the theoretical quantized Hall response expected for a Weyl semimetal with node separation, as outlined in prior theoretical works on Weyl transport. We recognize that this mapping assumes the 3D Weyl model remains applicable to our polycrystalline thin-film geometry and that no independent validation (such as spectroscopic confirmation of the nodes) is provided within the transport study. To reduce circularity concerns, the revised manuscript will explicitly cite the theoretical references used for the mapping, state the key assumptions, and qualify the value as an estimate derived from the observed conductance rather than a direct proof of topology. revision: yes

  3. Referee: The manuscript provides no error bars, full raw datasets, or statistical assessment for the key observation that σ_xy^AHE remains constant below 200 K while independent of σ_xx, making it impossible to judge the robustness of the claimed temperature independence against experimental uncertainty or sample-to-sample variation.

    Authors: We accept that error bars and statistical details are necessary for evaluating robustness. The revised version will include error bars on the relevant σ_xy^AHE and σ_xx plots, calculated from repeated measurements and fitting uncertainties, along with a brief statistical note confirming constancy below 200 K across the measured temperature range. Full raw datasets are extensive; they will be made available upon reasonable request and/or deposited in a public data repository, consistent with standard practice for transport papers where complete inclusion in the manuscript is impractical due to length. revision: partial

Circularity Check

0 steps flagged

No significant circularity detected; derivation relies on external theory and experiment

full rationale

The paper reports experimental observations of temperature-independent σ_xy^AHE ≈ 14 μS/sq below 200 K, interpreted as proof of intrinsic Berry-phase AHE using the standard criterion that σ_AHE independent of σ_xx indicates intrinsic origin. Chiral-anomaly signatures in AMR and PHE are presented as confirming Weyl topology. The Weyl-point separation estimate (k_+^W - k_-^W)/2π ≈ 0.36 is obtained by applying a theoretical mapping from Weyl-semimetal literature to the measured scaled conductance; this is an interpretive application of external theory, not a reduction by construction or self-referential fit within the paper. No equations are shown that equate a derived quantity to its own input, no load-bearing self-citations are quoted, and no ansatz is smuggled via prior author work. The polycrystalline texture is addressed by assertion of dominance rather than by any fitted or self-defined parameter. The chain is therefore self-contained against external benchmarks, with interpretations depending on established physics outside the present work.

Axiom & Free-Parameter Ledger

1 free parameters · 2 axioms · 0 invented entities

The paper is experimental and rests on standard condensed-matter interpretations of transport data; the only quantitative output is a derived separation estimate that depends on an assumed mapping from AHE value to Weyl-point distance.

free parameters (1)
  • Weyl point separation = 0.36
    Derived value of 0.36 obtained by scaling the measured AHE conductance to a quantized Weyl-semimetal Hall response.
axioms (2)
  • domain assumption Temperature-independent anomalous Hall conductivity indicates intrinsic Berry-phase origin rather than extrinsic scattering
    Invoked directly to conclude non-trivial Berry phase from the observed scaling below 200 K.
  • domain assumption Anisotropic longitudinal magnetoresistance and planar Hall effect signatures confirm chiral anomaly of Weyl semimetals even in polycrystalline films
    Used to corroborate the topological state despite nanoscale grain texture.

pith-pipeline@v0.9.0 · 5600 in / 1563 out tokens · 56095 ms · 2026-05-10T06:12:33.818953+00:00 · methodology

discussion (0)

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Reference graph

Works this paper leans on

36 extracted references · 36 canonical work pages

  1. [1]

    Introduction Recently, the class of non-centrosymmetric MSi monosilicides ( M=Fe, Co, Mn, R h, Ru etc., space group 198, P213) has renewed keen interest among researchers after ab initio calculations predicted exotic massless fermionic excitations with nonzero Berry flux in CoSi

    work page

  2. [2]

    and u nconventional chiral fermions and large topological Fermi arcs in RhSi [2]. Nontrivial topological entity of MSi was supported by novel gapless surface phonon s at double-Weyl points reported for these crystalline materials (M=Fe, Co, Mn, Rh, Ru) [3] and proved experimentally for parity breaking FeSi single crystals with the help of inelastic x- ray...

    work page 2013

  3. [3]

    Experimental methods. A 30 nm thick Fe layer enriched at 95% with 57Fe isotope to enable conversion electron Mössbauer spectroscopy (CEMS) was deposited by Pulsed Laser Deposition (PLD) technique on the Si (100) substrate with natural SiO 2 layer chemically etched prior to deposition. FeSi thin film was formed by a solid -state reaction following in situ ...

    work page

  4. [4]

    bulk phenomena

    Results and discussions. 3.1 Temperature crossover in resistivity of -FeSi thin films. Figure 2a presents zero field resistivity xx measured at temperatures between 1.7 K and 300 K. Room temperature value of xx(300K)=220 cm agrees well with those ones previously reported for bulk FeSi single crystals (200-240 cm [ 22-24]) and epitaxial/polycrysta...

    work page

  5. [5]

    This temperature independent scaling clearly indicates AHE intrinsic nature originated from non-zero Berry curvature [9]

    Conclusion Based on low temperature HE study, we have discovered that our -FeSi thin films display the universal behavior of anomalous Hall conductivity xy AHE~const(xx) over the wide 1.7-200 K temperature range. This temperature independent scaling clearly indicates AHE intrinsic nature originated from non-zero Berry curvature [9]. To the best of our ...

    work page

  6. [6]

    P. Tang, Q. Zhou, S.-Ch. Zhang, Multiple Types of Topological Fermions in Transition Metal Silicides, Phys. Rev. Lett. 119, 206402 (2017). doi: 10.1103/PhysRevLett.119.206402

    work page doi:10.1103/physrevlett.119.206402 2017

  7. [7]

    Chang, S.-Y

    G. Chang, S.-Y. Xu, B. Wieder, D. Sanchez, Sh.-M. Huang, I. Belopolski, T.-R. Chang, S. Zhang, A. Bansil, H. Lin, M.Z. Hasan, Unconventional Chiral Fermions and Large Topological Fermi Arcs in RhSi, Phys. Rev. Lett. 119, 206401 (2017). doi: 10.1103/PhysRevLett.119.206401

    work page doi:10.1103/physrevlett.119.206401 2017

  8. [8]

    Zhang, Z

    T. Zhang, Z. Song, A. Alexandradinata, H. Weng, Ch. Fang, L. Lu, Zh. Fang, Double-Weyl Phonons in Transition-Metal Monosilicides, Phys. Rev. Lett. 120, 016401 (2018). doi: 10.1103/PhysRevLett.120.016401

    work page doi:10.1103/physrevlett.120.016401 2018

  9. [9]

    Miao, T.T

    H. Miao, T.T. Zhang, L. Wang, D. Meyers, A.H. Said, Y.L. Wang, Y.G. Shi, H.M. Weng, Z. Fang, M.P.M. Dean, Observation of Double Weyl Phonons in Parity-Breaking FeSi, Phys. Rev. Lett. 121, 0353902 (2018). doi: 10.1103/PhysRevLett.121.035302

    work page doi:10.1103/physrevlett.121.035302 2018

  10. [10]

    Murakami, M

    Sh. Murakami, M. Hirayama, R. Okugawa, T. Miyake, Emergence of topological semimetals in gap closing in semiconductors without inversion symmetry, Sci. Adv. 3, e1602680 (2017). doi: 10.1126/sciadv.1602680

    work page doi:10.1126/sciadv.1602680 2017

  11. [11]

    Y. Fang, S. Ranc, W. Xied, S. Wange, Y.S. Menge, M.B. Maple, Evidence for a conducting surface ground state in high-quality single crystalline FeSi, PNAS 115, 8558 (2018). doi: 10.1073/pnas.1806910115

    work page doi:10.1073/pnas.1806910115 2018

  12. [12]

    Ohtsuka, N

    Y. Ohtsuka, N. Kanazawa, M. Hirayama, A. Matsui, T. Nomoto, R. Arita, T. Nakajima, T. Hanashima, V. Ukleev, H. Aoki, M. Mogi, K. Fujiwara, A. Tsukazaki, M. Ichikawa,M. Kawasaki, Y. Tokura, Emergence of spin-orbit coupled ferromagnetic surface state derived from Zak phase in a nonmagnetic insulator FeSi, Sci. Adv. 7, eabj0498 (2021). doi: 10.1126/sciadv.abj0498

    work page doi:10.1126/sciadv.abj0498 2021

  13. [13]

    T. Hori, N. Kanazawa, M. Hirayama, K. Fujiwara, A. Tsukazaki, M. Ichikawa, M. Kawasaki, Y. Tokura, A Noble-Metal-Free Spintronic System with Proximity- Enhanced Ferromagnetic Topological Surface State of FeSi above Room 13 Temperature, Adv. Mater. 35, 2206801 (2023). doi: 10.1002/adma.202206801

    work page doi:10.1002/adma.202206801 2023

  14. [14]

    Anomalous Hall effect,

    N. Nagaosa, J. Sinova, S.i Onoda, A.H. MacDonald, N.P. Ong, Anomalous Hall effect, Rev. Mod. Phys. 82, 1539 (2010). doi: 10.1103/RevModPhys.82.1539

    work page doi:10.1103/revmodphys.82.1539 2010

  15. [15]

    Neubauer, C

    A. Neubauer, C. Pfleiderer, B. Binz, A. Rosch, R. Ritz, P. G. Niklowitz, P. Böni, Topological Hall Effect in the 𝐴 Phase of MnSi, Phys. Rev. Lett. 102, 186602 (2009). doi: 10.1103/PhysRevLett.102.186602

    work page doi:10.1103/physrevlett.102.186602 2009

  16. [16]

    Yu. Li, N. Kanazawa, X.Z. Yu, A. Tsukazaki, M. Kawasaki, M. Ichikawa, X F. Jin, F. Kagawa, Y. Tokura, Robust Formation of Skyrmions and Topological Hall Effect Anomaly in Epitaxial Thin Films of MnSi, Phys. Rev. Lett. 110, 117202 (2013). doi: 10.1103/PhysRevLett.110.117202

    work page doi:10.1103/physrevlett.110.117202 2013

  17. [17]

    Glushkov, I

    V. Glushkov, I. Lobanova, V. Ivanov, V. Voronov, V. Dyadkin, N. Chubova, S. Grigoriev, S. Demishev, Scrutinizing Hall Effect in Mn1−𝑥Fe𝑥Si: Fermi Surface Evolution and Hidden Quantum Criticality, Phys. Rev. Lett. 115, 256601 (2015). doi: 10.1103/PhysRevLett.115.256601

    work page doi:10.1103/physrevlett.115.256601 2015

  18. [18]

    Zhong, J

    J. Zhong, J. Zhuang, Y. Du, Recent progress on the planar Hall effect in quantum materials, Chin. Phys. B 32, 047203 (2023). doi: 10.1088/1674-1056/acb91a

    work page doi:10.1088/1674-1056/acb91a 2023

  19. [19]

    Nandy, G

    S. Nandy, G. Sharma, A. Taraphder, S. Tewari, Chiral Anomaly as the Origin of the Planar Hall Effect in Weyl Semimetals, Phys. Rev. Lett. 119, 176804 (2017). doi: 10.1103/PhysRevLett.119.176804

    work page doi:10.1103/physrevlett.119.176804 2017

  20. [20]

    Liang, Y.J

    D.D. Liang, Y.J. Wang, W.L. Zhen, J. Yang, S.R. Weng, X. Yan, Y.Y. Han, W. Tong, W.K. Zhu, L. Pi C. J. Zhang, Origin of planar Hall effect in type-II Weyl semimetal MoTe2, AIP Advances 9, 055015 (2019). doi: 10.1063/1.5094231

    work page doi:10.1063/1.5094231 2019

  21. [21]

    Taskin, H.F

    A.A. Taskin, H.F. Legg, F. Yang, S. Sasaki, Y. Kanai, K. Matsumoto, A. Rosch, Y. Ando, Planar Hall effect from the surface of topological insulators., Nat. Commun. 8, 1340 (2017). doi: 10.1038/s41467-017-01474-8

    work page doi:10.1038/s41467-017-01474-8 2017

  22. [22]

    Changdar, S

    S. Changdar, S. Aswartham, A. Bose, Y. Kushnirenko, G. Shipunov, N. C. Plum, M. Shi, A. Narayan, B. Büchner, S. Thirupathaiah, Electronic structure studies of 14 FeSi: A chiral topological system, Phys. Rev. B 101, 235105 (2020). doi: 10.1103/PhysRevB.101.235105

    work page doi:10.1103/physrevb.101.235105 2020

  23. [23]

    Kübler, B

    J. Kübler, B. Yan, C. Felser, Non-vanishing Berry phase in chiral insulators, Europhys. Lett. 104, 30001 (2013). doi: 10.1209/0295-5075/104/30001

    work page doi:10.1209/0295-5075/104/30001 2013

  24. [24]

    von Goldbeck, Fe—Si Iron—Silicon

    O.K. von Goldbeck, Fe—Si Iron—Silicon. In: IRON—Binary Phase Diagrams. Springer, Berlin, Heidelberg, 1982, p.136-139

    work page 1982

  25. [25]

    Fanciulli, A

    M. Fanciulli, A. Zenkevich, I. Wenneker, A. Svane, N. E. Christensen, G. Weyer, Electric-field gradient at the Fe nucleus in -FeSi, Phys. Rev. B 54, 15985 (1996). doi: 10.1103/PhysRevB.54.15985

    work page doi:10.1103/physrevb.54.15985 1996

  26. [26]

    Fanciulli, A

    M. Fanciulli, A. Zenkevich, G. Weyer, Mössbauer investigation of silicide phases at the reactive Fe/Si interface, Appl. Surf. Science 123-124, 207 (1998). doi: 10.1016/S0169-4332(97)00451-0

    work page doi:10.1016/s0169-4332(97)00451-0 1998

  27. [27]

    Pashen, E

    S. Pashen, E. Felder, M. A. Chernikov, L. Degiorgi, H. Schwer, H. R. Ott, D.P. Young, J.L. Sarrao, Z. Fisk, Low-temperature transport, thermodynamic, and optical properties of FeSi, Phys. Rev. B 56, 12916 (1997). doi: 10.1103/PhysRevB.56.12916

    work page doi:10.1103/physrevb.56.12916 1997

  28. [28]

    Glushkov, I.B

    V. Glushkov, I.B. Voskoboinikov, S.V. Demishev, I.V. Krivitskii, A. Menovsky, V.V. Moshchalkov, N.A. Samarin, N.E. Sluchanko, Spin-polaron transport and magnetic phase diagram of iron monosilicide, JETP 99, 394 (2004). doi: 10.1134/1.1800197

    work page doi:10.1134/1.1800197 2004

  29. [29]

    Stepanov, S.M

    A.Petrova, S.Gavrilkin, S.Khasanov, V.A. Stepanov, S.M. Stishov, Magnetoresistance of a Bulk Sample of FeSi, JETP Lett. 120, 837 (2024) doi: 10.1134/S0021364024604135

    work page doi:10.1134/s0021364024604135 2024

  30. [30]

    Porter, G.L

    N.A. Porter, G.L. Creeth, C.H. Marrows, Magnetoresistance in polycrystalline and epitaxial Fe1−𝑥Co𝑥Si thin films, Phys. Rev. B 86, 064423 (2012). doi: 10.1103/PhysRevB.86.064423

    work page doi:10.1103/physrevb.86.064423 2012

  31. [31]

    Sinha, N.A

    P. Sinha, N.A. Porter, C.H. Marrows, Strain-induced effects on the magnetic and electronic properties of epitaxial Fe1−𝑥Co𝑥Si thin films, Phys. Rev. B 89, 134426 (2014)

    work page 2014

  32. [32]

    Bozhko, D

    A. Bozhko, D. Bortyakov, V. Brazhkin, V. Dubkov, V. Glushkov, Universal temperature corrections to the conductivity of niobium-carbon nanocomposites, Phys. B: Condens. Matt., 610, 412860 (2021). doi: 10.1016/J.PHYSB.2021.412860 15

    work page doi:10.1016/j.physb.2021.412860 2021

  33. [33]

    Glazman, K.A

    L.I. Glazman, K.A. Matveev, Inelastic tunneling across thin amorphous films, Sov.Phys. – JETP, 67, 1276 (1988)

    work page 1988

  34. [34]

    B.Q. Lv, T. Qian, H. Ding, Experimental perspective on three-dimensional topological semimetals, Rev. Mod. Phys. 93, 025002 (2021). doi: 10.1103/RevModPhys.93.025002

    work page doi:10.1103/revmodphys.93.025002 2021

  35. [35]

    Glushkov, I

    V. Glushkov, I. Lobanova, V. Ivanov, S. Demishev, Anomalous Hall effect in MnSi: intrinsic to extrinsic crossover, JETP Letters 7, 459 (2015). doi: 10.7868/S0370274X15070085 16 Figure 1. (a) TEM images of the PLD grown -57FeSi thin films. (b) CEMS spectrum of polycrystalline -57FeSi thin film. (c) Experimental scheme of the fabricated sample used to mea...

    work page doi:10.7868/s0370274x15070085 2015

  36. [36]

    Experimental Signatures of Topological Transport in Polycrystalline FeSi Thin Films

    Blue solid line is the best fit for xy PHE~xx  with exponent =8/3. The scales of left and right y axes are identical. (b) The xy AHE, xy LHEand xy PHE data recalculated in terms of conductivity xy AHE, xy LHEand xy PHE (in Siemens per square) as a function of xx. Horizontal grey dashed lines mark behaviour corresponded to intrinsic anomalous Ha...

    work page 1982