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Electron and Hole Injection via Charge Transfer at the Topological-Insulator Bi_(2-x)Sb_xTe_(3-y)Se_y/Organic-Molecule Interface

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arxiv 1402.5223 v1 pith:R43ONH4V submitted 2014-02-21 cond-mat.mtrl-sci cond-mat.mes-hallphysics.chem-ph

Electron and Hole Injection via Charge Transfer at the Topological-Insulator Bi_(2-x)Sb_xTe_(3-y)Se_y/Organic-Molecule Interface

classification cond-mat.mtrl-sci cond-mat.mes-hallphysics.chem-ph
keywords carrierelectrontuningchargeconversioninterfacemethodmolecules
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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As a methodology for controlling the carrier transport of topological insulators (TI's), a flexible tuning in carrier number on the surface states (SS's) of three dimensional TI's by surface modifications using organic molecules is described. The principle of the carrier tuning and its type conversion of TI's presented in this research are based on the charge transfer of holes or electrons at the TI/organic molecule interface. By employing 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ) as an electron acceptor or tetracyanoquinodimethane (TCNQ) as a donor for n- and p- Bi2-xSbxTe3-ySey (BSTS) single crystals, successful carrier conversion from n to p and its reverse mode is demonstrated depending on the electron affinities of the molecules. The present method provides a nondestructive and efficient method for local tuning in carrier density of TI's, and is useful for future applications.

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