Mechanical Decoupling of Quantum Emitters in Hexagonal Boron Nitride from Low-Energy Phonon Modes

Quantum emitters in hexagonal Boron Nitride (hBN) were recently reported to hol a homogeneous linewidth according to the Fourier-Transform limit up to room temperature. This unusual observation was traced back to decoupling from in-plane phonon modes which can arise if the emitter is located between two planes of the hBN host material. In this work, we investigate the origins for the mechanical decoupling. Improved sample preparation enabled a reduced background and a 70-fold decrease of spectral diffusion which was so far the major drawback of defect center in hBN and allowed us to reveal a gap in the electron-phonon spectral density for low phonon frequencies. This decoupling from phonons persists at room temperature and explains the observed Fourier Transform limited lines up to 300K. Furthermore, we investigate the dipole emission directionality and show a preferred photon emission through the side of the hBN flakes supporting the claim for an out-of-plane distortion of the defect center. Our work lays the foundation to a deeper understanding of the underlying physics for the persistence of Fourier-Transform limit lines up to room temperature. It furthermore provides a description on how to identify the mechanically isolated emitter within the large number of defect centers in hBN. Therefore, it paves the way for quantum optics applications with defect centers in hBN at room temperature.