Pith. sign in

REVIEW 5 cited by

Three-Dimensional Real Space Invariants, Obstructed Atomic Insulators and A New Principle for Active Catalytic Sites

Not yet reviewed by Pith; the record is open.

This paper has not been read by Pith yet. Machine review is queued; the pith claim, tier, and objections will appear here once it completes.

SPECIMEN: schema-true, not a live event

T0 review · schema-true

One-sentence machine reading of the paper's core claim.

pith:XXXXXXXX · record.json · timestamp

arxiv 2111.02433 v1 pith:2KTUMZTZ submitted 2021-11-03 cond-mat.mtrl-sci cond-mat.mes-hallcond-mat.supr-con

Three-Dimensional Real Space Invariants, Obstructed Atomic Insulators and A New Principle for Active Catalytic Sites

classification cond-mat.mtrl-sci cond-mat.mes-hallcond-mat.supr-con
keywords oaisatomicinsulatorsobstructedcatalyticmagneticmaterialsrsis
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
0 comments
Share X Bluesky LinkedIn Reddit HN
read the original abstract

Topologically trivial insulators come in two kinds: atomic, where the Wannier charge centers (WCCs) are localized on the atoms, and obstructed atomic, where the WCCs are located away from the atoms. The latter, which can exhibit interesting surface states and possibly have much larger band gaps than the topological insulators, have so far not been classified in three-dimensional (3D) crystalline materials. In this paper, we developed the 3D real space invariants (RSIs) for the 1651 Shubnikov space groups with the spin-orbit coupling and provide the full classification of 3D obstructed atomic insulators (OAIs) by the RSIs. We then apply the theory to the entire database of materials on the Topological Quantum Chemistry website and Topological Magnetic Materials website, obtaining all the OAIs so far existing in nature. We find that, out of the 34013 paramagnetic and 296 magnetic topologically trivial insulators, there are 3383 paramagnetic and 30 magnetic OAIs. All of them present a filling anomaly under certain open-boundary conditions and exhibit obstructed surface states (OSSs). We further refine the atomic insulator concept to obtain the orbital-selected OAIs (OOAIs), where the WCC of the system is located at a Wyckoff position occupied by an atom but forms a symmetric representation that does not belong to the outer-shell electrons of the given atom. In such a way, we obtain a further 121 OOAIs. Furthermore, we analyze the catalytic properties of one of the OAIs in a "proof of principle" experiment. By using the single crystal of 2H-MoS2 as a hydrogen evolution catalyst, we directly prove that the catalytic activities arise from the surfaces with OSSs. Additional potential applications of the 3D RSIs and OAIs in, for example, electrochemistry, asymmetric catalysis, superconductivity, and Josephson diode will be discussed.

discussion (0)

Sign in with ORCID, Apple, or X to comment. Anyone can read and Pith papers without signing in.

Forward citations

Cited by 5 Pith papers

Reviewed papers in the Pith corpus that reference this work. Sorted by Pith novelty score.

  1. Catalogue of topological phonon materials

    cond-mat.mtrl-sci 2022-11 unverdicted novelty 7.0

    High-throughput symmetry analysis of phonons in >10k materials identifies >1k ideal topological candidates and releases a public database.

  2. Quantum geometry and critical temperature enhancement in MgB$_2$ superconductivity

    cond-mat.supr-con 2026-07 conditional novelty 6.0

    Light electron doping of MgB2 is predicted to raise Tc in the clean limit, with the enhancement traced to the quantum-geometric component of the electron-phonon coupling that peaks near the Γ-point band edge.

  3. Fragile Topology is Unstable Under Translation Refinement

    cond-mat.mes-hall 2026-07 conditional novelty 6.0

    Every symmetry-indicated fragile phase in any 2D wallpaper group is adiabatically connected to an atomic insulator in some finite symmetry-compatible supercell, with the minimal supercell index tabulated for every sym...

  4. Topological Dislocation Response in Elementary Semiconductors

    cond-mat.mes-hall 2026-02 conditional novelty 6.0

    Edge dislocations in silicon, diamond, germanium, and black phosphorene are predicted to bind mid-gap polarization bands protected by a filling anomaly, while screw dislocations are trivial.

  5. Real-Space Imaging of Band Topology via Wavefunction Zeros

    cond-mat.mes-hall 2026-07 conditional novelty 5.0

    Symmetry forces Bloch wavefunctions to vanish at a pattern of real-space points (the 'dark set') that encodes the band's irreducible representation and, through known indicators, its topological index.