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Type-II quantum spin Hall insulator

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arxiv 2503.13397 v2 pith:3JEO4DS2 submitted 2025-03-17 cond-mat.mes-hall cond-mat.mtrl-sci

classification cond-mat.mes-hallcond-mat.mtrl-sci
keywords hallspinquantuminsulatorsymmetrytype-iieffectmaterials
verification ladder T0 review T1 audit T2 compute T3 formal
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abstract

Quantum spin Hall effect is usually realized in two-dimensional materials with time-reversal symmetry, but whether it can be realized without symmetry protection remains unexplored. Here, we propose type-II quantum spin Hall insulator with quantized spin Hall conductivity, whose edge states with opposite chirality and polarization, distributed in different Brillouin zone regions, connect the conduction and valence bands at the boundary. Thus, the type-II quantum spin Hall insulator does not require any symmetry protection other than translational symmetry. Then, based on symmetry analysis and the first-principles electronic structure calculations, we demonstrate that type-II quantum spin Hall insulator can be realized in both altermagnetic materials and Luttinger compensated magnetic materials. Furthermore, based on lattice model, we find that as long as $U(1)$ symmetry exists, type-II quantum spin Hall insulator phase can always exist stably. However, if $U(1)$ symmetry is broken, type-II quantum spin Hall insulator phase transforms into an obstructed atomic insulator phase as spin-orbit coupling effect is enhanced. Therefore, our work not only proposes a new mechanism for realizing the quantum spin Hall effect, but also enriches the types of unconventional magnetic topological phases.

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Forward citations

Cited by 7 Pith papers

Reviewed papers in the Pith corpus that reference this work. Sorted by Pith novelty score. Full citation record

  1. Stacking-induced type-II quantum spin Hall insulators with high spin Chern number in unconventional magnetism

    cond-mat.mes-hall 2025-08 conditional novelty 7.0 of 10

    Stacking two type-II quantum spin Hall insulators yields a nontrivial quantum spin Hall insulator with spin Chern number 2 and doubled spin Hall conductance.

  2. Anomalous charge density wave in altermagnetism

    cond-mat.mtrl-sci 2025-07 conditional novelty 7.0 of 10

    Monolayer altermagnetic WO is predicted to host a sqrt(2) x sqrt(2) charge density wave that raises the density of states at the Fermi level, an anomalous CDW.

  3. Emergent d-wave altermagnetism in chlorine-adsorbed FeSe monolayer

    cond-mat.mtrl-sci 2026-07 conditional novelty 6.0 of 10

    Hole-doped, single-side Cl-adsorbed monolayer FeSe is predicted to host a robust d-wave altermagnetic state with up to 620 meV spin splitting.

  4. Surface Functionalization Enables Two-Dimensional Altermagnetism and Giant Tunnel Magnetoresistance

    cond-mat.mtrl-sci 2026-07 conditional novelty 6.0 of 10

    Surface functionalization converts AFM monolayer FeSe into a d-wave altermagnet whose tunnel junctions show simulated TMR up to 1.87×10³% via momentum-selective spin filtering.

  5. Ultrafast optical route to coupled ferroelectric and altermagnetic switching

    cond-mat.mtrl-sci 2026-03 conditional novelty 6.0 of 10

    LiV2F6 is predicted to host charge-order-induced altermagnetism and ferroelectricity that reverse together under ultrafast laser-driven charge transfer in about 15 fs.

  6. Linearly Polarized Light-Induced Anomalous Hall Effect and Topological Phase Transitions in an Altermagnetic Topological Insulator

    cond-mat.mes-hall 2026-03 conditional novelty 6.0 of 10

    Floquet driving by linearly polarized light breaks C4zT in d-wave altermagnets, inducing anisotropic AHE and a spin-polarized Chern insulator, while PT-symmetric AFMs remain inert.

  7. G-type Antiferromagnetic BiFeO$_3$ is a Multiferroic $g$-wave Altermagnet

    cond-mat.mtrl-sci 2025-05 conditional novelty 6.0 of 10

    G-type antiferromagnetic BiFeO3 is classified as a bulk g-wave altermagnet with spin splitting up to about 0.2 eV, using a completed group-theory table for (d,g,i)-wave altermagnets.

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